Abstract: A process is disclosed for improving the adhesion of a polymeric resist to a gold metallization surface. The process includes the use of a chelating silane as an adhesion promoter between the resist and the gold metallization surface. The improved resist adhesion to the gold metallization surface is attributed to a complexation or chemisorption mechanism. The adhesion promoters of interest contain moieties capable of acting as chelating or chemisorption sites on the molecular silane, thus creating layer-to-layer bonding with greater strength than that observed where just Van der Waals interactions occur to the gold surface atoms.

Abstract: A method is disclosed of delineating a desired integrated circuit pattern upon a circuit substrate. According to the method, the copolymer poly(methyl alpha-chloroacrylate-co-methacrylonitrile) is formed by emulsion polymerization techniques. The copolymer is then dissolved in a spinning solvent that will dissolve the copolymer and form a viscous solution. The solution is applied to the surface of the substrate and the substrate spinned to form a smooth, uniform resist film of about 0.3 to 1.0 micron in thickness. The resist film is heated and the region of the resist film to be patterned then exposed to ionizing radiation until exposures greater than 1.5.times.10.sup.-5 C/cm.sup.2 are obtained. The exposed regions of the resist are then developed to the substrate.

Abstract: A substrate is patterned by first dissolving polymethacrylonitrile in a spinning solvent that will dissolve the polymer and form a viscous solution. The solution is then applied to the surface of the substrate and the substrate spun to form a smooth, uniform resist film of at least 3000 angstroms in thickness. The resist film is heated and the region of the resist film to be patterned is then exposed to ionizing radiation until the dissolution rate of the irradiated region of the resist film is greater than five times the dissolution rate of the unirradiated region of the resist film. The exposed regions of the resist film are then developed to the substrate in a mixture of acetonitrile or benzonitrile and toluene.