Abstract: Provided herein include various examples of a method for manufacturing aspects of an apparatus, a sensor system. The method may include obtaining a first carrier bonded to an upper surface of the silicon wafer. This wafer includes through silicon vias (TSVs) extended through openings in a passivation stack, with electrical contacts coupled to portions of the TSVs exposed through these openings. The method may include de-bonding the first carrier from the upper surface of the silicon wafer. The method may include dicing the silicon wafer into subsections comprising dies.

Abstract: Provided herein include various examples of a flow cell and methods for forming aspects of flow cell. The method may include applying a first adhesive to a substrate. The method may include orienting a die on the first adhesive. The method may also include orienting a package on the first adhesive. The package includes a die and a top surface of the die comprises an active surface and electrical contact points. Surfaces adjacent to the active surface on at least two opposing sides of the active surface form fanout regions for utilization in a fluidic path of the flow cell. The method further may include applying a second adhesive to a part of the package and attaching a lid to the second adhesive to define a fluidic flow-cell cavity below the lid and above a surface comprising the active surface and the fanout regions.

Abstract: Provided herein include various examples of a method for manufacturing aspects of flow cell. The method may include performing chemical processes on a surface of the patterned wafer to prepare the surface of the patterned, singulating the wafer into individual dies, orienting each die on a temporary substrate, where the orienting creates spaces between each individual die, and molding a material over the spaces to create a hybrid wafer comprised of glass and molded material. The method may also include bonding two of the hybrid wafers together, forming a bonded wafer stack.

Abstract: Provided herein include various examples of a method for manufacturing aspects of an apparatus, a sensor system. The method may include obtaining a first carrier bonded to an upper surface of the silicon wafer. This wafer includes through silicon vias (TSVs) extended through openings in a passivation stack, with electrical contacts coupled to portions of the TSVs exposed through these openings. The method may include de-bonding the first carrier from the upper surface of the silicon wafer. The method may include dicing the silicon wafer into subsections comprising dies.

Abstract: Some implementations provide a semiconductor device (e.g., die, wafer) that includes a substrate, that is configured with trenches that are dry-etched into a surface of the substrate inside an area defined by scribe lines of the substrate. A crack stop structure is provided for the semiconductor device that includes a polymer dielectric layer coating that fills the trenches with a polymer dielectric material and provides a dielectric layer over the surface of the substrate inside the area. The polymer dielectric layer coating and trenches are configured to reduce cracking or chipping of the substrate in the area defined by scribe lines after cutting.