Abstract: A firearm in which a mechanical identification is integral with the surface of the chamber. Preferably the identification markings are elongated (ridges or grooves) in the direction of spent casing extraction. The extracted casings are thereby marked with a unique weapon identification number, which can easily be read by standard forensics methods.

Abstract: A method of fabricating a quantum well device is presented which includes forming one or more quantum wells 48 by forming an epitaxy mask followed by selective deposition of one or more epitaxial layers. Selective deposition is accomplished by forming an epitaxy mask by sidewall defined masking, followed by epitaxial deposition of one or more layers (e.g. barrier layers 40 and 44 and a quantum layer 42) The epitaxy mask is formed by patterning an e-beam resist layer (e.g. polymethylmethacrylate 36), conformally depositing a glass layer (e.g. SiO.sub.2 38) on the resist, anisotropically etching the SiO.sub.2, and then removing the e-beam resist layer. The epitaxy mask fabrication technique allows patterning to define geometries that are much smaller than the beam itself and thereby provides the means required to define nanometer dimensioned horizontal (lateral) structures on and within epitaxial layers.

Abstract: A quantum dot logic unit (8) is provided which comprises a row of quantum dots (14, 16, and 18), with each quantum dot separated by vertical heterojunction tunneling barriers (20, 22, 24, and 26). Electric potentials placed on inputs (32, 34, and 36) are operable to modulate quantum states within the quantum dots, thus controlling electron tunneling through the tunneling barriers.

Abstract: A digital micro-mirror device (10), whose contacting elements (11, 17) are not prone to stick together. In the case of a deflecting mirror device, landing electrodes (17) are covered with a grating (19), which reduces the contacting area but still permits conduction between the mirror (11) and the landing electrode (17). Alternatively, the landing electrode (17) can be fabricated as a grated surface.

Abstract: In accordance with the present invention, there is provided a method by which narrow lateral dimensioned microelectronic structures can be formed using low temperature processes. An uncured resist layer (e.g. PMMA 42) is deposited on a supporting layer (e.g. silicon 40) and patterned. Then, by using an isotropic process such as a low temperature chemical vapor deposition, a conformal layer (e.g. silicon oxynitride 44) is deposited substantially evenly on the vertical walls and on the horizontal surfaces of the uncured resist layer. An anisotropic etch such as reactive ion etching is then used to substantially remove the conformal layer from the horizontal surfaces without substantially etching the conformal layer from the vertical walls of the resist. The resist can then be selectively removed, producing isolated vertical sidewall structures (e.g. silicon oxynitride 46) which could be used, for example, as a negative tone mask. Alternatively, instead of removing the resist, another resist layer (e.g.

Abstract: A resonant tunneling transistor (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched partially into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication methods include use of angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.

Abstract: A stencil mask (10) has a membrane (14) under tensile stress and at least one pattern opening (22) formed through the membrane (14). A plurality of stress relief openings (30) are formed in the membrane for reducing stress-induced distortion of the membrane and the mask pattern. The stress relief openings (30) are positioned to relieve concentrations of stress within the membrane (14) such as those resulting from non-regularities within the pattern. In one embodiment, a screening material (56), less rigid than the membrane (14), is contained within the stress relief openings (30). Methods of forming such masks (10) are also disclosed.

Abstract: A resonant tunneling diode (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication method uses angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.

Abstract: A resonant tunneling transistor (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched partially into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication methods include use of angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.

Abstract: A quantum dot logic unit (8) is provided which comprises a row of quantum dots (14, 16, and 18), with each quantum dot separated by vertical heterojunction tunneling barriers (20, 22, 24, and 26). Electric potentials placed on inputs (32, 34, and 36) are operable to modulate quantum states within the quantum dots, thus controlling electron tunneling through the tunneling barriers.

Abstract: A quantum effect device implementation of the Shannon Decomposition Function in the form of a Shannon Cell is provided in which a first quantum dot logic unit (50) is coupled between the X input and the output of the Shannon Cell. A second quantum dot logic unit (52) is coupled between the Y input and the output of the Shannon Cell. The control input to the Shannon Cell is coupled to both the first and second quantum dot logic units (50 and 52) such that current flows through the appropriate quantum dot logic unit (50 or 52) depending upon the logic state of the control input.

Abstract: A proprioceptive neuromuscular facilitation exercise device including a drive motor, gear mechanism connected with the drive motor, a control connected with the motor for operating the motor in either direction, and a rotating member connected with the gear mechanism and adapted to be coupled to a body member of a user for moving the body member in the desired direction. The movable member moves in increments and is lockable at desired positions for holding the body member against a force tending to return it to normal position or a force in the opposite direction. One exercise device rotates the upper torso relative to the spine. Another of the exercise devices rotates the upper legs of a user relative to the hip joints and lower legs relative to the knees. A further device operates the arms forward and backward relative to the shoulder joint and includes parallel vertical shafts movable together and apart to adjust for difference distances between the shoulder joints of a user.

Abstract: The ion beam which performs the printing on the resist through the mask is also used to perform the alignment function. Alignment marks are initially provided on the wafer of a material which emits light when an ion beam impinges thereon, such as silicon dioxide. An ion mask, preferably of silicon, is then positioned over the wafer and alignment marks and ions are directed to the alignment marks through the mask. The degree of alignment is determined by the amount of light emitted by the alignment marks since more ions will strike the alignment marks with increased alignment. The emitted light is detected and +X, -X, +Y, -Y and +theta and -theta error signals are provided on a continuous basis for closed loop control of the mask relative to the wafer under proper alignment is achieved.

Abstract: A method for forming a quantum effect switching device is disclosed which comprises the step of forming a heterostructure substrate 10. A silicon nitride layer 22 is formed on an outer surface of the substrate 10. An aluminum mask body 30 is formed using a lift-off procedure. Aluminum mask body 30 is then used to form a silicon nitride mask body 32 from the silicon nitride layer 22 using a CF.sub.4 /O.sub.2 reactive ion etch process. A boron trichloride etch process is then used to form a dual column structure 34 while removing the aluminum mask body 30. A buffered HF wet etch process removes the silicon nitride mask body 32. Separate metal contacts can then be made to electrically separate points on the outer surface of the dual column structure 34.

Abstract: A mask (38), which is particularly useful in parallel-printing ion beam lithography because of its dimensional stability, is disclosed. The mask (38) represents a relatively rigid screen (22) constructed from a relatively rigid material, such as monocrystalline silicon, with meshes (28) formed through the screen (22) over the entire area of the screen (22). The preferred embodiment applies a less rigid filler material (34) into the meshes (28) over the entire area of the screen (22), then removes the filler material (34) from transmissive areas (42) of the mask (38).