Patents by Inventor John O. Dukovic
John O. Dukovic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11934103Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a transfer device and a plurality of modules. The transfer device is configured to rotate a plurality of substrates between each of the modules, wherein one module includes a heating pedestal and another module includes a cooling pedestal. One module is utilized for inserting and removing the substrates from the system. At least the heating module is able to be sealed and filled with a process volume before applying the electric field.Type: GrantFiled: February 9, 2022Date of Patent: March 19, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Douglas A. Buchberger, Jr., Dmitry Lubomirsky, John O. Dukovic, Srinivas D. Nemani
-
Patent number: 11815816Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include an electrode assembly and a base assembly. The electrode assembly includes a permeable electrode. The base assembly includes one or more process fluid channels disposed around a circumference of the substrate support surface and configured to fill a process volume with a process fluid. The electrode assembly is configured to apply an electric field to a substrate disposed within the process volume.Type: GrantFiled: February 15, 2021Date of Patent: November 14, 2023Assignee: Applied Materials, Inc.Inventors: Douglas A Buchberger, Jr., Dmitry Lubomirsky, John O. Dukovic, Srinivas D. Nemani
-
Patent number: 11798606Abstract: One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) stack. Instead, the film stack is etched before the MTJ stack is deposited such that the spin on carbon layer and the anti-reflective coating layer are completely removed and a trench is formed within the dielectric capping layer and the oxide layer. Thereafter, MTJ stacks are deposited on the buffer layer and on the dielectric capping layer. An oxide capping layer is deposited such that it covers the MTJ stacks. An oxide fill layer is deposited over the oxide capping layer and the film stack is polished by chemical mechanical polishing (CMP). The embodiments described herein advantageously result in no damage to the MTJ stacks since etching is not required.Type: GrantFiled: May 24, 2021Date of Patent: October 24, 2023Assignee: APPLIED MATERIALS, INC.Inventors: John O. Dukovic, Srinivas D. Nemani, Ellie Y. Yieh, Praburam Gopalraja, Steven Hiloong Welch, Bhargav S. Citla
-
Publication number: 20220269179Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include an immersion bake head, which includes an electrode and is configured to be alternated between a hot pedestal and a cold pedestal. The immersion bake head serves as a substrate carrier and applies an electric field to the substrate. The immersion bake head additionally serves to provide and remove process fluid from the substrate using a plurality of fluid conduits.Type: ApplicationFiled: February 9, 2022Publication date: August 25, 2022Inventors: Douglas A. BUCHBERGER, JR., Dmitry LUBOMIRSKY, John O. DUKOVIC, Srinivas D. NEMANI
-
Publication number: 20220269180Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a transfer device and a plurality of modules. The transfer device is configured to rotate a plurality of substrates between each of the modules, wherein one module includes a heating pedestal and another module includes a cooling pedestal. One module is utilized for inserting and removing the substrates from the system. At least the heating module is able to be sealed and filled with a process volume before applying the electric field.Type: ApplicationFiled: February 9, 2022Publication date: August 25, 2022Inventors: Douglas A. BUCHBERGER, JR., Dmitry LUBOMIRSKY, John O. DUKOVIC, Srinivas D. NEMANI
-
Publication number: 20220260917Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include an electrode assembly and a base assembly. The electrode assembly includes a permeable electrode. The base assembly includes one or more process fluid channels disposed around a circumference of the substrate support surface and configured to fill a process volume with a process fluid. The electrode assembly is configured to apply an electric field to a substrate disposed within the process volume.Type: ApplicationFiled: February 15, 2021Publication date: August 18, 2022Inventors: Douglas A. BUCHBERGER, JR., Dmitry LUBOMIRSKY, John O. DUKOVIC, Srinivas D. NEMANI
-
Publication number: 20220199414Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a chamber body, which is configured to be filled with a process fluid, and a substrate carrier. The substrate carrier is disposed outside of the process volume while substrates are loaded onto the substrate carrier, but is rotated to a processing position either simultaneously or before entering the process fluid. The substrate carrier is rotated to a process position parallel to an electrode before an electric field is utilized to perform a post-exposure bake process on the substrate.Type: ApplicationFiled: December 18, 2020Publication date: June 23, 2022Inventors: Douglas A. BUCHBERGER, JR., Dmitry LUBOMIRSKY, John O. DUKOVIC, Srinivas D. NEMANI
-
Publication number: 20210305501Abstract: One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) stack. Instead, the film stack is etched before the MTJ stack is deposited such that the spin on carbon layer and the anti-reflective coating layer are completely removed and a trench is formed within the dielectric capping layer and the oxide layer. Thereafter, MTJ stacks are deposited on the buffer layer and on the dielectric capping layer. An oxide capping layer is deposited such that it covers the MTJ stacks. An oxide fill layer is deposited over the oxide capping layer and the film stack is polished by chemical mechanical polishing (CMP). The embodiments described herein advantageously result in no damage to the MTJ stacks since etching is not required.Type: ApplicationFiled: May 24, 2021Publication date: September 30, 2021Inventors: John O. DUKOVIC, Srinivas D. NEMANI, Ellie Y. YIEH, Praburam GOPALRAJA, Steven Hiloong WELCH, Bhargav S. CITLA
-
Patent number: 11049537Abstract: One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) stack. Instead, the film stack is etched before the MTJ stack is deposited such that the spin on carbon layer and the anti-reflective coating layer are completely removed and a trench is formed within the dielectric capping layer and the oxide layer. Thereafter, MTJ stacks are deposited on the buffer layer and on the dielectric capping layer. An oxide capping layer is deposited such that it covers the MTJ stacks. An oxide fill layer is deposited over the oxide capping layer and the film stack is polished by chemical mechanical polishing (CMP). The embodiments described herein advantageously result in no damage to the MTJ stacks since etching is not required.Type: GrantFiled: July 29, 2019Date of Patent: June 29, 2021Assignee: Applied Materials, Inc.Inventors: John O. Dukovic, Srinivas D. Nemani, Ellie Y. Yieh, Praburam Gopalraja, Steven Hiloong Welch, Bhargav S. Citla
-
Patent number: 11018223Abstract: The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes forming a multi-material layer on a bottom structure on a substrate, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, selectively removing the second layer from the multi-material layer from the substrate, and selectively oxidizing the bottom structure on the substrate after removing the second layer from the multi-material layer.Type: GrantFiled: July 3, 2019Date of Patent: May 25, 2021Assignee: Applied Materials, Inc.Inventors: Shiyu Sun, Nam Sung Kim, John O. Dukovic
-
Publication number: 20210035619Abstract: One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) stack. Instead, the film stack is etched before the MTJ stack is deposited such that the spin on carbon layer and the anti-reflective coating layer are completely removed and a trench is formed within the dielectric capping layer and the oxide layer. Thereafter, MTJ stacks are deposited on the buffer layer and on the dielectric capping layer. An oxide capping layer is deposited such that it covers the MTJ stacks. An oxide fill layer is deposited over the oxide capping layer and the film stack is polished by chemical mechanical polishing (CMP). The embodiments described herein advantageously result in no damage to the MTJ stacks since etching is not required.Type: ApplicationFiled: July 29, 2019Publication date: February 4, 2021Inventors: John O. DUKOVIC, Srinivas D. NEMANI, Ellie Y. YIEH, Praburam GOPALRAJA, Steven Hiloong WELCH, Bhargav S. CITLA
-
Publication number: 20200335583Abstract: The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes forming a multi-material layer on a bottom structure on a substrate, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, selectively removing the second layer from the multi-material layer from the substrate, and selectively oxidizing the bottom structure on the substrate after removing the second layer from the multi-material layer.Type: ApplicationFiled: July 3, 2019Publication date: October 22, 2020Inventors: Shiyu SUN, Nam Sung KIM, John O. DUKOVIC
-
Publication number: 20110031113Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel high speed electroplating method and apparatus to form a metal contact structure having selectively formed metal lines using an electrochemical plating process. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.Type: ApplicationFiled: October 15, 2010Publication date: February 10, 2011Inventors: Sergey Lopatin, Nicolay Y. Kovarsky, David Eaglesham, John O. Dukovic, Charles Gay
-
Patent number: 7736928Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel electroplating apparatus and method to form a metal contact structure having metal lines formed using an electrochemical plating process. The apparatus and methods described herein remove the need to perform the often costly processing steps of performing a mask preparation and formation steps, such as screen printing, lithographic steps and inkjet printing steps, to form a contact structure. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.Type: GrantFiled: December 1, 2006Date of Patent: June 15, 2010Assignee: Applied Materials, Inc.Inventors: Sergey Lopatin, John O. Dukovic, David Eaglesham, Nicolay Y. Kovarsky, Robert Bachrach, John Busch, Charles Gay
-
Patent number: 7704352Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel high speed electroplating method and apparatus to form a metal contact structure having selectively formed metal lines using an electrochemical plating process. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.Type: GrantFiled: December 1, 2006Date of Patent: April 27, 2010Assignee: Applied Materials, Inc.Inventors: Sergey Lopatin, Nicolay Y. Kovarsky, David Eaglesham, John O. Dukovic, Charles Gay
-
Publication number: 20080128268Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel high speed electroplating method and apparatus to form a metal contact structure having selectively formed metal lines using an electrochemical plating process. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.Type: ApplicationFiled: December 1, 2006Publication date: June 5, 2008Inventors: Sergey Lopatin, Nicolay Y. Kovarsky, David Eaglesham, John O. Dukovic, Charles Gay
-
Publication number: 20080132082Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel electroplating apparatus and method to form a metal contact structure having metal lines formed using an electrochemical plating process. The apparatus and methods described herein remove the need to perform the often costly processing steps of performing a mask preparation and formation steps, such as screen printing, lithographic steps and inkjet printing steps, to form a contact structure. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.Type: ApplicationFiled: December 1, 2006Publication date: June 5, 2008Inventors: Sergey Lopatin, John O. Dukovic, David Eaglesham, Nicolay Y. Kovarsky, Robert Bachrach, John Busch, Charles Gay
-
Publication number: 20080128019Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel high speed electroplating method and apparatus to form a metal contact structure having selectively formed metal lines using an electrochemical plating process. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.Type: ApplicationFiled: December 1, 2006Publication date: June 5, 2008Inventors: Sergey LOPATIN, Nicolay Y. Kovarsky, David Eaglesham, John O. Dukovic, Charles Gay
-
Publication number: 20080092947Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell metal contact structure that has improved electrical and mechanical properties through the use of an electrochemical plating process. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connections that is reliable and cost effective. One or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing common metal, such as copper. However, generally the electroplated portions of the interconnecting layer may contain a substantially pure metal or a metal alloy layer. Methods are discussed herein that are used to form a solar cell containing conductive metal interconnect layer(s) that have a low intrinsic stress.Type: ApplicationFiled: October 24, 2006Publication date: April 24, 2008Inventors: Sergey Lopatin, Charles Gay, David Eaglesham, John O. Dukovic, Nicolay Y. Kovarsky
-
Patent number: 7214297Abstract: A contact ring for an electrochemical plating system is provided. The contact ring includes an annular substrate supporting member, a plurality of radially positioned conductive substrate contact pins extending from the substrate supporting member, an annular conductive thief element attached to the substrate supporting member, and at least one source of electrical power in electrical communication with the contact pins and the conductive thief element.Type: GrantFiled: June 28, 2004Date of Patent: May 8, 2007Assignee: Applied Materials, Inc.Inventors: You Wang, Anzhong Chang, John O. Dukovic