Abstract: A semiconductor manufacturing method analyzes topography variations in three dimensions for each photolithographic level and determines critical dimension (CD) bias compensation as inputs to mask layout creation. Accurate predictions of topography variation for a specific mask design are made at the die level using known pattern density and CMP planarization length characteristics for a specific pattern. Exhaustive characterization of the photoresist response to de-focus and mask bias is determined by artificially expanding loss of CD through focus. Mask compensation to an expanded range of focus over all lines and spaces is maintained within the specification. 3D mask density data is obtained to determine the height component at each pixel location in the die. The resulting 3D OPC model is then utilized for mask creation.

Abstract: A method and apparatus used to calibrate high-resolution electron microscopes where a single standard provides multiple samples, each having a different atomic structure, permits rapid accurate calibration of the entire range of magnifications. The different atomic structure dimensions possess known reference measurement data. The S/TEM is adjusted to focus onto the crystal lattice structure of each sample in a selected sequence. Measurements of these lattice spacings are compared to known dimensions. If S/TEM measurements do not agree with the lattice spacing dimensions, the S/TEM magnification is adjusted to reflect known dimensions. Typical standard exchange and associated processing steps are eliminated by the use of the single standard comprising of a plurality of samples.

Abstract: The present invention relates to a device for testing particles for composition and concentration. The device includes a particle counter, a collector screen, and a mass spectrometer. In one embodiment, the collector screen is positioned to receive particles received by the particle counter, and the mass spectrometer is positioned to receive counted particles retained on the collector screen.

Abstract: A reflective lens with at least one curved surface formed of polycrystalline material. In an example embodiment a lens structure includes a substrate having a surface of predetermined curvature and a film formed along a surface of the substrate with multiple individual members each having at least one similar orientation relative to the portion of the substrate surface adjacent the member such that collectively the members provide predictable angles for diffraction of x-rays generated from a common source.