Abstract: Apparatus and method for stabilizing and supporting a crystal semiconductor rod during fabrication refining from the action of a seed rod on a float zone melt of a crystalline rod source is provided wherein engageable fingers mounted in a vertically movable tube in axial register with the shaft holding the crystal seed rod are pivotally mounted in a non-horizontal upward position, the finger tips being force loaded for inward movement upon removal of a sleeve carrier so that the fingers engage, support, and stabilize the irregular cylindrical surface of the refined semiconductor rod. The tube and fingers are engageable through sleeve and tube piston means resulting in uniform stabilization and support of the crystal refined rod. The apparatus and method prevent the refined rod from vibrating and oscillating about its axis; thus allowing enlarged dislocation free crystal rod growth from a crystalline rod source, said refined crystal rod being grown on a slender seed rod.

Abstract: Improvements in apparatus for zone refining polycrystalline semiconductor rods to produce monocrystalline semiconductor rods are disclosed. In the apparatus, an inductive heating chamber is employed which has a longitudinal dimension independent of the length of the polycrystalline semiconductor rod to be processed. The longitudinal dimension of the induction heating chamber is limited only by considerations of the space required for the RF induction heating coil and related apparatus which must be mounted within the chamber, the viewing space required for the operator to observe the zone refining process, and the heating effect on the structures above and below the chamber. First and second gas tight bellows are provided which, respectively, surround the rod holder and the seed holder.

Abstract: Improvements in apparatus for zone refining polycrystalline semiconductor rods to produce monocrystalline semiconductor rods are disclosed. In the apparatus, an inductive heating chamber is employed which has a longitudinal dimension independent of the length of the polycrystalline semiconductor rod to be processed. The longitudinal dimension of the induction heating chamber is limited only by considerations of the space required for the RF induction heating coil and related apparatus which must be mounted within the chamber, the viewing space required for the operator to observe the zone refining process, and the heating effect on the structures above and below the chamber. First and second gas tight bellows are provided which, respectively, surround the rod holder and the seed holder.