Patents by Inventor JONATHAN D. COOK
JONATHAN D. COOK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11937037Abstract: A housing has a bud portion abutting an elongated stem portion. The bud portion is to fit within an ear. The bud portion has a primary sound outlet at its far end that is to be inserted into an outer ear canal, and abuts the stem portion at its near end. A speaker driver is inside the bud portion. Electronic circuitry inside the housing includes a wireless communications interface to receive audio content over-the-air and in response provides an audio signal to the speaker driver. A rechargeable battery as a power source for the electronic circuitry is located inside a cavity of the stem portion. Other embodiments are also described and claimed.Type: GrantFiled: May 27, 2022Date of Patent: March 19, 2024Assignee: Apple Inc.Inventors: Zachary C. Rich, Kurt R. Stiehl, Arun D. Chawan, Michael B. Howes, Jonathan S. Aase, Esge B. Andersen, Yacine Azmi, Jahan C. Minoo, David J. Shaw, Aarti Kumar, Augustin Prats, Robert D. Watson, Baptiste P. Paquier, Axel D. Berny, Benjamin W. Cook, Jerzy S. Guterman, Benjamin Adair Cousins
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Publication number: 20230317444Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.Type: ApplicationFiled: June 8, 2023Publication date: October 5, 2023Applicant: SLT Technologies, Inc.Inventors: Wenkan JIANG, Mark P. D'EVELYN, Derrick S. KAMBER, Dirk EHRENTRAUT, Jonathan D. COOK, James WENGER
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Patent number: 11705322Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.Type: GrantFiled: May 22, 2020Date of Patent: July 18, 2023Assignee: SLT TECHNOLOGIES, INC.Inventors: Wenkan Jiang, Mark P. D'Evelyn, Derrick S. Kamber, Dirk Ehrentraut, Jonathan D. Cook, James Wenger
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Patent number: 11661670Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.Type: GrantFiled: December 23, 2020Date of Patent: May 30, 2023Assignee: SLT Technologies, IncInventors: Mark P. D'Evelyn, Drew W. Cardwell, Jonathan D. Cook
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Publication number: 20220136128Abstract: A method for growth of group III metal nitride crystals includes providing a manifold comprising including one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, the metallic surface comprising a composition that does not form a reaction product when exposed to the condensable mineralizer composition, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises exposing a seed crystal toType: ApplicationFiled: October 29, 2021Publication date: May 5, 2022Inventors: Mark P. D'EVELYN, Paul M. VON DOLLEN, Lisa M. GAY, Douglas W. POCIUS, Jonathan D. COOK
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Publication number: 20210249252Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.Type: ApplicationFiled: May 22, 2020Publication date: August 12, 2021Inventors: Wenkan JIANG, Mark P. D'EVELYN, Derrick S. KAMBER, Dirk EHRENTRAUT, Jonathan D. COOK, James WENGER
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Publication number: 20210222317Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.Type: ApplicationFiled: December 23, 2020Publication date: July 22, 2021Applicant: SLT Technologies, IncInventors: Mark P. D'EVELYN, Drew W. CARDWELL, Jonathan D. COOK
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Patent number: 11047041Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.Type: GrantFiled: March 10, 2020Date of Patent: June 29, 2021Assignee: SLT TECHNOLOGIES, INC.Inventors: Douglas W. Pocius, Derrick S. Kamber, Mark P. D'Evelyn, Jonathan D. Cook
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Publication number: 20200288882Abstract: A carrier for carrying footwear is presented. The carrier has a figure, the figure having a first hook, a second hook and a to. The first hook and the second hook are for coupling to the footwear. The carrier has a base for coupling to the figure. The base has a rotator, the rotator may be changed in position to afford the person wearing the carrier to be more comfortable. The base is coupled to the figure either directly or by a connecting rod. The rotator may be coupled to either the connecting rod or the figure to be more secure. The carrier further has a clip. The clip is useful for coupling the carrier to an article such as a belt, a waist band, a bag, a stroller, etc.Type: ApplicationFiled: March 14, 2019Publication date: September 17, 2020Inventor: Jonathan D Cook
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Publication number: 20200283892Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.Type: ApplicationFiled: March 10, 2020Publication date: September 10, 2020Inventors: Douglas W. POCIUS, Derrick S. KAMBER, Mark P. D'EVELYN, Jonathan D. COOK
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Patent number: 10619239Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.Type: GrantFiled: June 29, 2018Date of Patent: April 14, 2020Assignee: SLT TECHNOLOGIES, INC.Inventors: Douglas W. Pocius, Derrick S. Kamber, Mark P. D'Evelyn, Jonathan D. Cook
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Publication number: 20190161858Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.Type: ApplicationFiled: June 29, 2018Publication date: May 30, 2019Inventors: Douglas W. POCIUS, Derrick S. KAMBER, Mark P. D'EVELYN, Jonathan D. COOK
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Publication number: 20180371609Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.Type: ApplicationFiled: June 29, 2018Publication date: December 27, 2018Inventors: Douglas W. POCIUS, Derrick S. KAMBER, Mark P. D'EVELYN, Jonathan D. COOK
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Patent number: 10094017Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.Type: GrantFiled: January 29, 2016Date of Patent: October 9, 2018Assignee: SLT TECHNOLOGIES, INC.Inventors: Douglas W. Pocius, Derrick S. Kamber, Mark P. D'Evelyn, Jonathan D. Cook
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Publication number: 20160222506Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.Type: ApplicationFiled: January 29, 2016Publication date: August 4, 2016Inventors: DOUGLAS W. POCIUS, DERRICK S. KAMBER, MARK P. D'EVELYN, JONATHAN D. COOK