Patents by Inventor Johnathan Edmonds

Johnathan Edmonds has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7028234
    Abstract: A method of self-repair for a DRAM integrated circuit includes internally generating a bit pattern and writing the pattern to an array of memory cells within the integrated circuit. The DRAM integrated circuit reads from the array and internally compares the read data with the generated pattern to determine addresses for failed memory cells. The DRAM integrated circuit sets internal soft fuses that record the addresses of the failed memory cells and provide substitute memory cells for the failed memory cells from a redundant memory portion of the array. The self-repair process occurs each time the DRAM integrated circuit is powered up, thus permitting the integrated circuit to adapt to failures when installed in electronic devices and lessening the need for repair during manufacturing.
    Type: Grant
    Filed: September 27, 2002
    Date of Patent: April 11, 2006
    Assignee: Infineon Technologies AG
    Inventors: Jennifer F. Huckaby, Torsten Partsch, Johnathan Edmonds, Leonel R. Nino
  • Publication number: 20050122832
    Abstract: The present invention relates to a method of operating a memory system comprising a memory chip. An operating signal is generated at an operating frequency. The operating frequency is applied to the memory chip to control one or more electrical components of the memory system. A reference signal is generated at a reference frequency within the memory chip and a range of values for the operating frequency is detected based on the reference signal and the operating signal.
    Type: Application
    Filed: January 25, 2005
    Publication date: June 9, 2005
    Inventors: Torsten Partsch, Jennifer Huckaby, Johnathan Edmonds, Tao Tian
  • Patent number: 6847911
    Abstract: A method of throttling the frequency with which an integrated circuit is accessed includes sensing the temperature of the integrated circuit die and converting the sensed temperature to a digital signal. The digital signal is stored in a register of the integrated circuit. The digital signal is read, and the frequency with which the integrated circuit is accessed is adjusted dependent at least in part upon the temperature of the die as indicated by the digital signal.
    Type: Grant
    Filed: August 2, 2002
    Date of Patent: January 25, 2005
    Assignee: Infineon Technologies AG
    Inventors: Jennifer Faye Huckaby, Torsten Partsch, Johnathan Edmonds
  • Patent number: 6748183
    Abstract: A system includes a printer having at least one container for storing a consumable and a monitor for monitoring the status of the consumable in the at least one container; a host device for sending a print job to the printer, wherein the host device includes a display; and a printer driver for controlling operation of the printer from the host device, for querying the printer for consumable status information, and for providing a user interface in the host device display; wherein the printer driver, responsive to the print job, queries the printer for consumable status information and displays the status of the consumable in the at least one container in the printer in the user interface.
    Type: Grant
    Filed: February 22, 2002
    Date of Patent: June 8, 2004
    Assignee: Xerox Corporation
    Inventor: Johnathan A. Edmonds
  • Publication number: 20040064767
    Abstract: A method of self-repair for a DRAM integrated circuit includes internally generating a bit pattern and writing the pattern to an array of memory cells within the integrated circuit. The DRAM integrated circuit reads from the array and internally compares the read data with the generated pattern to determine addresses for failed memory cells. The DRAM integrated circuit sets internal soft fuses that record the addresses of the failed memory cells and provide substitute memory cells for the failed memory cells from a redundant memory portion of the array. The self-repair process occurs each time the DRAM integrated circuit is powered up, thus permitting the integrated circuit to adapt to failures when installed in electronic devices and lessening the need for repair during manufacturing.
    Type: Application
    Filed: September 27, 2002
    Publication date: April 1, 2004
    Applicant: INFINEON TECHNOLOGIES NORTH AMERICA CORP.
    Inventors: Jennifer F. Huckaby, Torsten Partsch, Johnathan Edmonds, Leonel R. Nino
  • Publication number: 20040024561
    Abstract: A method of throttling the frequency with which an integrated circuit is accessed includes sensing the temperature of the integrated circuit die and converting the sensed temperature to a digital signal. The digital signal is stored in a register of the integrated circuit. The digital signal is read, and the frequency with which the integrated circuit is accessed is adjusted dependent at least in part upon the temperature of the die as indicated by the digital signal.
    Type: Application
    Filed: August 2, 2002
    Publication date: February 5, 2004
    Inventors: Jennifer Faye Huckaby, Torsten Partsch, Johnathan Edmonds