Abstract: Various embodiments are disclosed for improved and structurally optimized transistors, such as RF power amplifier transistors. A transistor may include a drain metal portion raised from a surface of a substrate, a drain metal having a notched region, a gate manifold body with angled gate tabs extending from the gate manifold, and/or a source-connected shielding. The transistor may include a high-electron-mobility transistor (HEMT), a gallium nitride (GaN)-on-silicon transistor, a GaN-on-silicon-carbide transistor, or other type of transistor.

Abstract: Storage apparatus for combustible or explosive material, the apparatus comprising a substantially closed, heat-resistant container, an opening in a wall of the container to enable flow of quenching fluid into the container from an external supply of said quenching fluid, a valve which normally prevents flow of said quenching fluid into the container through the opening and detector means responsive to penetration of a wall of the container by a projectile or fragment and which, in the event of such penetration occurring, opens the valve to enable said quenching fluid to flow into the container through the opening, thereby controlling or preventing fire or explosion.