Abstract: The invention relates to a temperature distribution measuring apparatus for measuring a temperature distribution within an object caused by heating the object. A temperature distribution measuring unit (13, 71) measures the temperature distribution in a measurement region within the object, while the object is heated, and a temperature measurement control unit (22) controls the temperature distribution measuring unit such that the measurement region is modified depending on the measured temperature distribution, in order to measure different temperature distributions in different measurement regions.

Abstract: A II-VI semiconductor device has a p-doped quaternary ZnMgSSe layer formed of undoped sublayers and p-doped sublayers.

Abstract: A method of manufacturing iron garnet layers on a substrate, in a layer sequence of different order by means of RF-cathode sputtering in an inert gas plasma, using a target comprising predominantly an iron garnet phase in addition to residual phases having a substantially equal sputtering rate, the ions of said inert gas plasma bombarding the growing layer having an ion energy of less than 10.sup.2 eV and a pressure in the range from 0.1 to 2.0 Pa, in which method RF-power is fed into the target electrode (cathode) at a RF-voltage of approximately 200 V.sub.rms, thereby first depositing an amorphous to X-ray amorphous iron garnet layer as an intermediate layer at a substrate temperature below 460.degree. C. and, subsequently, a polycrystalline iron garnet layer at a substrate temperature exceeding 520.degree. C., while simultaneously applying a RF-voltage of approximately 50 V.sub.