Abstract: An identification system is disclosed which includes marks on an object for locating a region of the object which contains an identification in the form of either an etching or a responsive electronic circuit and a detection device for detecting the proximity of the first mark in order to localize the position of the etching or responsive electronic circuit so that the etching or responsive electronic circuit may be read.

Abstract: A method of phase-shifting an electrical signal (E) of given amplitude and phase angle. The basic function in the method comprises vectorial adding (.SIGMA.) of the two input signals (E1, E2) of the same amplitude but with different phase angles, an operator to correct the amplitude of the vectorial sum (.SIGMA.1), and an operator (C) to select one of the three signals (E1, E2, .SIGMA.1), which have different phase angles. The phase-shifter operates iteratively until the required phase-shift is obtained. All applications, mainly in the microwave range, to radars, telecommunications, etc.

Abstract: The invention concerns pre-implanted circuits in a rapid semiconductor such as GaAs, comprising a network of cells formed of active and passive components. The cells are supplied but are not interconnected between one another. The interconnection between the cells is made by capacitive or magnetic coupling between two metallization levels separated by an insulating layer. Between a component of a first cell and a component of a second cell, both pre-implanted in a substrate, the interconnection made by means of microstrips supported by the substrate and in ohmic contact with the said components and microstrips supported by an insulating layer, microstrips and insulator forming capacities in the zones where there is covering.

Abstract: The invention relates to a variable capacitance element operating in the ultra-high frequency range. In order to integrate this element on to an integrated circuit chip, the element is designed so that the control voltage does not interfere with the ultra-high frequency signal and has neither filters nor shock chokes which are not integrable. The element according to the invention utilizes the junction capacitances variation of at least one diode, reverse-biased by a voltage across a resistor, the high frequency signal being at the diode anode. The element construction comprises an active zone in a semiinsulating substrate. Two metallizations partly cover the active zone and form therewith at least one diode. A projection to the active zone forms the resistor, to which is applied the control voltage. The diodes are p-n junctions of schottky diodes. The semiconductor material is Si or from the III-V group. Application to oscillators, filters, phase shifters, etc. in ultra-high frequency equipment.

Abstract: The invention relates to an ultra-high frequency switching matrix. Only active components, i.e. field effect transistors, are used in the integrated circuit construction of the matrix according to the invention. Coupling between an input channel and an output channel is obtained by a power divider on the input channel, which is a bi-drain transistor or a differential amplifier, a controllable switch in the form of a bi-grid transistor or two transistors in series, and a power combiner on the output channel, which is a multi-grid transistor or several transistors in series. Application is to telecommunications, particularly satellite telecommunications.

Abstract: The invention provides a high gain ultra high frequency amplifier with high output power and low phase shift. This amplifier, whose organization is arborescent, comprises a plurality of series amplification stages (1st to 5th), each stage comprising a plurality of elementary cells. Each cell has only one input but at least two outputs. A cell is, for example, a field effect transistor, with input at the gate and outputs at two drains. The input of the first transistor forms the input of the amplifier. A metalization which joins together all the outputs of the transistors of the last stage forms the output of the amplifier. The transistors are input and output matched by means of microstrip lines, capacities and inductances. The monolithic implantation of this amplifier may, among other things, be provided concentrically about the input transistor or linearly with the transistors of the last stage on one line and those of all the other stages on another line.