Patents by Inventor John L. Peel

John L. Peel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reduction of field oxide encroachment in MOS fabrication
    Patent number: 4577394
    Abstract: Reduction of the encroachment of a grown field oxide layer during MOS device fabrication by covering a masking anti-oxidant layer that defines the active element area of a semiconductor substrate with a layer of passivation material which extends over the edge of the anti-oxidant layer to contact the pad oxide over the semiconductor substrate surface.
    Type: Grant
    Filed: October 1, 1984
    Date of Patent: March 25, 1986
    Assignee: National Semiconductor Corporation
    Inventor: John L. Peel
  • SOS island edge passivation structure
    Patent number: 4368085
    Abstract: A silicon-on-sapphire semiconductor structure, and method of fabricating such structure, in which a silicone nitride layer is provided over the oxide layer. The silicon nitride layer is disposed over the upper edge of the silicon island, and acts to prevent gate oxide breakdown.
    Type: Grant
    Filed: July 8, 1980
    Date of Patent: January 11, 1983
    Assignee: Rockwell International Corporation
    Inventor: John L. Peel
  • Improvements in methods of sterilization
    Patent number: 4289728
    Abstract: A method of sterilization which comprises treating a microorganism with an ultraviolet irradiated solution of hydrogen peroxide, the wavelength of the ultraviolet radiation being wholly or predominantly below 325 nm and the concentration of the hydrogen peroxide being no greater than 10% by weight and such that the microorganism is rendered non-viable by synergism between the radiation and the hydrogen peroxide. The invention is particularly applicable to the treatment of spores contaminating food packaging.
    Type: Grant
    Filed: January 3, 1980
    Date of Patent: September 15, 1981
    Assignee: National Research Development Corp.
    Inventors: John L. Peel, William M. Waites
  • Method of fabricating an SOS island edge passivation structure
    Patent number: 4242156
    Abstract: A silicon-on-sapphire semiconductor structure, and method of fabricating such structure, in which a silicon nitride layer is provided over the oxide layer. The silicon nitride layer is disposed over the upper edge of the silicon island, and acts to prevent gate oxide breakdown.
    Type: Grant
    Filed: October 15, 1979
    Date of Patent: December 30, 1980
    Assignee: Rockwell International Corporation
    Inventor: John L. Peel