Patents by Inventor John R. Joseph

John R. Joseph has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of improving the fabrication of etched semiconductor devices
    Patent number: 6645848
    Abstract: This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: November 11, 2003
    Assignee: Emcore Corporation
    Inventors: John R. Joseph, Wenlin Luo, Kevin L. Lear, Robert P. Bryan
  • Method of improving the fabrication of etched semiconductor devices
    Publication number: 20020182848
    Abstract: This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad.
    Type: Application
    Filed: June 1, 2001
    Publication date: December 5, 2002
    Inventors: John R. Joseph, Wenlin Luo, Kevin L. Lear, Robert P. Bryan
  • Electron beam/optical hybrid lithographic resist process in acoustic wave devices
    Patent number: 4612274
    Abstract: A method is disclosed for using a combination of electron beam and photo lithography in making a acoustic wave device. The process is preformed by first using a positive photoresist and electron beam writing to designate the fine lines required in acoustic wave devices. Next, a second photoresist and optical lithography are used to delineate the pad areas.
    Type: Grant
    Filed: November 18, 1985
    Date of Patent: September 16, 1986
    Assignee: Motorola, Inc.
    Inventors: Frederick Y. Cho, John R. Joseph, Philip A. Seese
  • Footwear
    Patent number: D637384
    Type: Grant
    Filed: October 21, 2010
    Date of Patent: May 10, 2011
    Assignee: Columbia Sportswear North America, Inc.
    Inventor: John R. Joseph
  • Shoe upper
    Patent number: D410140
    Type: Grant
    Filed: April 30, 1997
    Date of Patent: May 25, 1999
    Assignee: FILA U.S.A., Inc.
    Inventor: John R. Joseph