Abstract: The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack. The FBAR stack comprises an FBAR and a temperature-compensating element. The FBAR is characterized by a resonant frequency having a temperature coefficient, and comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency depends at least in part. The temperature-compensating element has a temperature coefficient opposite in sign to the temperature coefficient of the piezoelectric element.

Abstract: The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.

Abstract: A Schottky barrier integrated circuit is disclosed, the circuit having at least one PMOS device or at least one NMOS device, at least one of the PMOS device or NMOS device having metal source-drain contacts forming Schottky barrier or Schottky-like contacts to the semiconductor substrate. The device provides a new distribution of mobile charge carriers in the bulk region of the semiconductor substrate, which improves device and circuit performance by lowering gate capacitance, improving effective carrier mobility {overscore (?)}, reducing noise, reducing gate insulator leakage, reducing hot carrier effect and improving reliability.

Abstract: The film bulk acoustic resonator (FBAR) device comprises a substrate, an acoustic Bragg reflector over the substrate, a piezoelectric element over the acoustic Bragg reflector, and a remote-side electrode over the piezoelectric element. The acoustic Bragg reflector comprises a metal Bragg layer juxtaposed with a plastic Bragg layer. The large ratio between the acoustic impedances of the plastic material of the plastic Bragg layer and the metal of the metal Bragg layer provides sufficient acoustic isolation between the FBAR and the substrate for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the substrate.

Abstract: An embodiment of the acoustically-coupled transformer has first and second stacked bulk acoustic resonators (SBARs) each having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes with piezoelectric material between the electrodes. A first electrical circuit connects one FBARs of the first SBAR to one FBAR of the second SBAR, and a second electrical circuit connects the other FBAR of the first SBAR to the other FBAR of the second SBAR. The c-axis of the piezoelectric material of one of the FBARs is opposite in direction to the c-axes of the piezoelectric materials of the other three FBARs. This arrangement substantially reduces the amplitude of signal-frequency voltages across the acoustic decouplers and significantly improves the common mode rejection of the transformer. This arrangement also allows conductive acoustic decouplers to be used, increasing the available choice of acoustic decoupler materials.

Abstract: The band-pass filter has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

Abstract: The film acoustically-coupled transformer (FACT) has a first and second decoupled stacked bulk acoustic resonators (DSBARs). Each DSBAR has a lower film bulk acoustic resonator (FBAR), an upper FBAR atop the lower FBAR, and an acoustic decoupler between them FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. A first electrical circuit interconnects the lowers FBAR of the first DSBAR and the second DSBAR. A second electrical circuit interconnects the upper FBARs of the first DSBAR and the second DSBAR. In at least one of the DSBARs, the acoustic decoupler and one electrode of the each of the lower FBAR and the upper FBAR adjacent the acoustic decoupler constitute a parasitic capacitor. The FACT additionally has an inductor electrically connected in parallel with the parasitic capacitor. The inductor increases the common-mode rejection ratio of the FACT.

Abstract: The decoupled stacked bulk acoustic resonator (DSBAR) device has a lower film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler has acoustic decoupling layers of acoustic decoupling materials having different acoustic impedances. The acoustic impedances and thicknesses of the acoustic decoupling layers determine the acoustic impedance of the acoustic decoupler, and, hence, the pass bandwidth of the DSBAR device. Process-compatible acoustic decoupling materials can then be used to make acoustic decouplers with acoustic impedances (and pass bandwidths) that are not otherwise obtainable due to the lack of process-compatible acoustic decoupling materials with such acoustic impedances.

Abstract: Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.

Abstract: The band-pass filter has an upper film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each of the FBARs has opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

Abstract: One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary.

Abstract: One embodiment of the acoustically-coupled transformer includes a stacked bulk acoustic resonator (SBAR) having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between them. Each FBAR has opposed planar electrodes with piezoelectric material between them. The transformer additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment includes first and second stacked bulk acoustic resonators (SBARs), each as described above, a first electrical circuit connecting one FBARs of the first SBAR to one FBAR of the second SBAR, and a second electrical circuit connecting the other FBAR of the first SBAR to the other FBAR of the second SBAR. The transformer provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary.

Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

Abstract: A computer system includes a plurality of memory modules that contain semiconductor memory, such as DIMMs. The system includes a host/data controller that utilizes an XOR engine to store data and parity information in a striped fashion on the plurality of memory modules to create a redundant array of industry standard DIMMs (RAID). The host/data controller also interleaves data on a plurality of channels associated with each of the plurality of memory modules.

Abstract: The present invention is a field effect transistor having a strained semiconductor substrate and Schottky-barrier source and drain electrodes, and a method for making the transistor. The bulk charge carrier transport characteristic of the Schottky barrier field effect transistor minimizes carrier surface scattering, which enables the strained substrate to provide improved power and speed performance characteristics in this device, as compared to conventional devices.

Abstract: A technique for identifying the location of electrical components, such as memory cartridges which have been disposed on a substrate. More specifically, a connector configured to be coupled to a first substrate and configured to receive a second substrate, wherein the connector includes an identification device uniquely configured to provide location information and to electrically couple a plurality of location identification signals to the second substrate, the electrical signals being received from traces on the first substrate.

Abstract: An improved ventilation strip for providing a soffit vent on a building. The ventilation strip includes an elongated perforated panel having a substantially planar upper surface and flanges extending laterally there from. A lip is provided on the lower surface of the panel at each edge of the panel running longitudinally thereon. The flanges are of non-uniform cross section and include an upper and a lower surface. The flanges are thickest at the juncture with the panel and thinnest at their outer ends with the lower surface tapering upward from the juncture to the end. Apertures may be provided in the flanges. The ventilation strip is operated by cutting a channel in the soffit of a structure, aligning the strip with the channel, and driving fasteners through the flanges to secure the strip to the soffit. Stucco reinforcement mesh may be secured across the flanges and the soffit and stucco spread thereon to complete the installation.

Abstract: A soffit vent comprising a base having opposing elongated edges, a pair of parallel flanges extending upwardly from the base intermediate the elongated edges and defining: 1) a vent zone in the base characterized by the presence of vent holes in the base; and 2) attachment flanges formed by portions of the base extending beyond the location of the parallel upwardly extending flanges, the attachment flanges including holes therein for the insertion of attachment devices. A method for installing the soffit vent of the present invention in an EIFS or DEFS structure comprising locating the soffit vent in the appropriate location between a pair of insulating members in the EIFS or DEFS structure, attaching the soffit vent to the structure by the insertion of a suitable fastener through the apertures in the attachment flanges and into the foam insulation.

Abstract: An improved curtain wall casing bead for installation on buildings having stucco or similar curtain wall exteriors. The improved curtain wall casing bead incorporates a mesh attached to at least the front wall of the casing or starter bead, which mesh extends beyond the height of the front wall and provides additional area for the infiltration of over-applied stucco finishes or the like. Such additional infiltration, after drying of the over-applied layer provides a more adherent, higher quality and more durable attachment of the stucco finish to the casing bead and the overall wall structure is achieved.

Abstract: A technique for identifying multiple circuit components. More specifically, a technique for identifying the location of electrical components, such as memory cartridges which have been disposed on a substrate, is described. The technique utilizes unique identifiers that correspond to locations on a substrate. Furthermore, each connector may have a unique identification device that receives the unique identifier.