Patents by Inventor John Manning Savidge Neilson
John Manning Savidge Neilson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11444191Abstract: A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.Type: GrantFiled: August 11, 2020Date of Patent: September 13, 2022Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Christopher Boguslaw Kocon, Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara
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Publication number: 20200373424Abstract: A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.Type: ApplicationFiled: August 11, 2020Publication date: November 26, 2020Inventors: Christopher Boguslaw Kocon, Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara
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Patent number: 10811533Abstract: A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are electrically coupled to a source electrode of the MOSFET. A split gate with a central opening is disposed above the drain drift region between the RESURF trenches. A two-level LDD region is disposed below the central opening in the split gate. A contact metal stack makes contact with a source region at lateral sides of the triple contact structure, and with a body contact region and the field plates in the RESURF trenches at a bottom surface of the triple contact structure. A perimeter RESURF trench surrounds the MOSFET. A field plate in the perimeter RESURF trench is electrically coupled to the source electrode of the MOSFET. An integrated snubber may be formed in trenches formed concurrently with the RESURF trenches.Type: GrantFiled: April 27, 2016Date of Patent: October 20, 2020Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Christopher Boguslaw Kocon, Hideaki Kawahara, Simon John Molloy, Satoshi Suzuki, John Manning Savidge Neilson
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Patent number: 10741684Abstract: A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.Type: GrantFiled: October 3, 2016Date of Patent: August 11, 2020Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Christopher Boguslaw Kocon, Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara
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Patent number: 10573718Abstract: A vertical, high-voltage MOS transistor, which has a source region, a body contact region, and a number of trenches structures with field plates, and a method of forming the MOS transistor increase the on-state resistance of the MOS transistor by reducing the trench pitch. Trench pitch can be reduced with metal contacts that simultaneously touch the source regions, the body contact regions, and the field plates. Trench pitch can also be reduced with a gate that increases the size of the LDD region.Type: GrantFiled: November 9, 2016Date of Patent: February 25, 2020Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Christopher Boguslaw Kocon, Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara
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Patent number: 10553717Abstract: A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are electrically coupled to a source electrode of the MOSFET. A split gate with a central opening is disposed above the drain drift region between the RESURF trenches. A two-level LDD region is disposed below the central opening in the split gate. A contact metal stack makes contact with a source region at lateral sides of the triple contact structure, and with a body contact region and the field plates in the RESURF trenches at a bottom surface of the triple contact structure. A perimeter RESURF trench surrounds the MOSFET. A field plate in the perimeter RESURF trench is electrically coupled to the source electrode of the MOSFET. An integrated snubber may be formed in trenches formed concurrently with the RESURF trenches.Type: GrantFiled: April 26, 2016Date of Patent: February 4, 2020Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Christopher Boguslaw Kocon, Hideaki Kawahara, Simon John Molloy, Satoshi Suzuki, John Manning Savidge Neilson
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Patent number: 9941383Abstract: Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or grown epitaxial silicon for controlled drift region thickness and fast switching speed.Type: GrantFiled: May 31, 2016Date of Patent: April 10, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Jacek Korec, John Manning Savidge Neilson, Sameer Pendharkar
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Patent number: 9881995Abstract: A semiconductor device includes MOSFET cells having a drift region of a first conductivity type. A first and second active area trench are in the drift region. A split gate uses the active trenches as field plates or includes planar gates between the active trenches including a MOS gate electrode (MOS gate) and a diode gate electrode (diode gate). A body region of the second conductivity type in the drift region abuts the active trenches. A source of the first conductivity type in the body region includes a first source portion proximate to the MOS gate and a second source portion proximate to the diode gate. A vertical drift region uses the drift region below the body region to provide a drain. A connector shorts the diode gate to the second source portion to provide an integrated channel diode. The MOS gate is electrically isolated from the first source portion.Type: GrantFiled: February 3, 2017Date of Patent: January 30, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Christopher Boguslaw Kocon, John Manning Savidge Neilson
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Patent number: 9673317Abstract: A semiconductor device includes a vertical MOS transistor with a plurality of parallel RESURF drain trenches separated by a constant spacing in a vertical drain drift region. The vertical MOS transistor has chamfered corners; each chamfered corner extends across at least five of the drain trenches. A RESURF termination trench surrounds the drain trenches, separated from sides and ends of the drain trenches by distances which are functions of the drain trench spacing. At the chamfered corners, the termination trench includes external corners which extend around an end of a drain trench which extends past an adjacent drain trench, and includes internal corners which extend past an end of a drain trench which is recessed from an adjacent drain trench. The termination trench is separated from the drain trenches at the chamfered corners by distances which are also functions of the drain trench spacing.Type: GrantFiled: August 17, 2016Date of Patent: June 6, 2017Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Hideaki Kawahara, Christopher Boguslaw Kocon, Simon John Molloy, Jayhoon Chung, John Manning Savidge Neilson
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Publication number: 20170148871Abstract: A semiconductor device includes MOSFET cells having a drift region of a first conductivity type. A first and second active area trench are in the drift region. A split gate uses the active trenches as field plates or includes planar gates between the active trenches including a MOS gate electrode (MOS gate) and a diode gate electrode (diode gate). A body region of the second conductivity type in the drift region abutts the active trenches. A source of the first conductivity type in the body region includes a first source portion proximate to the MOS gate and a second source portion proximate to the diode gate. A vertical drift region uses the drift region below the body region to provide a drain. A connector shorts the diode gate to the second source portion to provide an integrated channel diode. The MOS gate is electrically isolated from the first source portion.Type: ApplicationFiled: February 3, 2017Publication date: May 25, 2017Inventors: Christopher Boguslaw Kocon, John Manning Savidge Neilson
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Patent number: 9601612Abstract: A semiconductor device includes MOSFET cells having a drift region of a first conductivity type. A first and second active area trench are in the drift region. A split gate uses the active trenches as field plates or includes planar gates between the active trenches including a MOS gate electrode (MOS gate) and a diode gate electrode (diode gate). A body region of the second conductivity type in the drift region abutts the active trenches. A source of the first conductivity type in the body region includes a first source portion proximate to the MOS gate and a second source portion proximate to the diode gate. A vertical drift region uses the drift region below the body region to provide a drain. A connector shorts the diode gate to the second source portion to provide an integrated channel diode. The MOS gate is electrically isolated from the first source portion.Type: GrantFiled: March 21, 2016Date of Patent: March 21, 2017Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Christopher Boguslaw Kocon, John Manning Savidge Neilson
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Publication number: 20170062573Abstract: A vertical, high-voltage MOS transistor, which has a source region, a body contact region, and a number of trenches structures with field plates, and a method of forming the MOS transistor increase the on-state resistance of the MOS transistor by reducing the trench pitch. Trench pitch can be reduced with metal contacts that simultaneously touch the source regions, the body contact regions, and the field plates. Trench pitch can also be reduced with a gate that increases the size of the LDD region.Type: ApplicationFiled: November 9, 2016Publication date: March 2, 2017Inventors: Christopher Boguslaw Kocon, Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara
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Publication number: 20170025525Abstract: A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.Type: ApplicationFiled: October 3, 2016Publication date: January 26, 2017Inventors: Christopher Boguslaw Kocon, Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara
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Patent number: 9525035Abstract: A vertical, high-voltage MOS transistor, which has a source region, a body contact region, and a number of trenches structures with field plates, and a method of forming the MOS transistor increase the on-state resistance of the MOS transistor by reducing the trench pitch. Trench pitch can be reduced with metal contacts that simultaneously touch the source regions, the body contact regions, and the field plates. Trench pitch can also be reduced with a gate that increases the size of the LDD region.Type: GrantFiled: December 8, 2014Date of Patent: December 20, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Christopher Boguslaw Kocon, Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara
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Publication number: 20160359039Abstract: A semiconductor device includes a vertical MOS transistor with a plurality of parallel RESURF drain trenches separated by a constant spacing in a vertical drain drift region. The vertical MOS transistor has chamfered corners; each chamfered corner extends across at least five of the drain trenches. A RESURF termination trench surrounds the drain trenches, separated from sides and ends of the drain trenches by distances which are functions of the drain trench spacing. At the chamfered corners, the termination trench includes external corners which extend around an end of a drain trench which extends past an adjacent drain trench, and includes internal corners which extend past an end of a drain trench which is recessed from an adjacent drain trench. The termination trench is separated from the drain trenches at the chamfered corners by distances which are also functions of the drain trench spacing.Type: ApplicationFiled: August 17, 2016Publication date: December 8, 2016Inventors: Hideaki KAWAHARA, Christopher Boguslaw KOCON, Simon John MOLLOY, Jayhoon CHUNG, John Manning Savidge NEILSON
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Patent number: 9484450Abstract: A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.Type: GrantFiled: June 9, 2014Date of Patent: November 1, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Christopher Boguslaw Kocon, Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara
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Publication number: 20160276459Abstract: Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or grown epitaxial silicon for controlled drift region thickness and fast switching speed.Type: ApplicationFiled: May 31, 2016Publication date: September 22, 2016Inventors: Jacek Korec, John Manning Savidge Neilson, Sameer Pendharkar
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Patent number: 9450082Abstract: A semiconductor device includes a vertical MOS transistor with a plurality of parallel RESURF drain trenches separated by a constant spacing in a vertical drain drift region. The vertical MOS transistor has chamfered corners; each chamfered corner extends across at least five of the drain trenches. A RESURF termination trench surrounds the drain trenches, separated from sides and ends of the drain trenches by distances which are functions of the drain trench spacing. At the chamfered corners, the termination trench includes external corners which extend around an end of a drain trench which extends past an adjacent drain trench, and includes internal corners which extend past an end of a drain trench which is recessed from an adjacent drain trench. The termination trench is separated from the drain trenches at the chamfered corners by distances which are also functions of the drain trench spacing.Type: GrantFiled: June 9, 2014Date of Patent: September 20, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Hideaki Kawahara, Christopher Boguslaw Kocon, Simon John Molloy, Jayhoon Chung, John Manning Savidge Neilson
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Publication number: 20160240653Abstract: A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are electrically coupled to a source electrode of the MOSFET. A split gate with a central opening is disposed above the drain drift region between the RESURF trenches. A two-level LDD region is disposed below the central opening in the split gate. A contact metal stack makes contact with a source region at lateral sides of the triple contact structure, and with a body contact region and the field plates in the RESURF trenches at a bottom surface of the triple contact structure. A perimeter RESURF trench surrounds the MOSFET. A field plate in the perimeter RESURF trench is electrically coupled to the source electrode of the MOSFET. An integrated snubber may be formed in trenches formed concurrently with the RESURF trenches.Type: ApplicationFiled: April 27, 2016Publication date: August 18, 2016Inventors: Christopher Boguslaw Kocon, Hideaki Kawahara, Simon John Molloy, Satoshi Suzuki, John Manning Savidge Neilson
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Publication number: 20160240667Abstract: A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are electrically coupled to a source electrode of the MOSFET. A split gate with a central opening is disposed above the drain drift region between the RESURF trenches. A two-level LDD region is disposed below the central opening in the split gate. A contact metal stack makes contact with a source region at lateral sides of the triple contact structure, and with a body contact region and the field plates in the RESURF trenches at a bottom surface of the triple contact structure. A perimeter RESURF trench surrounds the MOSFET. A field plate in the perimeter RESURF trench is electrically coupled to the source electrode of the MOSFET. An integrated snubber may be formed in trenches formed concurrently with the RESURF trenches.Type: ApplicationFiled: April 26, 2016Publication date: August 18, 2016Inventors: Christopher Boguslaw Kocon, Hideaki Kawahara, Simon John Malloy, Satoshi Suzuki, John Manning Savidge Neilson