Abstract: An apparatus includes at least one conductive layer, an electromagnetic (EM) wave source, and an electron source. The conductive layer has a thickness less than 5 nm. The electromagnetic (EM) wave source is in electromagnetic communication with the at least one conductive layer and transmits a first EM wave at a first wavelength in the at least one conductive layer so as to generate a surface plasmon polariton (SPP) field near a surface of the at least one conductive layer. The electron source propagates an electron beam at least partially in the SPP field so as to generate a second EM wave at a second wavelength less than the first wavelength.

Abstract: Ultra-thin conductors are employed to generate plasmon fields near the surface of the conductors. Emitters, such as atoms, molecules, quantum dots, or quantum wells, in the plasmon fields can emit and absorb light via transitions that are otherwise forbidden in the absence of the plasmon fields. Applications using these forbidden transitions include spectroscopy, organic light sources, and broadband light generation. For example, in a spectroscopic platform, an emitter is disposed in the plasmon fields to excite electronic transitions that are otherwise unexcitable. In organic light sources, plasmon fields quench excited triplet states, allowing fast singlet decay with the emission of light. In broadband light generation, strong two-plasmon spontaneous emission of emitters near ultrathin conductors is employed to produce a broad spectrum of light.

Abstract: Ultra-thin conductors are employed to generate plasmon fields near the surface of the conductors. Emitters, such as atoms, molecules, quantum dots, or quantum wells, in the plasmon fields can emit and absorb light via transitions that are otherwise forbidden in the absence of the plasmon fields. Applications using these forbidden transitions include spectroscopy, organic light sources, and broadband light generation. For example, in a spectroscopic platform, an emitter is disposed in the plasmon fields to excite electronic transitions that are otherwise unexcitable. In organic light sources, plasmon fields quench excited triplet states, allowing fast singlet decay with the emission of light. In broadband light generation, strong two-plasmon spontaneous emission of emitters near ultrathin conductors is employed to produce a broad spectrum of light.

Abstract: An apparatus includes at least one conductive layer, an electromagnetic (EM) wave source, and an electron source. The conductive layer has a thickness less than 5 nm. The electromagnetic (EM) wave source is in electromagnetic communication with the at least one conductive layer and transmits a first EM wave at a first wavelength in the at least one conductive layer so as to generate a surface plasmon polariton (SPP) field near a surface of the at least one conductive layer. The electron source propagates an electron beam at least partially in the SPP field so as to generate a second EM wave at a second wavelength less than the first wavelength.

Abstract: Disclosed herein is a system for stimulating emission from at least one an emitter, such as a quantum dot or organic molecule, on the surface of a photonic crystal comprising a patterned dielectric substrate. Embodiments of this system include a laser or other source that illuminates the emitter and the photonic crystal, which is characterized by an energy band structure exhibiting a Fano resonance, from a first angle so as to stimulate the emission from the emitter at a second angle. The coupling between the photonic crystal and the emitter may result in spectral and angular enhancement of the emission through excitation and extraction enhancement. These enhancement mechanisms also reduce the emitter's lasing threshold. For instance, these enhancement mechanisms enable lasing of a 100 nm thick layer of diluted organic molecules solution with reduced threshold intensity. This reduction in lasing threshold enables more efficient organic light emitting devices and more sensitive molecular sensing.

Abstract: There is provided a structure for supporting propagation of surface plasmon polaritons. The structure includes a plasmonic material region and a dielectric material region, disposed adjacent to a selected surface of the plasmonic material region. At least one of the plasmonic material region and the dielectric material region have a dielectric permittivity distribution that is specified as a function of depth through the corresponding material region. This dielectric permittivity distribution is selected to impose prespecified group velocities, vgj, on a dispersion relation for a surface polaritonic mode of the structure for at least one of a corresponding set of prespecified frequencies, ?j, and corresponding set of prespecified wavevectors, where j=1 to N.

Abstract: An optical device is provided having a solid state nonlinear material with a nanostructured extent, in at least one dimension, that is less than about 10 nm or that is at a temperature of less than about 77 K. An electronic band gap, EGap, of the material is at least about twice as large as an energy of a photon with a wavelength, ?, equal to an operational wavelength of the device. The material is characterized by a switching figure of merit, ?, having a value that is at least about 2?. A dielectric structure is around at least one dimension of the nonlinear material in a geometric arrangement having a characteristic photonic band gap that at least partially overlaps the electronic band gap of the material. At least one waveguide is disposed at the dielectric structure in sufficient proximity with the material for coupling light to the material.

Abstract: An optical device is provided having a solid state nonlinear material with a nanostructured extent, in at least one dimension, that is less than about 10 nm or that is at a temperature of less than about 77 K. An electronic band gap, EGap, of the material is at least about twice as large as an energy of a photon with a wavelength, ?, equal to an operational wavelength of the device. The material is characterized by a switching figure of merit, ?, having a value that is at least about 2?. A dielectric structure is around at least one dimension of the nonlinear material in a geometric arrangement having a characteristic photonic band gap that at least partially overlaps the electronic band gap of the material. At least one waveguide is disposed at the dielectric structure in sufficient proximity with the material for coupling light to the material.

Abstract: There is provided a structure for supporting propagation of surface plasmon polaritons. The structure includes a plasmonic material region and a dielectric material region, disposed adjacent to a selected surface of the plasmonic material region. At least one of the plasmonic material region and the dielectric material region have a dielectric permittivity distribution that is specified as a function of depth through the corresponding material region. This dielectric permittivity distribution is selected to impose prespecified group velocities, vgj, on a dispersion relation for a surface polaritonic mode of the structure for at least one of a corresponding set of prespecified frequencies, ?j, and corresponding set of prespecified wavevectors, kj, where j=1 to N.

Abstract: The invention provides techniques for drawing fibers that include conducting, semiconducting, and insulating materials in intimate contact and prescribed geometries. The resulting fiber exhibits engineered electrical and optical functionalities along extended fiber lengths. The invention provides corresponding processes for producing such fibers, including assembling a fiber preform of a plurality of distinct materials, e.g., of conducting, semiconducting, and insulating materials, and drawing the preform into a fiber.

Abstract: A system and a method for generating terahertz (THz) radiation are provided. The system includes a photonic crystal structure comprising at least one nonlinear material that enables optical rectification. The photonic crystal structure is configured to have the suitable transverse dispersion relations and enhanced density photonic states so as to allow THz radiation to be emitted efficiently when an optical or near infrared pulse travels through the nonlinear part of the photonic crystal.

Abstract: A solar cell includes a photovoltaic material region. The photovoltaic material region is covered by a uniform anti-reflection coating. A photonic crystal structure is positioned on the photovoltaic material region. The photonic crystal structure provides a medium to produce a plurality of spatial orientations of an incident light signal received by the solar cell so as to allow trapping of a selective frequency of incident light in the solar cell.

Abstract: The electromagnetic energy transfer device includes a first resonator structure receiving energy from an external power supply. The first resonator structure has a first Q-factor. A second resonator structure is positioned distal from the first resonator structure, and supplies useful working power to an external load. The second resonator structure has a second Q-factor. The distance between the two resonators can be larger than the characteristic size of each resonator. Non-radiative energy transfer between the first resonator structure and the second resonator structure is mediated through coupling of their resonant-field evanescent tails.

Abstract: In general, in one aspect, the invention features an article including a high-power, low-loss fiber waveguide that includes alternating layers of different dielectric materials surrounding a core extending along a waveguide axis, the different dielectric materials including a polymer and a glass.

Abstract: A bistable photonic crystal configuration comprises a waveguide sided coupled to a single-mode cavity. This configuration can generate extremely high contrast between the bistable states in its transmission with low input power. All-optical switching action is also achieved in a nonlinear photonic crystal cross-waveguide geometry, in which the transmission of a signal can be reversibly switched on and off by a control input, or irreversibly switched, depending on the input power level.

Abstract: A new class of surface plasmon waveguides is presented. The basis of these structures is the presence of surface plasmon modes, supported on the interfaces between the dielectric regions and the flat unpatterned surface of a bulk metallic substrate. The waveguides discussed here are promising to have significant applications in the field of nanophotonics by being able to simultaneously shrink length, time and energy scales, allowing for easy coupling over their entire bandwidth of operation, and exhibiting minimal absorption losses limited only by the intrinsic loss of the metallic substrate. These principles can be used for many frequency regimes (from GHz and lower, all the way to optical).

Abstract: An optical modulator includes a crystal structure that exhibits polaritonic or excitonic behavior. A shock wave propagates through the crystal structure so as to optically modulate and manipulate a light signal propagating in the crystal structure.

Abstract: A nano-electromechanical optical switch includes an input optical waveguide that is provided with an optical signal. At least two output optical waveguides are coupled to the input optical waveguide. The deflection of the input optical waveguide aligns with one of either of the two output optical waveguides so as to allow transmission of the optical signal to one of either of the two output optical waveguides.

Abstract: A device for bending a laser beam is provided. The device includes a beam deflection device that produces the beam having a selected number of addressable points. A soliton forming mechanism is positioned at the output of the beam deflection device so it receives the beam and increases the number of addressable points by a certain magnitude.

Abstract: The invention provides techniques for drawing fibers that include conducting, semiconducting, and insulating materials in intimate contact and prescribed geometries. The resulting fiber exhibits engineered electrical and optical functionalities along extended fiber lengths. The invention provides corresponding processes for producing such fibers, including assembling a fiber preform of a plurality of distinct materials, e.g., of conducting, semiconducting, and insulating materials, and drawing the preform into a fiber.