Patents by Inventor Jon M. McChesney

Jon M. McChesney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma chamber support with coupled electrode
    Patent number: 6494958
    Abstract: A process chamber 110 capable of processing a substrate 30 in a plasma of process gas. The chamber 110 comprises a support 200 having a dielectric 210 covering an electrode 220 and a conductor 230 below the electrode 220. A voltage supply 180 supplies a gas energizing voltage to the conductor 220, and the conductor is adapted to capacitively couple the voltage to the electrode 220 to energize the process gas. Alternatively, the voltage may be supplied to the electrode 220 through a connector 195 which can capacitively couple with the conductor 230. A DC power supply 190 may also provide an electrostatic chucking voltage to the electrode 220. In one version, the conductor 230 comprises an interposer 280.
    Type: Grant
    Filed: June 29, 2000
    Date of Patent: December 17, 2002
    Assignee: Applied Materials Inc.
    Inventors: Shamouil Shamouilian, Jon M. McChesney, Kwok Manus Wong, Liang-Guo Wang, Alexander M. Veytser, Dennis S. Grimard