Abstract: Systems and methods for delivering and implanting heart valves are disclosed. The delivery systems can include an integrated introducer. The integrated introducer can include a sheath having an inner diameter that is smaller than the outer diameter of a delivery capsule of the delivery system and an outer diameter that is approximately equal to the outer diameter of the delivery capsule. The integrated introducer can include a hub having a hemostatic seal. The hub can have a locking mechanism configured to fix the integrated introducer in place on the delivery system.

Abstract: A method to determine fuel consumption, energy consumption, or both fuel consumption and energy consumption, during one test train run, or a plurality of test train runs, that is associated with modifying an operating parameter is provided. The method includes determining a reference fuel/energy consumption, and a cumulative ITE for one, or a plurality of reference train runs (CITERR) over a portion of track, and correcting the reference fuel/energy consumption using the CITERR of the one, or a plurality of reference train runs, to produce a corrected reference fuel/energy consumption value. The operating parameter is modified, and a modified fuel/energy consumption and cumulative ITE for the one, or a plurality of test train runs (CITETR), over the portion of track is determined, and a corrected test fuel/energy consumption value is obtained by correcting the modified fuel/energy consumption using the CITETR of the one, or a plurality of test train runs.

Abstract: A method to determine fuel consumption, energy consumption, or both fuel consumption and energy consumption, during one test train run, or a plurality of test train runs, that is associated with modifying an operating parameter is provided. The method includes determining a reference fuel/energy consumption, and a cumulative ITE for one, or a plurality of reference train runs (CITERR) over a portion of track, and correcting the reference fuel/energy consumption using the CITERR of the one, or a plurality of reference train runs, to produce a corrected reference fuel/energy consumption value. The operating parameter is modified, and a modified fuel/energy consumption and cumulative ITE for the one, or a plurality of test train runs (CITETR), over the portion of track is determined, and a corrected test fuel/energy consumption value is obtained by correcting the modified fuel/energy consumption using the CITETR of the one, or a plurality of test train runs.

Abstract: A method of manufacturing a phase change memory (PCM) includes forming a pinch plate layer transversely to a PCM layer that is insulated from the pinch plate layer by a dielectric layer. Biasing the pinch plate layer causes a depletion region to form in the PCM layer. During a read of the PCM in a reset or partial reset state the depletion region increases the resistance of the PCM layer significantly.

Abstract: A method of manufacturing a phase change memory (PCM) includes forming a pinch plate layer transversely to a PCM layer that is insulated from the pinch plate layer by a dielectric layer. Biasing the pinch plate layer causes a depletion region to form in the PCM layer. During a read of the PCM in a reset or partial reset state the depletion region increases the resistance of the PCM layer significantly.

Abstract: A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.

Abstract: A method of manufacturing a phase change memory (PCM) includes forming a pinch plate layer transversely to a PCM layer that is insulated from the pinch plate layer by a dielectric layer. Biasing the pinch plate layer causes a depletion region to form in the PCM layer. During a read of the PCM in a reset or partial reset state the depletion region increases the resistance of the PCM layer significantly.

Abstract: A phase change memory cell may be formed with a pair of chalcogenide phase change layers that are separated by a breakdown layer. The breakdown layer may be broken down prior to use of the memory so that a conductive breakdown point is defined within the breakdown layer. In some cases, the breakdown point may be well isolated from the surrounding atmosphere, reducing heat losses and decreasing current consumption. In addition, in some cases, the breakdown point may be well isolated from overlying and underlying electrodes, reducing issues related to contamination. The breakdown point may be placed between a pair of chalcogenide layers with the electrodes outbound of the two chalcogenide layers.

Abstract: An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some embodiments, reducing leakage.

Abstract: An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some embodiments, reducing leakage.

Abstract: An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some embodiments, reducing leakage.

Abstract: A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.

Abstract: An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some embodiments, reducing leakage.

Abstract: A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.

Abstract: Rather than depositing a heater material into a pore, a heater material may be first blanket deposited. The heater material may then be covered by a mask, such that the mask and the heater material may be etched to form a stack. Then, the region between adjacent stacks that form separate cells may be filled with an insulator. After removing the mask material, a pore is then formed in the insulator over the heater. This may then be filled with chalcogenide to form a phase change memory.

Abstract: Rather than depositing a heater material into a pore, a heater material may be first blanket deposited over a select device. The heater material may then be covered by a mask, such that the mask and the heater material may be etched to form a stack. Then, the region between adjacent stacks that form separate cells may be filled with an insulator. After removing the mask material, a pore is then formed in the insulator over the heater. This may then be filled with chalcogenide to form a phase change memory.

Abstract: An endless manual control for use in automation systems, such as automated recording consoles, which controls levels and other parameters of audio, video and other signals, by generating, storing, sending and receiving electronic control signals. The control's internal circuitry translates control movements into electronic signals describing the control's movements. These electronic signals, including external electronic signals which are inputed during certain modes of operation, are fed into a circuit for updating the circuit's memory of control levels. When either the minimum or maximum control level extreme is reached, the circuitry triggers a mechanism to stop the manual rotation of the control in the direction which had or would have caused that control level extreme to be reached.

Abstract: An endless manual control for use in automation systems, such as automated recording consoles, which controls levels and other parameters of audio, video and other signals, by generating, storing, sending and receiving electronic control signals. The control's internal circuitry translates control movements into electronic signals describing the control's movements. These electronic signals, including external electronic signals which are inputed during certain modes of operation, are fed into a circuit for updating the circuit's memory of control levels. When either the minimum or maximum control level extreme is reached, the circuitry triggers a mechanism to stop the manual rotation of the control in the direction which had or would have caused that control level extreme to be reached.

Abstract: A continuous-transmission frequency-modulated (CTFM) scan converted sonar with improved capability for detecting swimmers, miniature submarines and other small intruders in harbors and inlets, and adjacent offshore structures. The system is microprocessor based and menu driven from an operator interactive touch screen. The system utilizes a fast fourier transform (FFT) based frequency analyzer for range discrimination. An area moving target indicator (AMTI) portion of the system cancels echo returns from stationary objects that otherwise mask the echo return of the moving targets. The AMTI causes the system to survey the search area for a number of consecutive scans and store the data. On successive scans, only target information that differs from the stored target map is displayed, thereby reducing clutter caused by surrounding terrain.