Patents by Inventor Jonathan B. Hacker
Jonathan B. Hacker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9105604Abstract: A cascode gain stage apparatus includes a common-emitter connected transistor having a first base metal contact, first emitter metal contact, a first collector metal contact and a u-shaped first collector interface metal; and a common-base connected transistor having a second emitter metal contact, a second base metal contact, and a second collector metal contact, the second emitter metal contact in communication with the first collector metal contact through a transistor interconnect metallic strap, the second emitter metal contact disposed between the first collector metal contact and the second base metal contact. With this configuration, the first collector metal contact and second emitter metal contact are connected by the transistor interconnect metallic strap without high-aspect ratio traces to reduce crossover coupling.Type: GrantFiled: January 6, 2014Date of Patent: August 11, 2015Assignee: Teledyne Scientific & Imaging, LLCInventor: Jonathan B. Hacker
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Publication number: 20150194407Abstract: A cascode gain stage apparatus includes a common-emitter connected transistor having a first base metal contact, first emitter metal contact, a first collector metal contact and a u-shaped first collector interface metal; and a common-base connected transistor having a second emitter metal contact, a second base metal contact, and a second collector metal contact, the second emitter metal contact in communication with the first collector metal contact through a transistor interconnect metallic strap, the second emitter metal contact disposed between the first collector metal contact and the second base metal contact. With this configuration, the first collector metal contact and second emitter metal contact are connected by the transistor interconnect metallic strap without high-aspect ratio traces to reduce crossover coupling.Type: ApplicationFiled: January 6, 2014Publication date: July 9, 2015Applicant: Teledyne Scientific & Imaging, LLCInventor: Jonathan B. Hacker
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Patent number: 8697499Abstract: A dynamic and end-user configurable controlled impedance interconnect line includes a plurality of conductive pixels, a plurality of thin-film transition material interconnects to electrically connect adjacent conductive pixels in the plurality of conductive pixels, and a plurality of addressable pixel interconnect actuators to selectively heat a respective plurality of the thin-film transition material interconnects. The plurality of addressable pixel interconnect actuators is operable to selectively heat a respective plurality of the thin-film transition material interconnects to form an interconnect line.Type: GrantFiled: May 30, 2013Date of Patent: April 15, 2014Assignee: Teledyne Scientific & Imaging, LLCInventors: Jonathan B. Hacker, Christopher E. Hillman
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Publication number: 20130260514Abstract: A dynamic and end-user configurable controlled impedance interconnect line includes a plurality of conductive pixels, a plurality of thin-film transition material interconnects to electrically connect adjacent conductive pixels in the plurality of conductive pixels, and a plurality of addressable pixel interconnect actuators to selectively heat a respective plurality of the thin-film transition material interconnects. The plurality of addressable pixel interconnect actuators is operable to selectively heat a respective plurality of the thin-film transition material interconnects to form an interconnect line.Type: ApplicationFiled: May 30, 2013Publication date: October 3, 2013Inventors: Jonathan B. Hacker, Christopher E. Hillman
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Patent number: 8476679Abstract: A dynamic and end-user configurable controlled impedance interconnect line includes a plurality of conductive pixels, a plurality of thin-film transition material interconnects to electrically connect adjacent conductive pixels in the plurality of conductive pixels, and a plurality of addressable pixel interconnect actuators to selectively heat a respective plurality of the thin-film transition material interconnects. The plurality of addressable pixel interconnect actuators is operable to selectively heat a respective plurality of the thin-film transition material interconnects to form an interconnect line.Type: GrantFiled: January 28, 2011Date of Patent: July 2, 2013Assignee: Teledyne Scientific & Imaging, LLCInventors: Jonathan B. Hacker, Christopher E. Hillman
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Publication number: 20120193682Abstract: A dynamic and end-user configurable controlled impedance interconnect line includes a plurality of conductive pixels, a plurality of thin-film transition material interconnects to electrically connect adjacent conductive pixels in the plurality of conductive pixels, and a plurality of addressable pixel interconnect actuators to selectively heat a respective plurality of the thin-film transition material interconnects. The plurality of addressable pixel interconnect actuators is operable to selectively heat a respective plurality of the thin-film transition material interconnects to form an interconnect line.Type: ApplicationFiled: January 28, 2011Publication date: August 2, 2012Inventors: Jonathan B. Hacker, Christopher E. Hillman
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Patent number: 8067996Abstract: A vanadium dioxide front-end advanced shutter device. The electronic shutter device is designed to protect receiver front-ends and other sensitive circuits from HPM pulse events such as HPM weapons, directed energy weapons, or EMPs. The shutter incorporates a transition material such as thin-film vanadium oxide (VOX) materials that exhibit a dramatic change in resistivity as their temperature is varied over a narrow range near a known critical temperature. A high-energy pulse causes ohmic heating in the shutter device, resulting in a state change in the VOX material when the critical temperature is exceeded. During the state change the VOX material transitions from an insulating state (high resistance) to a reflective state (low resistance). In the insulating state, the shutter device transmits the majority of the signal. In the reflective state, most of the signal is reflected and prevented from passing into electronics on the output side of the shutter device.Type: GrantFiled: November 14, 2008Date of Patent: November 29, 2011Assignee: Teledyne Scientific & Imaging, LLCInventors: Christopher E. Hillman, Jeffrey F. De Natale, Jonathan B. Hacker, J. Aiden Higgins, Paul H. Kobrin
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Publication number: 20110089531Abstract: A system is disclosed for IC fabrication, including seating an integrated circuit (“IC”) having at least one contact into a recess of a silicon interposer substrate, applying an insulator in liquid form to fill portions of the recess not otherwise occupied by the IC and to cover a top surface of the IC and the silicon interposer substrate, introducing the insulator to a ramped environmental temperature, holding the environmental temperature at a reflow temperature to reflow the insulator and ramping down the environmental temperature to cure the insulator.Type: ApplicationFiled: October 1, 2010Publication date: April 21, 2011Inventors: Christopher E. Hillman, Jonathan B. Hacker, Wonill Ha, Scott Newell, Lan Tran
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Publication number: 20100123532Abstract: A vanadium dioxide front-end advanced shutter device. The electronic shutter device is designed to protect receiver front-ends and other sensitive circuits from HPM pulse events such as HPM weapons, directed energy weapons, or EMPs. The shutter incorporates a transition material such as thin-film vanadium oxide (VOX) materials that exhibit a dramatic change in resistivity as their temperature is varied over a narrow range near a known critical temperature. A high-energy pulse causes ohmic heating in the shutter device, resulting in a state change in the VOX material when the critical temperature is exceeded. During the state change the VOX material transitions from an insulating state (high resistance) to a reflective state (low resistance). In the insulating state, the shutter device transmits the majority of the signal. In the reflective state, most of the signal is reflected and prevented from passing into electronics on the output side of the shutter device.Type: ApplicationFiled: November 14, 2008Publication date: May 20, 2010Inventors: Christopher E. Hillman, Jeffrey F. De Natale, Jonathan B. Hacker, J. Aiden Higgins, Paul H. Kobrin
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Patent number: 7157993Abstract: A 1:N MEM switch module comprises N MEM switches fabricated on a common substrate, each of which has input and output contacts and a movable contact which bridges the input and output contacts when the switch is actuated. The input contacts are connected to a common input node, and the output contacts are connected to respective output lines. Each output line has an associated inductance and effective capacitance, and is arranged such that its inductance is matched to its effective capacitance. The switches are preferably arranged symmetrically about the terminus point of the signal input line. A phase shifter employs at least two switch modules connected together with N transmission lines having different lengths, operated such that an input signal is routed via one of the transmission lines to effect a desired phase-shift.Type: GrantFiled: September 30, 2003Date of Patent: January 2, 2007Assignee: Rockwell Scientific Licensing, LLCInventors: Jeffrey F. DeNatale, Robert E. Mihailovich, Jonathan B. Hacker
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Patent number: 7068220Abstract: A hybrid circuit phase shifter assembly of RF MEMS switch modules and passive phase delay shifter circuits uses a low loss, preferably flip-chip, interconnection technology. The hybrid circuit assembly approach separates the fabrication of the MEMS switch modules from the fabrication of the passive phase delay circuits thereby avoiding process incompatibilities and low yields and providing substantial production cost savings. In another aspect of the invention, the integration on a common substrate of a MEMS-based hybrid circuit phase shifter assembly behind each of a plurality of radiating elements provides a compact, low cost electronic scanning antenna array.Type: GrantFiled: September 29, 2003Date of Patent: June 27, 2006Assignee: Rockwell Scientific Licensing, LLCInventors: Jeffrey F. DeNatale, Jonathan B. Hacker, Robert E. Mihailovich, William R. Norvell