Patents by Inventor John R. Trow
John R. Trow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20040237897Abstract: An electrostatically shielded toroidal plasma and radical source is provided. The plasma source includes a grounded metallic plasma source chamber that defines an interior for plasma generation. The plasma source chamber is configured from two L-shaped portions arranged to form rectangularly shaped enclosure. Dielectric breaks are defined by gaps between the two L-shaped portions. A drive inductor is configured such that the metallic plasma source chamber is positioned between loops of the drive inductor.Type: ApplicationFiled: May 27, 2003Publication date: December 2, 2004Inventors: Hiroji Hanawa, Kenneth S. Collins, John R. Trow, David Stover, Fernando Silveira
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Patent number: 6634313Abstract: An electrostatically shielded toroidal plasma and radical source is provided. The plasma source includes a grounded metallic plasma source chamber that defines an interior for plasma generation. The plasma source chamber is configured from two L-shaped portions arranged to form rectangularly shaped enclosure. Dielectric breaks are defined by gaps between the two L-shaped portions. A drive inductor is configured such that the metallic plasma source chamber is positioned between loops of the drive inductor.Type: GrantFiled: February 13, 2001Date of Patent: October 21, 2003Assignee: Applied Materials, Inc.Inventors: Hiroji Hanawa, Kenneth S. Collins, John R. Trow, David Stover, Fernando Silveira
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Patent number: 6545420Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: June 6, 1995Date of Patent: April 8, 2003Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Craig A. Roderick, John R. Trow, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Jay D. Pinson, II, Tetsuya Ishikawa, Lawrence Chang-Lai Lei, Masato M. Toshima
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Publication number: 20030029837Abstract: A method and a system for etching a substrate are disclosed. The substrate is disposed in a process chamber. A flow of precursor gas is introduced into the process chamber. An ionic plasma is then formed from the precursor gas in a plasma volume within the process chamber. A magnetic field is generated in the process chamber using magnetic sources disposed external to the plasma volume. The magnetic field divides the ionic plasma into a two regions, plasma within one region having a higher electron temperature than plasma within the other region. The low-electron temperature region is confined substantially above the substrate. Radicals are formed in this region for etching the substrate.Type: ApplicationFiled: August 10, 2001Publication date: February 13, 2003Applicant: Applied Materials, Inc.Inventor: John R. Trow
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Patent number: 6518195Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: February 15, 2000Date of Patent: February 11, 2003Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Craig A. Roderick, John R. Trow, Tetsuya Ishikawa, Jay D. Pinson, II, Lawrence Chang-Lai Lei, Masato M. Toshima, Gerald Zheyao Yin
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Patent number: 6488807Abstract: The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.Type: GrantFiled: May 3, 2000Date of Patent: December 3, 2002Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Craig A. Roderick, John R. Trow, Tetsuya Ishikawa, Jay D. Pinson, II, Lawrence Chang-Lai Lei, Masato M. Toshima, Gerald Zheyao Yin
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Publication number: 20020108713Abstract: An electrostatically shielded toroidal plasma and radical source is provided. The plasma source includes a grounded metallic plasma source chamber that defines an interior for plasma generation. The plasma source chamber is configured from two L-shaped portions arranged to form rectangularly shaped enclosure. Dielectric breaks are defined by gaps between the two L-shaped portions. A drive inductor is configured such that the metallic plasma source chamber is positioned between loops of the drive inductor.Type: ApplicationFiled: February 13, 2001Publication date: August 15, 2002Applicant: Applied Materials, Inc.Inventors: Hiroji Hanawa, Kenneth S. Collins, John R. Trow, David Stover, Fernando Silveira
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Publication number: 20020004309Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: ApplicationFiled: June 9, 1999Publication date: January 10, 2002Inventors: KENNETH S. COLLINS, CRAIG A. RODERICK, JOHN R. TROW, CHAN-LON YANG, JERRY YUEN-KUI WONG, JEFFREY MARKS, PETER R. KESWICK, DAVID W. GROECHEL, JAY D. PINSON, TETSUYA ISHIKAWA, LAWRENCE CHANG-LAI LEI, MASATO M. TOSHIMA
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Patent number: 6251792Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: October 10, 1997Date of Patent: June 26, 2001Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Craig A. Roderick, John R. Trow, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Jay D. Pinson, II, Tetsuya Ishikawa, Lawrence Chang-Lai Lei, Masato M. Toshima, Gerald Zheyao Yin
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Patent number: 6068784Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: April 1, 1993Date of Patent: May 30, 2000Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Craig A. Roderick, John R. Trow, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Jay D. Pinson, II, Tetsuya Ishikawa, Lawrence Chang-Lai Lei, Masato M. Toshima
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Patent number: 5583737Abstract: An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages.Type: GrantFiled: May 26, 1995Date of Patent: December 10, 1996Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, John R. Trow, Joshua Chiu-Wing Tsui, Craig A. Roderick, Nicolas J. Bright, Jeffrey Marks, Tetsuya Ishikawa, Jian Ding
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Patent number: 5556501Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: April 1, 1993Date of Patent: September 17, 1996Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Craig A. Roderick, John R. Trow, Chan-Lon Yang, Jerry Y. Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Jay D. Pinson, II, Tetsuya Ishikawa, Lawrence C. Lei, Masato M. Toshima, Gerald Z. Yin
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Patent number: 5539609Abstract: An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages.Type: GrantFiled: October 14, 1993Date of Patent: July 23, 1996Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, John R. Trow, Joshua C.-W. Tsui, Craig A. Roderick, Nicolas J. Bright, Jeffrey Marks, Tetsuya Ishikawa, Jian Ding
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Patent number: 5350479Abstract: An electrostatic chuck for holding an article to be processed in a plasma reaction chamber and comprising a metal pedestal coated with a layer of dielectric material in which is formed a cooling gas distribution system for passing and distributing a cooling gas between the upper surface of the layer and the article when supported on the pedestal. The gas distribution system comprises a plurality of intersecting grooves formed entirely in the upper surface of the layer with small gas distribution holes through intersections of the grooves over upper ends of cooling gas receiving holes formed in an underside of the pedestal.Type: GrantFiled: December 2, 1992Date of Patent: September 27, 1994Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, John R. Trow, Joshua C. W. Tsui, Craig A. Roderick, Nicolas J. Bright, Jeffrey Marks, Tetsuya Ishikawa
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Patent number: 5349313Abstract: A variable RF power splitter including three serially connected inductors (14, 15, 16) powered by an RF power source (11, 12). Two loads (17, 18), between which the RF power is to be split, are connected to ground from two different points in the inductance string. A variable reactance (19) connected to ground from another point in the inductance string controls the RF power splitting.Type: GrantFiled: October 22, 1993Date of Patent: September 20, 1994Assignee: Applied Materials Inc.Inventors: Kenneth S. Collins, John R. Trow, Craig A. Roderick
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Patent number: 5346579Abstract: A plasma etch reactor comprising a remote source of plasma mounted on a vacuum processing chamber has a large permanent magnet ring around the area of the chamber where the plasma enters, magnetically oriented so that magnetic field lines are removed from said plasma in the processing chamber, and two or more pairs of magnet rings mounted around said chamber to form a series of magnetic cusps about the wall of said chamber, to thereby inhibit plasma electrons from striking the wall of said chamber. A substrate entry port can be fitted between the magnet rings, allowing automatic ingress and egress of said substrates with maximum efficiency.Type: GrantFiled: July 19, 1993Date of Patent: September 13, 1994Assignee: Applied Materials, Inc.Inventors: Joel M. Cook, John R. Trow
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Patent number: 5187454Abstract: A method, and corresponding apparatus, for matching a generator impedance with an unknown and possibly changing load impedance, to maximize power transferred to the load. The apparatus includes an impedance matching network, and a network model, to estimate the load impedance from known present network values and a measurement of network input impedance, and to estimate optimum network values from the input impedance and the estimated load impedance. A controller computes new network values based on the present and optimum values, and outputs the new values to the network. The process is repeated using the new network values to estimate the load impedance and generate a new set of optimum values. The controller uses a control equation with parameters selected to ensure rapid convergence on the maximum-power condition, without overshoot or instability.Type: GrantFiled: January 23, 1992Date of Patent: February 16, 1993Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, John R. Trow, Craig A. Roderick, Jay D. Pinson, II, Douglas A. Buchberger, II