Abstract: An apparatus comprises a first liquid input line, a second liquid input line, a third liquid input line, a first liquid flow controller with an input in fluid contact with the first liquid input line, a second liquid flow controller with an input in fluid contact with the second liquid input line, a third liquid flow controller with an input in fluid contact with the third liquid input line, a common manifold in fluid contact with an output of the first liquid flow controller and an output of the second liquid flow controller and an output of the third liquid flow controller, and a vaporizer with an input in fluid contact with the common manifold.

Abstract: Films that can be useful in large area gap fill applications, such as in the formation of advanced 3D NAND devices, involve processing a semiconductor substrate by depositing on a patterned semiconductor substrate a doped silicon oxide film, the film having a thickness of at least 5 gm, and annealing the doped silicon oxide film to a temperature above the film glass transition temperature. In some embodiments, reflow of the film may occur. The composition and processing conditions of the doped silicon oxide film may be tailored so that the film exhibits substantially zero as-deposited stress, substantially zero stress shift post-anneal, and substantially zero shrinkage post-anneal.

Abstract: A method for reducing post-annealing shrinkage of silicon dioxide film includes arranging a substrate on a substrate support in a processing chamber; setting a pressure in the processing chamber to a predetermined pressure range; setting a temperature of the substrate support to a predetermined temperature range; supplying a process gas mixture to a gas distribution device. The process gas mixture includes TEOS gas, a gas including an oxygen species, and argon gas. The argon gas comprises greater than 20% of the process gas mixture by volume. The method further includes striking plasma and depositing the film on the substrate.

Abstract: A method for cleaning a processing chamber of a substrate processing system includes supplying nitrogen trifluoride (NF3) gas to a remote plasma source (RPS); generating RPS plasma using the RPS; supplying the RPS plasma to the processing chamber; supplying NF3 gas as bypass gas to the processing chamber; striking in-situ plasma in the processing chamber while the RPS plasma is supplied; and cleaning the processing chamber during a cleaning period using both the RPS plasma and the in-situ plasma.

Abstract: A method for cleaning a processing chamber of a substrate processing system includes supplying nitrogen trifluoride (NF3) gas to a remote plasma source (RPS); generating RPS plasma using the RPS; supplying the RPS plasma to the processing chamber; supplying NF3 gas as bypass gas to the processing chamber; striking in-situ plasma in the processing chamber while the RPS plasma is supplied; and cleaning the processing chamber during a cleaning period using both the RPS plasma and the in-situ plasma.

Abstract: A method for reducing post-annealing shrinkage of silicon dioxide film includes arranging a substrate on a substrate support in a processing chamber; setting a pressure in the processing chamber to a predetermined pressure range; setting a temperature of the substrate support to a predetermined temperature range; supplying a process gas mixture to a gas distribution device. The process gas mixture includes TEOS gas, a gas including an oxygen species, and argon gas. The argon gas comprises greater than 20% of the process gas mixture by volume. The method further includes striking plasma and depositing the film on the substrate.

Abstract: The present invention relates to a Hydrogel cover for a temperature sensor. The sensor can be used on infants in a radiant warmer and/or incubator. In a first embodiment the sensor is fully enclosed by the Hydrogel. In a second embodiment the sensor may be removed through a releasable cover. This results in improved thermal response and/or accuracy.