Patents by Inventor John T. Torvik

John T. Torvik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating self-aligned silicon carbide semiconductor devices
    Patent number: 7508000
    Abstract: Methods of constructing silicon carbide semiconductor devices in a self-aligned manner. According to one aspect of the invention, the method may include forming a mesa structure in a multi-layer laminate including at least a first and second layer of silicon carbide material. The mesa structure may then be utilized in combination with at least one planarization step to construct devices in a self-aligned manner. According to another aspect of the present invention, the mesa structure may be formed subsequent to an ion implantation and anneal steps to construct devices in a self-aligned manner. According to another aspect of the present invention, a high temperature mask capable of withstanding the high temperatures of the anneal process may be utilized to form devices in a self-aligned manner.
    Type: Grant
    Filed: November 24, 2004
    Date of Patent: March 24, 2009
    Assignee: Microsemi Corporation
    Inventors: Bart J. Van Zeghbroeck, John T. Torvik
  • Wide bandgap semiconductor device construction
    Patent number: 7241699
    Abstract: The invention includes methods for precisely and accurately etching layers of wide bandgap semiconductor material. According to one aspect of the invention, the method includes providing a multi-layer laminate including at least a first and second layer of wide bandgap semiconductor material, measuring a first conductance of the first layer of semiconductor material, partially etching the first layer of semiconductor material a first amount, measuring a second conductance of the first layer of semiconductor material etched the first amount, and utilizing the first and second measured conductance to determine a time required to etch the first layer of semiconductor material a second amount.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: July 10, 2007
    Assignee: Microsemi Corp.
    Inventors: Bart J. Van Zeghbroeck, Ivan Perez, John T. Torvik
  • Silicon carbide semiconductor devices with a regrown contact layer
    Patent number: 6982440
    Abstract: Silicon carbide semiconductor devices having regrown layers and methods of fabricating the same in a self-aligned manner. According to one aspect of the invention, the method includes growing at least one layer of silicon carbide on a substrate, removing the device from a growth chamber to perform at least one processing step, and regrowing another layer of silicon carbide on the at least one layer. According to one embodiment of the invention, the regrown layer may be a heavily doped contact layer for the formation of low resistivity ohmic contacts.
    Type: Grant
    Filed: January 9, 2003
    Date of Patent: January 3, 2006
    Assignee: PowerSicel, Inc.
    Inventors: Bart J. Van Zeghbroeck, John T. Torvik
  • Method of fabricating self-aligned silicon carbide semiconductor devices
    Patent number: 6764907
    Abstract: Methods of constructing silicon carbide semiconductor devices in a self-aligned manner. According to one aspect of the invention, the method may include forming a mesa structure in a multi-layer laminate including at least a first and second layer of silicon carbide material. The mesa structure may then be utilized in combination with at least one planarization step to construct devices in a self-aligned manner. According to another aspect of the present invention, the mesa structure may be formed subsequent to an ion implantation and anneal steps to construct devices in a self-aligned manner. According to another aspect of the present invention, a high temperature mask capable of withstanding the high temperatures of the anneal process may be utilized to form devices in a self-aligned manner.
    Type: Grant
    Filed: February 7, 2003
    Date of Patent: July 20, 2004
    Inventors: Bart J. Van Zeghbroeck, John T. Torvik
  • Silicon carbide semiconductor devices with a regrown contact layer
    Publication number: 20030157745
    Abstract: Silicon carbide semiconductor devices having regrown layers and methods of fabricating the same in a self-aligned manner. According to one aspect of the invention, the method includes growing at least one layer of silicon carbide on a substrate, removing the device from a growth chamber to perform at least one processing step, and regrowing another layer of silicon carbide on the at least one layer. According to one embodiment of the invention, the regrown layer may be a heavily doped contact layer for the formation of low resistivity ohmic contacts.
    Type: Application
    Filed: January 9, 2003
    Publication date: August 21, 2003
    Inventors: Bart J. Van Zeghbroeck, John T. Torvik
  • Method of fabricating self-aligned silicon carbide semiconductor devices
    Publication number: 20030157777
    Abstract: Methods of constructing silicon carbide semiconductor devices in a self-aligned manner. According to one aspect of the invention, the method may include forming a mesa structure in a multi-layer laminate including at least a first and second layer of silicon carbide material. The mesa structure may then be utilized in combination with at least one planarization step to construct devices in a self-aligned manner. According to another aspect of the present invention, the mesa structure may be formed subsequent to an ion implantation and anneal steps to construct devices in a self-aligned manner. According to another aspect of the present invention, a high temperature mask capable of withstanding the high temperatures of the anneal process may be utilized to form devices in a self-aligned manner.
    Type: Application
    Filed: February 7, 2003
    Publication date: August 21, 2003
    Inventors: Bart J. Van Zeghbroeck, John T. Torvik