Patents by Inventor John W. Jackson, Jr.

John W. Jackson, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12008213
    Abstract: Technologies for computing context replay include a computing device having a persistent memory and a volatile memory. The computing device creates multiple snapshots that are each indicative of a user's computing context at a corresponding sync point. The snapshots may include metadata created in response to system events, memory snapshots stored in a virtual machine, and/or video data corresponding to the computing context. At least a part of the snapshots are stored in the persistent memory. The computing device presents a timeline user interface based on the snapshots. The timeline includes multiple elements that are associated with corresponding sync points. The timeline elements may visually indicate a salience value that has been determined for each corresponding sync point. In response to a user selection of a sync point, the computing device activates a computing context corresponding to the snapshot for the selected sync point. Other embodiments are described and claimed.
    Type: Grant
    Filed: August 16, 2021
    Date of Patent: June 11, 2024
    Assignee: Intel Corporation
    Inventors: Glen J. Anderson, Jose K. Sia, Jr., Dawn Nafus, Carl S. Marshall, Jeffrey R. Jackson, Heather Patterson, John W. Sherry, Daniel S. Lake
  • Patent number: 4472728
    Abstract: An X-ray spectrometer for providing imaging and energy resolution of an X-ray source comprised of a thick silicon wafer (10) having an embedded matrix or grid of aluminum completely through the wafer fabricated, for example, by thermal migration. The aluminum matrix defines the walls (16, 18) of a rectangular array of silicon X-ray detector cells (14) or "pixels". A thermally diffused aluminum electrode (20) is also formed centrally through each of the silicon cells (14) with biasing means (22, 26, 28) being connected to the aluminum cell walls (16, 18) and the centralized aluminum electrode (20) for causing lateral charge carrier depletion between the cell walls so that incident X-ray energy causes a photo-electric reaction within the silicon producing collectible charge carriers in the form of electrons which are collected and used for imaging.
    Type: Grant
    Filed: February 19, 1982
    Date of Patent: September 18, 1984
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Patrick A. Grant, John W. Jackson, Jr., George E. Alcorn, Francis E. Marshall