Abstract: A method for forming planar-waveguide Bragg grating in a curved waveguide comprises: forming a long chirped planar-waveguide Bragg grating in an Archimedes' spiral such that a long length of the waveguide can fit in a small chip area where the grating is formed in the curved waveguide; using periodic width modulation to form the planar-waveguide Bragg grating on the curved waveguide, and where the formation of the periodic width modulation occurs during the etching of the waveguide core; using rectangular width modulation to create Bragg gratings with a higher order than 1st order to allow a larger grating period and larger modulation depth, using waveguide width tapering while keeping the width modulation period constant to introduce chirp to the planar-waveguide Bragg grating where the index of refraction is a function of waveguide width, by applying a specific width tapering to create a desired arbitrary chirp profile.

Abstract: A Metal Nanoparticle Photonic Bandgap Device in SOI Method (NC#098884). The method includes providing a substrate having a semiconductor layer over an insulator layer, operatively coupling the substrate to a photonic bandgap structure having at least one period, wherein the photonic bandgap structure is adapted to receive and output light along a predetermined path, and operatively coupling the photonic bandgap structure and the substrate to a metal nanoparticle structure comprising at least three metal nanoparticles having spherical shapes of different radii, wherein the at least three metal nanoparticles are adapted to receive and amplify light rays and output amplified light.

Abstract: A Metal Nanoparticle Photonic Bandgap Device in SOI (NC#97882). The device includes a substrate having a semiconductor layer over an insulator layer; a photonic bandgap structure having at least one period operatively coupled to the substrate, adapted to receive and output amplified light along a predetermined path; a metal nanoparticle structure, operatively coupled to the photonic bandgap structure and the substrate, adapted to receive and amplify light rays and output amplified light.

Abstract: A 3D Photonic Bandgap Device in SOI (NC#98374). The structure includes a substrate having a semiconductor layer over an insulator layer and a 3D photonic bandgap structure having at least one period operatively coupled to the substrate. The apparatus has a funnel waveguide configuration.

Abstract: A 3D Photonic Bandgap Device in SOI Method (NC#97881). The method includes providing a substrate comprising a semiconductor layer over an insulator layer and fabricating a 3D photonic bandgap structure having at least one period over the substrate.

Abstract: A 3D Photonic Bandgap Device in SOI (NC#97719). The structure includes a substrate having a semiconductor layer over an insulator layer and a 3D photonic bandgap structure having at least one period operatively coupled to the substrate.