Patents by Inventor John T. Kinard

John T. Kinard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10522296
    Abstract: A capacitor, and method for making the capacitor, is provided with improved charging characteristics. The capacitor has an anode, a cathode comprising a conductive polymer layer and a work function modifier layer adjacent the conductive polymer layer and a dielectric layer between the anode and the cathode.
    Type: Grant
    Filed: January 2, 2019
    Date of Patent: December 31, 2019
    Assignee: KEMET Electronics Corporation
    Inventors: Antony P. Chacko, Yaru Shi, Robert Ramsbottom, John T. Kinard, John Joseph Ols
  • Publication number: 20190139709
    Abstract: A capacitor, and method for making the capacitor, is provided with improved charging characteristics. The capacitor has an anode, a cathode comprising a conductive polymer layer and a work function modifier layer adjacent the conductive polymer layer and a dielectric layer between the anode and the cathode.
    Type: Application
    Filed: January 2, 2019
    Publication date: May 9, 2019
    Inventors: Antony P. Chacko, Yaru Shi, Robert Ramsbottom, John T. Kinard, John Joseph Ols
  • Patent number: 10204743
    Abstract: A capacitor, and method for making the capacitor, is provided with improved charging characteristics. The capacitor has an anode, a cathode comprising a conductive polymer layer and a work function modifier layer adjacent the conductive polymer layer and a dielectric layer between the anode and the cathode.
    Type: Grant
    Filed: February 6, 2017
    Date of Patent: February 12, 2019
    Assignee: KEMET Electronics Corporation
    Inventors: Antony P. Chacko, Yaru Shi, Robert Ramsbottom, John T. Kinard, John Joseph Ols
  • Publication number: 20180226197
    Abstract: A capacitor, and method for making the capacitor, is provided with improved charging characteristics. The capacitor has an anode, a cathode comprising a conductive polymer layer and a work function modifier layer adjacent the conductive polymer layer and a dielectric layer between the anode and the cathode.
    Type: Application
    Filed: February 6, 2017
    Publication date: August 9, 2018
    Inventors: Antony P. Chacko, Yaru Shi, Robert Ramsbottom, John T. Kinard, John Joseph Ols
  • Publication number: 20180211790
    Abstract: An improved capacitor is provided wherein the improved capacitor has improved ESR. The capacitor has a fluted anode and an anode wire extending from the fluted anode. A dielectric is on the fluted anode. A conformal cathode is on the dielectric and a plated metal layer is on the carbon layer.
    Type: Application
    Filed: March 20, 2018
    Publication date: July 26, 2018
    Inventors: Randolph S. Hahn, Jeffrey Poltorak, Brandon Summey, Antony P. Chacko, John T. Kinard, Philip M. Lessner
  • Patent number: 9959979
    Abstract: An improved capacitor is provided wherein the improved capacitor has improved ESR. The capacitor has a fluted anode and an anode wire extending from the fluted anode. A dielectric is on the fluted anode. A conformal cathode is on the dielectric and a plated metal layer is on the carbon layer.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: May 1, 2018
    Assignee: KEMET Electronics Corporation
    Inventors: Randolph S. Hahn, Jeffrey Poltorak, Brandon Summey, Antony P. Chacko, John T. Kinard, Philip M. Lessner
  • Patent number: 9793058
    Abstract: A capacitor, and method for making the capacitor, is provided with improved charging characteristics. The capacitor has an anode, a cathode comprising a conductive polymer layer and a work function modifier layer adjacent the conductive polymer layer and a dielectric layer between the anode and the cathode.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: October 17, 2017
    Assignee: KEMET Electronics Corporation
    Inventors: Antony P. Chacko, Yaru Shi, Robert Ramsbottom, John T. Kinard, John Joseph Ols
  • Publication number: 20150348715
    Abstract: A capacitor, and method for making the capacitor, is provided with improved charging characteristics. The capacitor has an anode, a cathode comprising a conductive polymer layer and a work function modifier layer adjacent the conductive polymer layer and a dielectric layer between the anode and the cathode.
    Type: Application
    Filed: May 20, 2015
    Publication date: December 3, 2015
    Inventors: Antony P. Chacko, Yaru Shi, Robert Ramsbottom, John T. Kinard, John Joseph Ols
  • Patent number: 8982536
    Abstract: A capacitor with improved ESR and improved volumetric efficiency. The capacitor has an anode body wherein the anode body comprises a face and an inward offset which is inset from the face by a distance. An anode wire extends from a front side of the anode body wherein the front side is adjacent the face. A dielectric is on the anode body and a conductive cathode layer is on the dielectric. A cathode lead is in the inward offset and in electrical contact with the conductive cathode layer wherein the conductive cathode layer is between the cathode lead and the inward offset.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: March 17, 2015
    Assignee: Kemet Electronics Corporation
    Inventors: Joao Candeias, John T Kinard
  • Publication number: 20140233157
    Abstract: An improved capacitor is provided wherein the improved capacitor has improved ESR. The capacitor has a fluted anode and an anode wire extending from the fluted anode. A dielectric is on the fluted anode. A conformal cathode is on the dielectric and a plated metal layer is on the carbon layer.
    Type: Application
    Filed: February 19, 2014
    Publication date: August 21, 2014
    Inventors: Randolph S. Hahn, Jeffrey Poltorak, Brandon Summey, Antony P. Chacko, John T. Kinard, Philip M. Lessner
  • Publication number: 20140104757
    Abstract: A capacitor with improved ESR and improved volumetric efficiency. The capacitor has an anode body wherein the anode body comprises a face and an inward offset which is inset from the face by a distance. An anode wire extends from a front side of the anode body wherein the front side is adjacent the face. A dielectric is on the anode body and a conductive cathode layer is on the dielectric. A cathode lead is in the inward offset and in electrical contact with the conductive cathode layer wherein the conductive cathode layer is between the cathode lead and the inward offset.
    Type: Application
    Filed: October 12, 2012
    Publication date: April 17, 2014
    Inventors: Joao Candeias, John T. Kinard
  • Patent number: 7833292
    Abstract: An improved method for forming a capacitor. The method includes providing a carrier with a channel therein, providing a metal foil with a valve metal with a first dielectric on a first face of the metal foil, securing the metal foil into the channel with the first dielectric away from a channel floor, inserting an insulative material between the metal foil and each side wall of the channel, forming a cathode layer on the first dielectric between the insulative material, forming a conductive layer on the cathode layer and in electrical contact with the carrier, lap cutting the carrier parallel to the metal foil such that the valve metal is exposed, and dice cutting to form singulated capacitors.
    Type: Grant
    Filed: April 7, 2008
    Date of Patent: November 16, 2010
    Assignee: KEMET Electronics Corporation
    Inventors: Keith R. Brenneman, Chris Wayne, Chris Stolarski, John T Kinard, Alethia Melody, Gregory J. Dunn, Remy J. Chelini, Robert T. Croswell
  • Publication number: 20100177460
    Abstract: An improved method for forming a capacitor. The method includes: providing a carrier with a channel therein; providing a metal foil with a valve metal with a first dielectric on a first face of the metal foil; securing the metal foil into the channel with the first dielectric away from a channel floor; inserting an insulative material between the metal foil and each side wall of the channel; forming a cathode layer on the first dielectric between the insulative material; forming a conductive layer on the cathode layer and in electrical contact with the carrier; lap cutting the carrier parallel to the metal foil such that the valve metal is exposed; and dice cutting to form singulated capacitors.
    Type: Application
    Filed: March 18, 2010
    Publication date: July 15, 2010
    Inventors: Keith R. Brenneman, Chris Wayne, Chris Stolarski, John T. Kinard, Alethia Melody, Gregory J. Dunn, Remy J. Chelini, Robert T. Croswell
  • Patent number: 7745281
    Abstract: An improved method for forming a capacitor. The method includes the steps of: providing a metal foil; forming a dielectric on the metal foil; applying a non-conductive polymer dam on the dielectric to isolate discrete regions of the dielectric; forming a cathode in at least one discrete region of the discrete regions on the dielectric; and cutting the metal foil at the non-conductive polymer dam to isolate at least one capacitor comprising one cathode, one discrete region of the dielectric and a portion of the metal foil with the discrete region of the dielectric.
    Type: Grant
    Filed: February 14, 2008
    Date of Patent: June 29, 2010
    Assignees: Kemet Electronics Corporation, Motorola, Inc.
    Inventors: John D. Prymak, Chris Stolarski, David Jacobs, Chris Wayne, Philip Lessner, John T. Kinard, Alethia Melody, Gregory Dunn, Robert T. Croswell, Remy J. Chelini
  • Publication number: 20080273291
    Abstract: An improved method for forming a capacitor. The method includes: providing a carrier with a channel therein; providing a metal foil with a valve metal with a first dielectric on a first face of the metal foil; securing the metal foil into the channel with the first dielectric away from a channel floor; inserting an insulative material between the metal foil and each side wall of the channel; forming a cathode layer on the first dielectric between the insulative material; forming a conductive layer on the cathode layer and in electrical contact with the carrier; lap cutting the carrier parallel to the metal foil such that the valve metal is exposed; and dice cutting to form singulated capacitors.
    Type: Application
    Filed: April 7, 2008
    Publication date: November 6, 2008
    Inventors: Keith R. Brenneman, Chris Wayne, Chris Stolarski, John T. Kinard, Alethia Melody, Gregory J. Dunn, Remy J. Chellni, Robert T. Croswell
  • Publication number: 20080216296
    Abstract: An improved method for forming a capacitor. The method includes the steps of: providing a metal foil; forming a dielectric on the metal foil; applying a non-conductive polymer dam on the dielectric to isolate discrete regions of the dielectric; forming a cathode in at least one discrete region of the discrete regions on the dielectric; and cutting the metal foil at the non-conductive polymer dam to isolate at least one capacitor comprising one cathode, one discrete region of the dielectric and a portion of the metal foil with the discrete region of the dielectric.
    Type: Application
    Filed: February 14, 2008
    Publication date: September 11, 2008
    Inventors: John D. Prymak, Chris Stolarski, David Jacobs, Chris Wayne, Philip Lessner, John T. Kinard, Alethia Melody, Gregory Dunn, Robert T. Croswell, Remy J. Chelini
  • Publication number: 20080123251
    Abstract: A process for forming a capacitive couple. The process includes forming a highly porous body of a conducting material with interior struts and voids in electrical contact. A dielectric layer is formed in the voids on the struts with a material having a dielectric constant above 100. An insulating layer is formed on the struts not covered by the dielectric layer. A conductive layer is formed on the dielectric layer and on the insulating layer.
    Type: Application
    Filed: November 28, 2006
    Publication date: May 29, 2008
    Inventors: Michael S. Randall, Peter Blais, Pascal Pinceloup, Daniel J. Skamser, Abhijit Gurav, Azizuddin Tajuddin, John T. Kinard, Philip Lessner
  • Patent number: 7348194
    Abstract: An improved capacitor with an anode with an anode wire and an oxide layer on the surface of the anode. A cathode layer is exterior to the oxide layer. A carbon conductive layer is exterior to the cathode layer wherein the cathode layer comprises 5-75 wt % resin and 25-95 wt % conductor. The conductor has carbon nanotubes. An anode lead is in electrical contact with the anode wire and a cathode lead is in electrical contact with the carbon conductive layer.
    Type: Grant
    Filed: May 14, 2007
    Date of Patent: March 25, 2008
    Assignee: Kemet Electronics Corporation
    Inventors: Antony P. Chacko, Qingping Chen, Randy S. Hahn, John T. Kinard, Philip M. Lessner, Anita Melody, legal representative, Brian J. Melody
  • Patent number: 7154742
    Abstract: An anode with narrow flutes (<0.3 mm) allows for the improved penetration of cathode solutions into the anode body and reduces the redistribution which occurs as the solutions are converted to the solid cathode material.
    Type: Grant
    Filed: May 10, 2006
    Date of Patent: December 26, 2006
    Assignee: Kemet Electronics Corporation
    Inventors: Randy S. Hahn, John T. Kinard, Jeffery P. Poltorak, Eric Zediak
  • Patent number: 6849134
    Abstract: A pyrolysis oven provides uniform pyrolytic coatings on capacitor anodes. An oven chamber contains cross-flow blowers situated to provide uniform laminar flow of oven atmosphere over the objects to be treated. The top and side walls of the chamber meet in an inverted V such that when the blower operate, a vortex is created in the inverted V in the chamber.
    Type: Grant
    Filed: September 10, 2001
    Date of Patent: February 1, 2005
    Assignee: Kemet Electronics Corporation
    Inventors: John D. Henley, Brian J. Melody, John T. Kinard, Randolph S. Hahn