Patents by Inventor John Paul Aglubat

John Paul Aglubat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230195312
    Abstract: A memory device includes memory dies, each memory die including a memory array and control logic, operatively coupled with the memory array, to perform peak power management (PPM) operations. The PPM operations include causing a memory die to be placed in a suspended state to suspend execution of a first media access operation with a reserved current budget, receiving a set of requests to execute at least a second media access operation during the suspended state, and in response receiving the set of requests, handling the set of requests by implementing current budget arbitration logic with respect to the reserved current budget.
    Type: Application
    Filed: November 18, 2022
    Publication date: June 22, 2023
    Inventors: Liang Yu, Jonathan S. Parry, Fumin Gu, John Paul Aglubat
  • Patent number: 11681474
    Abstract: A portion of a memory management operation associated with a first current level that satisfies a condition pertaining to a threshold current level and a second current level that satisfies the condition pertaining to the threshold current level is identified. Mask data associated with the portion of the memory management operation is identified. Based on the mask data, a current management action is performed during execution of a requested memory management operation received from a host system.
    Type: Grant
    Filed: December 27, 2021
    Date of Patent: June 20, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Liang Yu, John Paul Aglubat, Fulvio Rori
  • Publication number: 20220121399
    Abstract: A portion of a memory management operation associated with a first current level that satisfies a condition pertaining to a threshold current level and a second current level that satisfies the condition pertaining to the threshold current level is identified. Mask data associated with the portion of the memory management operation is identified. Based on the mask data, a current management action is performed during execution of a requested memory management operation received from a host system.
    Type: Application
    Filed: December 27, 2021
    Publication date: April 21, 2022
    Inventors: Liang Yu, John Paul Aglubat, Fulvio Rori
  • Patent number: 11216219
    Abstract: A memory management operation is executed on a plurality of memory dies of a memory sub-system. The memory sub-system determines whether a first measured current level corresponding to execution of the memory management operation satisfies a condition pertaining to a threshold peak current level. The memory sub-system determines whether a second measured current level corresponding to execution of the memory management operation satisfies the condition pertaining to the threshold peak current level. Mask data is generated identifying the first measured current level and the second measured current level. A request is received from a host system to execute the memory management operation. The memory sub-system performs, based on the mask data, a peak current management action during execution of the memory management operation.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: January 4, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Liang Yu, John Paul Aglubat, Fulvio Rori
  • Publication number: 20210349663
    Abstract: A memory management operation is executed on a plurality of memory dies of a memory sub-system. The memory sub-system determines whether a first measured current level corresponding to execution of the memory management operation satisfies a condition pertaining to a threshold peak current level. The memory sub-system determines whether a second measured current level corresponding to execution of the memory management operation satisfies the condition pertaining to the threshold peak current level. Mask data is generated identifying the first measured current level and the second measured current level. A request is received from a host system to execute the memory management operation. The memory sub-system performs, based on the mask data, a peak current management action during execution of the memory management operation.
    Type: Application
    Filed: May 11, 2020
    Publication date: November 11, 2021
    Inventors: Liang Yu, John Paul Aglubat, Fulvio Rori