Patents by Inventor John S. Stanczak

John S. Stanczak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
    Patent number: 4408385
    Abstract: Resistor elements for MOS integrated circuits are made by an ion implant step compatible with a self-aligned N-channel silicon-gate process. The resistor elements are in a part of a polycrystalline silicon layer which is also used as a gate for an MOS transistor and as an interconnection overlying field oxide. Resistors of this type are ideally suited for load devices in static RAM cells.
    Type: Grant
    Filed: June 23, 1980
    Date of Patent: October 11, 1983
    Assignee: Texas Instruments Incorporated
    Inventors: G. R. Mohan Rao, John S. Stanczak, Jih-chang Lien, Shyam Bhatia
  • Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
    Patent number: 4208781
    Abstract: Resistor elements for MOS integrated circuits are made by an ion implant step compatible with a self-aligned N-channel silicon-gate process. The resistor elements are in a part of a polycrystalline silicon layer which is also used as a gate for an MOS transistor and as an interconnection overlying field oxide. Resistors of this type are ideally suited for load devices in static RAM cells.
    Type: Grant
    Filed: June 15, 1978
    Date of Patent: June 24, 1980
    Assignee: Texas Instruments Incorporated
    Inventors: G. R. Mohan Rao, John S. Stanczak, Jih-Chang Lien, Shyam Bhatia
  • Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
    Patent number: 4110776
    Abstract: Resistor elements for MOS integrated circuits are made by an ion implant step compatible with a self-aligned N-channel silicon-gate process. The resistor elements are in a part of a polycrystalline silicon layer which is also used as a gate for an MOS transistor and as an interconnection overlying field oxide. Resistors of this type are ideally suited for load devices in static RAM cells.
    Type: Grant
    Filed: September 27, 1976
    Date of Patent: August 29, 1978
    Assignee: Texas Instruments Incorporated
    Inventors: G. R. Mohan Rao, John S. Stanczak, Jih-Chang Lien, Shyam Bhatia