Abstract: In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor.

Abstract: In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor.

Abstract: In a rotating disk reactor (1) for growing epitaxial layers on substrate (3), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis (10a) may include a higher concentration of a reactant gas (4) than the gas directed toward portions of the disk close to the axis (10d), so that portions of the substrate surfaces at different distances from the axis (14) receive substantially the same amount of reactant gas (4) per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.

Abstract: In a rotating disk reactor (1) for growing epitaxial layers on substrate (3), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis (10a) may include a higher concentration of a reactant gas (4) than the gas directed toward portions of the disk close to the axis (10d), so that portions of the substrate surfaces at different distances from the axis (14) receive substantially the same amount of reactant gas (4) per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.

Abstract: A system and method for evenly heating a substrate placed in a wafer carrier used in wafer treatment systems such as chemical vapor deposition reactors, wherein a first pattern of wafer compartments is provided on the top of the wafer carrier, such as one or more rings of wafer carriers, and a second pattern of inlaid material dissimilar to the wafer carrier material is inlaid on the bottom of the wafer carrier, and the second pattern of inlaid material is substantially the opposite of the first pattern of wafer compartments, such that there are at least as many material interfaces in intermediate regions without wafer compartments as there are in wafer carrying regions with wafers and wafer compartments.

Abstract: A system and method for evenly heating a substrate placed in a wafer carrier used in wafer treatment systems such as chemical vapor deposition reactors, wherein a first pattern of wafer compartments is provided on the top of the wafer carrier, such as one or more rings of wafer carriers, and a second pattern of inlaid material dissimilar to the wafer carrier material is inlaid on the bottom of the wafer carrier, and the second pattern of inlaid material is substantially the opposite of the first pattern of wafer compartments, such that there are at least as many material interfaces in intermediate regions without wafer compartments as there are in wafer carrying regions with wafers and wafer compartments.

Abstract: In a rotating disk reactor (1) for growing epitaxial layers on substrate (3), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis (10a) may include a higher concentration of a reactant gas (4) than the gas directed toward portions of the disk close to the axis (10d), so that portions of the substrate surfaces at different distances from the axis (14) receive substantially the same amount of reactant gas (4) per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.