Patents by Inventor John Michael Siket, Jr.

John Michael Siket, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field plated schottky diode and method of fabrication therefor
    Patent number: 6790753
    Abstract: A Schottky diode is fabricated by a sequence of fabrication by a sequence of fabrication steps. An active region of a semiconductor substrate is defined in which a Schottky diode is fabricated. At least first and second layers of insulating material are applied over the active area. A first layer of insulating material, having a first etching rate, is applied over the active area. A second layer of insulating material having a second, greater, etch rate is applied over the first layer of insulating material to a thickness that is about twice the thickness of the first layer of insulating material. The insulating material is patterned and a window is etched through the layers of insulating material to the semiconductor substrate. Metal is applied and unwanted metal is etched away leaving metal in the window forming a Schottky contact therein. One or more barrier layers may be employed.
    Type: Grant
    Filed: October 29, 2003
    Date of Patent: September 14, 2004
    Assignee: Agere Systems Inc
    Inventors: John Charles Desko, Michael J Evans, Chung-Ming Hsieh, Tzu-Yen Hsieh, Bailey R Jones, Thomas J. Krutsick, John Michael Siket, Jr., Brian Eric Thompson, Steven W. Wallace
  • Field plated Schottky diode
    Patent number: 6690037
    Abstract: A Schottky diode is fabricated by a sequence of fabrication by a sequence of fabrication steps. An active region of a semiconductor substrate is defined in which a Schottky diode is fabricated. At least first and second layers of insulating material are applied over the active area. A first layer of insulating material, having a first etching rate, is applied over the active area. A second layer of insulating material having a second, greater, etch rate is applied over the first layer of insulating material to a thickness that is about twice the thickness of the first layer of insulating material. The insulating material is patterned and a window is etched through the layers of insulating material to the semiconductor substrate. Metal is applied and unwanted metal is etched away leaving metal in the window forming a Schottky contact therein. One or more barrier layers may be employed.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: February 10, 2004
    Assignee: Agere Systems Inc.
    Inventors: John Charles Desko, Michael J Evans, Chung-Ming Hsieh, Tzu-Yen Hsieh, Bailey R Jones, Thomas J. Krutsick, John Michael Siket, Jr., Brian Eric Thompson, Steven W. Wallace