Abstract: A technique relates to a superconducting airbridge on a structure. A first ground plane, resonator, and second ground plane are formed on a substrate. A first lift-off pattern is formed of a first lift-off resist and a first photoresist. The first photoresist is deposited on the first lift-off resist. A superconducting sacrificial layer is deposited while using the first lift-off pattern. The first lift-off pattern is removed. A cross-over lift-off pattern is formed of a second lift-off resist and a second photoresist. The second photoresist is deposited on the second lift-off resist. A cross-over superconducting material is deposited to be formed as the superconducting airbridge while using the cross-over lift-off pattern. The cross-over lift-off pattern is removed. The superconducting airbridge is formed to connect the first and second ground planes by removing the superconducting sacrificial layer underneath the cross-over superconducting material. The superconducting airbridge crosses over the resonator.

Abstract: A MEMS device comprises an electro mechanical element in a sealed chamber containing a gas comprising a reactive gas selected to react with any contaminants that may be present or formed on the operating surfaces of the device in a manner to maximize the electrical conductivity of the surfaces during operation of the device. The MEMS device may comprise a MEMS switch having electrical contacts as the operating surfaces. The reactive gas may comprise hydrogen or an azane, optionally mixed with an inert gas, or any combination of the gases. The corresponding process provides a means to substantially reduce or eliminate contaminants present or formed on the operating surfaces of MEMS devices in a manner to maximize the electrical conductivity of the surfaces during operation of the devices.

Abstract: A semiconductor structure and methods of forming the semiconductor structure generally includes providing a thermocompression bonded superconducting metal layer sandwiched between a first silicon substrate and a second silicon substrate. The second substrate includes a plurality of through silicon vias to the thermocompression bonded superconducting metal layer. A second superconducting metal is electroplated into the through silicon vias using the thermocompression bonded superconducting metal layer as a bottom electrode during the electroplating process, wherein the filling is from the bottom upwards.

Abstract: A semiconductor structure and methods of forming the semiconductor structure generally includes providing a thermocompression bonded superconducting metal layer sandwiched between a first silicon substrate and a second silicon substrate. The second substrate includes a plurality of through silicon vias to the thermocompression bonded superconducting metal layer. A second superconducting metal is electroplated into the through silicon vias using the thermocompression bonded superconducting metal layer as a bottom electrode during the electroplating process, wherein the filling is from the bottom upwards.

Abstract: A device has a first stack of thin films, the first stack of thin films having a first opposing surface and a first connection surface, wherein the first connection surface contacts a first superconducting region; a second stack of thin films, the second stack of thin films having a second opposing surface and a second connection surface, wherein the second connection surface contacts a second superconducting region; and a superconducting bump bond electrically connecting the first and second opposing surfaces, the superconducting bump bond maintaining a low ohmic electrical contact between the first and second opposing surfaces at temperatures below 100 degrees Kelvin, wherein at least one of the first or second superconducting regions comprise material with a melting point of at least 700 degrees Celsius.

Abstract: A semiconductor structure and methods for the creation of solder bumps configured to carry a signal and solder bumps configured for ground planes and/or mechanical connections as well as methods for increasing reliability of a chip package generally include formation of multiple sized bump bonds on under bump metallization patterns and/or pads of the same dimension. The signal carrying solder bumps are larger in terms of diameter and bump height than solder bumps configured for ground plane and/or mechanical connections.

Abstract: A technique relates to a device. First thin films are characterized by having a first opposing surface and a first connection surface in which the first connection surface is in physical contact with a first superconducting region. Second thin films are characterized by having a second opposing surface and a second connection surface in which the first and second opposing surfaces are opposite one another. The second connection surface is in physical contact with a second superconducting region. A solder material electrically connects the first and second opposing surfaces, and the solder material is characterized by maintaining a low ohmic electrical contact between the first and second opposing surfaces at temperatures below 100 degrees Kelvin. The first and second superconducting regions are formed of materials that have a melting point of at least 700 degrees Celsius.

Abstract: Semiconductor devices and electronics packaging methods include integrated circuit chips having redundant signal bond pads along with signal bond pads connected to the same signal port for non-destructive testing of the integrated circuit chips prior to packaging. Electrical testing is made via the redundant signal bond after which qualified integrated circuit chips can be attached to a pristine and bumped final interposer or printed circuit board to provide increased reliability to the assembled electronic package.

Abstract: A structure has a first substrate bonded to a first under-bump metallization (UBM) structure, the first UBM structure comprising a first bonding region laterally surrounded by a first superconducting region. A second substrate is bonded to a second under-bump metallization (UBM) structure, the second UBM structure comprising a second bonding region laterally surrounded by a second superconducting region; and a superconducting solder material joins the first UBM structure to the second UBM structure.

Abstract: A technique relates to a structure. An under-bump-metallization (UBM) structure includes a first region and a second region. The first and second regions are laterally positioned in the UBM structure. The first region includes a superconducting material. A substrate opposes the UBM structure. A superconducting solder material joins the first region to the substrate and the second region to the substrate.

Abstract: A semiconductor structure and methods for the creation of solder bumps configured to carry a signal and solder bumps configured for ground planes and/or mechanical connections as well as methods for increasing reliability of a chip package generally include formation of multiple sized bump bonds on under bump metallization patterns and/or pads of the same dimension. The signal carrying solder bumps are larger in terms of diameter and bump height than solder bumps configured for ground plane and/or mechanical connections.

Abstract: A semiconductor structure and methods of forming the semiconductor structure generally includes providing a thermocompression bonded superconducting metal layer sandwiched between a first silicon substrate and a second silicon substrate. The second substrate includes a plurality of through silicon vias to the thermocompression bonded superconducting metal layer. A second superconducting metal is electroplated into the through silicon vias using the thermocompression bonded superconducting metal layer as a bottom electrode during the electroplating process, wherein the filling is from the bottom upwards.

Abstract: A semiconductor structure and methods of forming the semiconductor structure include a solder bump self-aligned to a through-substrate-via, wherein the solder bump and the through-substrate-via are formed of a conductive metal material, and wherein the through-substrate-via is coupled to a buried metallization layer, which is formed of a different conductive metal material.

Abstract: A semiconductor structure and methods for the creation of solder bumps configured to carry a signal and solder bumps configured for ground planes and/or mechanical connections as well as methods for increasing reliability of a chip package generally include formation of multiple sized bump bonds on under bump metallization patterns and/or pads of the same dimension. The signal carrying solder bumps are larger in terms of diameter and bump height than solder bumps configured for ground plane and/or mechanical connections.

Abstract: A semiconductor structure and methods of forming the semiconductor structure include a solder bump self-aligned to a through-substrate-via, wherein the solder bump and the through-substrate-via are formed of a conductive metal material, and wherein the through-substrate-via is coupled to a buried metallization layer, which is formed of a different conductive metal material.

Abstract: A MEMS device comprises an electro mechanical element in a sealed chamber containing a gas comprising a reactive gas selected to react with any contaminants that may be present or formed on the operating surfaces of the device in a manner to maximize the electrical conductivity of the surfaces during operation of the device. The MEMS device may comprise a MEMS switch having electrical contacts as the operating surfaces. The reactive gas may comprise hydrogen or an azane, optionally mixed with an inert gas, or any combination of the gases. The corresponding process provides a means to substantially reduce or eliminate contaminants present or formed on the operating surfaces of MEMS devices in a manner to maximize the electrical conductivity of the surfaces during operation of the devices.

Abstract: A structure has a first substrate bonded to a first under-bump metallization (UBM) structure, the first UBM structure comprising a first bonding region laterally surrounded by a first superconducting region. A second substrate is bonded to a second under-bump metallization (UBM) structure, the second UBM structure comprising a second bonding region laterally surrounded by a second superconducting region; and a superconducting solder material joins the first UBM structure to the second UBM structure.

Abstract: A device has a first stack of thin films, the first stack of thin films having a first opposing surface and a first connection surface, wherein the first connection surface contacts a first superconducting region; a second stack of thin films, the second stack of thin films having a second opposing surface and a second connection surface, wherein the second connection surface contacts a second superconducting region; and a superconducting bump bond electrically connecting the first and second opposing surfaces, the superconducting bump bond maintaining a low ohmic electrical contact between the first and second opposing surfaces at temperatures below 100 degrees Kelvin, wherein at least one of the first or second superconducting regions comprise material with a melting point of at least 700 degrees Celsius.

Abstract: A technique relates to a structure. An under-bump-metallization (UBM) structure includes a first region and a second region. The first and second regions are laterally positioned in the UBM structure. The first region includes a superconducting material. A substrate opposes the UBM structure. A superconducting solder material joins the first region to the substrate and the second region to the substrate.

Abstract: A technique relates to a device. First thin films are characterized by having a first opposing surface and a first connection surface in which the first connection surface is in physical contact with a first superconducting region. Second thin films are characterized by having a second opposing surface and a second connection surface in which the first and second opposing surfaces are opposite one another. The second connection surface is in physical contact with a second superconducting region. A solder material electrically connects the first and second opposing surfaces, and the solder material is characterized by maintaining a low ohmic electrical contact between the first and second opposing surfaces at temperatures below 100 degrees Kelvin. The first and second superconducting regions are formed of materials that have a melting point of at least 700 degrees Celsius.