Abstract: A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0?X<1 and 0?Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.

Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well stricture. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.

Abstract: A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.

Abstract: A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.

Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.

Abstract: An inflator (40) includes a chamber (220) for storing inflation (222) fluid under pressure. A first member (82) has an inner perimeter that defines an opening (92) for discharging the inflation fluid (222). A rupturable closure member (100) extends across the opening (92) and blocks inflation fluid flow though the opening. A second member (110) supports a central portion (302) of the closure member (100) against the pressure of the inflation fluid (222) in the chamber (220). Inflation fluid (222) flows through a passageway (270) defined by an outer perimeter of the second member (110) and the inner perimeter of the first member (82). An initiator (152) ruptures the closure member (100), forming petals (254) of the closure member that deflect into the passageway (270). The petals (254) slide along an outer surface (258) of a portion (132) of the second member (110) while deflecting into the passageway (270).

Abstract: An actuatable fastener (50) includes a body (80) including a head (82) and a shank (84). The body (80) includes an interior chamber (120) partially defined by a side wall (132) extending from the head (82) into the shank (84) and an end wall (138) positioned in the shank. A member (140) is disposed in the chamber (120). An initiator (160) is actuatable to produce combustion products in the chamber (120) that act on the member (140) to move the member in a first direction in the chamber to strike the end wall (138). The member (140) strikes the end wall (138) creating a fracture (222) in the shank (84) separating at least a portion of the shank from a remainder (220) of the shank. The combustion products moving the member (150) beyond the fracture (222) at least a predetermined distance (226) to move the portion of the shank (84) at least the predetermined distance from the remainder (220) of the shank.

Abstract: Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer.

Abstract: An inflator (40) for inflating an inflatable vehicle occupant protection device (14) includes structure that defines a chamber (220) and inflation fluid stored in the chamber. The inflation fluid includes in mixture a fuel gas, an oxidizer gas, and an inert gas mixture. The inflator (40) also includes an actuator for initiating a combustion reaction between the fuel gas and the oxidizer gas. The inert gas mixture includes at least two different inert gases and has a composition selected to produce desired performance characteristics of the inflator (40).

Abstract: A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.

Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.

Abstract: An actuatable fastener (50) includes a body (80) including a head (82) and a shank (84). The body (80) includes an interior chamber (120) partially defined by a side wall (132) extending from the head (82) into the shank (84) and an end wall (138) positioned in the shank. A member (140) is disposed in the chamber (120). An initiator (160) is actuatable to produce combustion products in the chamber (120) that act on the member (140) to move the member in a first direction in the chamber to strike the end wall (138). The member (140) strikes the end wall (138) creating a fracture (222) in the shank (84) separating at least a portion of the shank from a remainder (220) of the shank. The combustion products moving the member (150) beyond the fracture (222) at least a predetermined distance (226) to move the portion of the shank (84) at least the predetermined distance from the remainder (220) of the shank.

Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.