Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: A compound represented by one of the formulae: BaaMobOc??(1), MOdPeOf??(2) or BagMohPiOj??(3) wherein for formula (1) the ratio of a:b is from 1:100 to 100:1, wherein for formula (2) the ratio of d:e is from 1:100 to less than 1:1 or from greater than 1:1 to 100:1, wherein for formula (3) the ratio of g:h is from 1:100 to less than 1.5:1, wherein for formula (3) the ratio of g:i is from 1:100 to 100:1, wherein for formula (3) the ratio of h:i is from 1:100 to less than 1:2, or from greater than 1:2 to less than 2:1, or from greater than 2:1 to 100:1, and wherein the molybdenum present within the compound is in the 5+ oxidation state.

Abstract: A compound represented by one of the formulae: BaaMobOc??(1), MOdPeOf??(2) or BagMohPiOj??(3) wherein for formula (1) the ratio of a:b is greater than 1:1, wherein for formula (2) the ratio of d:e is from 1:100 to 0.45:1 or from 0.55:1 to 100:1, wherein for formula (3) the ratio of g:h is from 1:7 to 1:2 and the ratio of g:i is from 1:3 to 1:1, or the ratio of g:h is from 0.6:1 to 100:1 and the ratio of g:i is from 2.2:1 to 100:1, and wherein the molybdenum present within the compound is in the 4+ oxidation state.

Abstract: The present disclosure provides methods and compositions for the detection of SARS-CoV-2 by CRISPR/Cas collateral RNAse activity.

Abstract: The present disclosure provides improved detection (e.g., diagnostic) assays that utilize a Cas protein collateral cleavage activity.

Abstract: The present disclosure provides improved detection (e.g., diagnostic) assays that utilize a Cas protein collateral cleavage activity.

Abstract: Provided herein are methods of amplifying and detecting drug resistance markers (e.g., antibiotic resistance genes) from pathogens in complex samples (e.g., blood), as well as related panels and compositions (e.g., systems, cartridges, and kits).

Abstract: Provided herein are methods of amplifying and detecting biothreat pathogens in complex samples (e.g., blood), as well as related panels and compositions (e.g., systems, cartridges, and kits).

Abstract: Provided herein are methods of amplifying and detecting pathogens and drug resistance markers (e.g., antibiotic resistance genes) in complex samples (e.g., blood), as well as related panels and compositions (e.g., primers, probes, magnetic particles, systems, cartridges, and kits). The methods, panels, and compositions can be used for comprehensive detection of pathogens and drug resistance markers for patient identification, patient selection, optimization of therapies, and antimicrobial stewardship.

Abstract: The invention relates to packaged lyophilized agents. In particular, the present invention relates to compact lyophilized agents that are packaged in flexible containers, and systems for their manufacture and use.

Abstract: A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.

Abstract: Provided herein are methods of detecting and sequencing target nucleic acids in complex samples (e.g., blood), as well as related panels and compositions (e.g., systems, cartridges, and kits).

Abstract: The invention concerns a coupling for use in forming a sealed joint between first and second tubular members. The coupling provides a through-passage defined by an inner coupling face and having a first open end for insertion of the first tubular member into a first region of the through-passage and a second open end for insertion of the second tubular member into a second region of the through-passage. A first inwardly directed engagement recess is provided in the inner coupling face in the first region of the through-passage and a second inwardly directed engagement recess is provided in the inner coupling face in the second region of the passage. In the assembled joint, the first inwardly directed engagement recess aligns with a first outwardly directed engagement recess of the first tubular member to form a first channel for receipt of a first retainer to secure the first tubular member in the coupling.

Abstract: A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.

Abstract: A hammer for installing a gasket into a joint between two pipes, the hammer comprising two opposed substantially rectangular, non-square strike surfaces which are rotationally offset from one another by 90 degrees such that an appropriate substantially rectangular, non-square strike surface may be selected by the user and applied to a gasket by simply rotating the hammer in the user's hands without requiring the user to relocate around the gasket.

Abstract: A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are electrically coupled to a source electrode of the MOSFET. A split gate with a central opening is disposed above the drain drift region between the RESURF trenches. A two-level LDD region is disposed below the central opening in the split gate. A contact metal stack makes contact with a source region at lateral sides of the triple contact structure, and with a body contact region and the field plates in the RESURF trenches at a bottom surface of the triple contact structure. A perimeter RESURF trench surrounds the MOSFET. A field plate in the perimeter RESURF trench is electrically coupled to the source electrode of the MOSFET. An integrated snubber may be formed in trenches formed concurrently with the RESURF trenches.

Abstract: The invention features methods, systems, and panels for rapid detection of Candida species (e.g., Candida auris, Candida lusitaniae, Candida haemulonii, Candida duobushaemulonii, and Candida pseudohaemulonii) in biological samples (e.g., whole blood) and environmental samples (e.g., environmental swabs, e.g., surface swabs), and for diagnosis and monitoring of diseases, including Candidiasis and sepsis.

Abstract: A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.

Abstract: A vertical, high-voltage MOS transistor, which has a source region, a body contact region, and a number of trenches structures with field plates, and a method of forming the MOS transistor increase the on-state resistance of the MOS transistor by reducing the trench pitch. Trench pitch can be reduced with metal contacts that simultaneously touch the source regions, the body contact regions, and the field plates. Trench pitch can also be reduced with a gate that increases the size of the LDD region.