Patents by Inventor Jon N. Kuznia

Jon N. Kuznia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a high electron mobility transistor
    Patent number: 5296395
    Abstract: A high electron mobility transistor is disclosed, which takes advantage of the increased mobility due to a two dimensional electron gas occurring in GaN/Al.sub.x Ga.sub.1-x N heterojunctions. These structures are deposited on basal plane sapphire using low pressure metalorganic chemical vapor deposition. The electron mobility of the heterojunction is approximately 620 cm.sup.2 per volt second at room temperature as compared to 56 cm.sup.2 per volt second for bulk GaN of the same thickness deposited under identical conditions. The mobility of the bulk sample peaked at 62 cm.sup.2 per volt second at 180.degree. K. and decreased to 19 cm.sup.2 per volt second at 77.degree. K. The mobility for the heterostructure, however, increased to a value of 1,600 cm.sup.2 per volt second at 77.degree. K. and saturated at 4.degree. K.
    Type: Grant
    Filed: March 3, 1993
    Date of Patent: March 22, 1994
    Assignee: APA Optics, Inc.
    Inventors: Muhammad A. Khan, James M. VanHove, Jon N. Kuznia, Donald T. Olson
  • High responsivity ultraviolet gallium nitride detector
    Patent number: 5278435
    Abstract: The invention is an Al.sub.x Ga.sub.1-x N ultraviolet detector with extremely high responsivity at over 200 to 365 nanometers and a very sharp long wavelength cutoff. The active layer for the sensors is a single crystal Al.sub.x Ga.sub.1-x N preferably deposited over a basal plane sapphire substrate using a switched atomic layer epitaxy process.
    Type: Grant
    Filed: June 8, 1992
    Date of Patent: January 11, 1994
    Assignee: APA Optics, Inc.
    Inventors: James M. Van Hove, Jon N. Kuznia, Donald T. Olson, Muhammad A. Kahn, Margaret C. Blasingame
  • High electron mobility transistor with GaN/Al.sub.x Ga.sub.1-x N heterojunctions
    Patent number: 5192987
    Abstract: A high electron mobility transistor is disclosed, which takes advantage of the increased mobility due to a two dimensional electron gas occurring in GaN/Al.sub.x Ga.sub.1-x N heterojunctions. These structures are deposited on basal plane sapphire using low pressure metalorganic chemical vapor deposition. The electron mobility of the heterojunction is aproximately 620 cm.sup.2 per volt second at room temperature as compared to 56 cm.sup.2 per volt second at 180.degree. K. and decreased to 19 cm.sup.2 per volt second at 77.degree. K. The mobility for the heterostructure, however, increased to a value of 1,600 cm.sup.2 per volt second at 77.degree. K. and saturated at 4.degree. K.
    Type: Grant
    Filed: May 17, 1991
    Date of Patent: March 9, 1993
    Assignee: APA Optics, Inc.
    Inventors: Muhammed A. Khan, James M. VanHove, Jon N. Kuznia, Donald T. Olson