Abstract: An electrically programmable, erasable, read-only memory is comprised of an array of vertical porous floating gate MOSFET structures in a layer of a-Si with parallel X and parallel Y conductors on opposite sides of the a-Si layer functioning as source and drain electrodes. The floating gate of each vertical MOSFET structure consists of a plurality of electrically insulated metallic particles embedded in the a-Si layer between said source and said drain electrodes with the metallic particles adjacent to the source electrodes. The insulation between the metallic particles and the a-Si material is thick enough to prevent tunneling of electrons but the insulation between the particles and the source electrode is thinner to allow tunneling of electrons at a predetermined threshold voltage to store a charge in the porous floating gate. Alternatively, the metal particles may be gathered into one insulated toroidal gate which controls current through a-Si in the center of the toroidal gate.

Abstract: MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an "OFF/ON" resistance ratio of at least about 10.sup.3 and the tailorability of "ON" state (20) resistance. Such films are potentially extremely useful as a "connection" element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or "disconnected" as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.

Abstract: A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix.

Abstract: Random access memory is used to store synaptic information in the form of a matrix of rows and columns of binary digits. N rows read in sequence are processed through switches and resistors, and a summing amplifier to N neural amplifiers in sequence, one row for each amplifier, using a first array of sample-and-hold devices S/H1 for commutation. The outputs of the neural amplifiers are stored in a second array of sample-and-hold devices S/H2 so that after N rows are processed, all of said second array of sample-and-hold devices are updated. A second memory may be added for binary values of 0 and -1, and processed simultaneously with the first to provide for values of 1, 0, and -1, the results of which are combined in a difference amplifier.

Abstract: A field emitter device utilizing a gate electrode adjacent a carbon fiber electron emitter cathode for controlling the initial flow of electrons between the cathode and a collector element. Subsequent disconnect of the gate electrode from its power source does not affect the electron flow and thereby provides a bistable memory type device. Luminescent material on the collector provides a light emission display at points corresponding to electron flow between the emitter and the collector.

Abstract: A thin film electroluminescent device constructed on a smooth surface substrate on which a base conductive layer is formed, followed in sequence by an impurity doped barrier layer, an electrically resistive layer and a counterelectrode layer. The impurity doped barrier layer is doped with a material which exhibits electroluminescence.The impurity doped barrier layer is produced in a controlled oxidation process of the base conductive layer which is alloyed to a minor extent with the impurity material.

Abstract: A reflective type light modulator utilizing the principal of ion injection from a switching electrode into a fluid dielectric to effect turbulent forces and the resultant movement of a light reflecting object into and out of a light path. The fluid dielectric and the movable object have similar values of specific gravity.

Abstract: A light modulator utilizing the principal of ion injection from a switching electrode into a fluid dielectric to effect turbulent forces and the resultant movement of a light interrupting object into and out of a light path. The fluid dielectric and the movable object have similar values of specific gravity.

Abstract: A solid state source of radiant energy having a characteristic frequency spectra with a high frequency cutoff .nu..sub.co, which is a function of the applied voltage value. The source is a metal-insulator-metal tunnel junction wherein the insulator layer is relatively thin with respect to the metal layers and inelastic tunneling occurs. To facilitate output coupling to surface plasmon modes in the junction, the counter-electrode metal layer, from which the radiant energy is emitted, is roughened. One of the uses for the solid state source is as a light source of a spectrophotometer where the transmittance or reflectance band characteristics of a sample are determined by converting the photodetector current to its second derivative and correlating the second derivative with the applied voltage which is modulated over a predetermined range of amplitude values.

Abstract: A solid state source of radiant energy having a characteristic frequency spectra with a high frequency cutoff .nu..sub.co, which is a function of the applied voltage value. The source is a metal-insulator-metal tunnel junction wherein the insulator layer is relatively thin with respect to the metal layers and inelastic tunneling occurs. To facilitate output coupling to surface plasmon modes in the junction, the counter-electrode metal layer, from which the radiant energy is emitted, is roughened.