Patents by Inventor Jonathan D. Mohn
Jonathan D. Mohn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11270896Abstract: Provided are methods and apparatus for ultraviolet (UV) assisted capillary condensation to form dielectric materials. In some embodiments, a UV driven reaction facilitates photo-polymerization of a liquid phase flowable material. Applications include high quality gap fill in high aspect ratio structures and pore sealing of a porous solid dielectric film. According to various embodiments, single station and multi-station chambers configured for capillary condensation and UV exposure are provided.Type: GrantFiled: July 11, 2019Date of Patent: March 8, 2022Assignee: Lam Research CorporationInventors: Jonathan D. Mohn, Nicholas Muga Ndiege, Patrick A. van Cleemput, David Fang Wei Chen, Wenbo Liang, Shawn M. Hamilton
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Publication number: 20190333790Abstract: Provided are methods and apparatus for ultraviolet (UV) assisted capillary condensation to form dielectric materials. In some embodiments, a UV driven reaction facilitates photo-polymerization of a liquid phase flowable material. Applications include high quality gap fill in high aspect ratio structures and por sealing of a porous solid dielectric film. According to various embodiments, single station and multi-station chambers configured for capillary condensation and UV exposure are provided.Type: ApplicationFiled: July 11, 2019Publication date: October 31, 2019Inventors: Jonathan D. Mohn, Nicholas Muga Ndiege, Patrick A. van Cleemput, David Fang Wei Chen, Wenbo Liang, Shawn M. Hamilton
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Patent number: 10388546Abstract: Provided are methods and apparatus for ultraviolet (UV) assisted capillary condensation to form dielectric materials. In some embodiments, a UV driven reaction facilitates photo-polymerization of a liquid phase flowable material. Applications include high quality gap fill in high aspect ratio structures and por sealing of a porous solid dielectric film. According to various embodiments, single station and multi-station chambers configured for capillary condensation and UV exposure are provided.Type: GrantFiled: November 16, 2015Date of Patent: August 20, 2019Assignee: Lam Research CorporationInventors: Jonathan D. Mohn, Nicholas Muga Ndiege, Patrick A. Van Cleemput, David Fang Wei Chen, Wenbo Liang, Shawn M. Hamilton
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Patent number: 9916977Abstract: Provided are methods and apparatus for ultraviolet (UV) assisted capillary condensation to form dielectric materials. In some embodiments, a UV driven reaction facilitates photo-polymerization of a liquid phase flowable material. Applications include high quality gap fill in high aspect ratio structures and por sealing of a porous solid dielectric film. According to various embodiments, single station and multi-station chambers configured for capillary condensation and UV exposure are provided.Type: GrantFiled: November 16, 2015Date of Patent: March 13, 2018Assignee: Lam Research CorporationInventors: Patrick A. Van Cleemput, Nicholas Muga Ndiege, Jonathan D. Mohn
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Patent number: 9728380Abstract: Apparatuses and techniques for providing for variable radial flow conductance within a semiconductor processing showerhead are provided. In some cases, the radial flow conductance may be varied dynamically during use. In some cases, the radial flow conductance may be fixed but may vary as a function of radial distance from the showerhead centerline. Both single plenum and dual plenum showerheads are discussed.Type: GrantFiled: July 17, 2015Date of Patent: August 8, 2017Assignee: Novellus Systems, Inc.Inventors: Jonathan D. Mohn, Shawn M. Hamilton, Harald te Nijenhuis, Jeffrey E. Lorelli, Kevin Madrigal
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Patent number: 9719169Abstract: Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0° C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10° C. or higher than the wafer temperature.Type: GrantFiled: December 16, 2011Date of Patent: August 1, 2017Assignee: Novellus Systems, Inc.Inventors: Jonathan D. Mohn, Harald te Nijenhuis, Shawn M. Hamilton, Kevin Madrigal, Ramkishan Rao Lingampalli
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Publication number: 20170137943Abstract: Provided are methods and apparatus for ultraviolet (UV) assisted capillary condensation to form dielectric materials. In some embodiments, a UV driven reaction facilitates photo-polymerization of a liquid phase flowable material. Applications include high quality gap fill in high aspect ratio structures and por sealing of a porous solid dielectric film. According to various embodiments, single station and multi-station chambers configured for capillary condensation and UV exposure are provided.Type: ApplicationFiled: November 16, 2015Publication date: May 18, 2017Inventors: Jonathan D. Mohn, Nicholas Muga Ndiege, Patrick A. Van Cleemput, David Fang Wei Chen, Wenbo Liang, Shawn M. Hamilton
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Publication number: 20160020074Abstract: Apparatuses and techniques for providing for variable radial flow conductance within a semiconductor processing showerhead are provided. In some cases, the radial flow conductance may be varied dynamically during use. In some cases, the radial flow conductance may be fixed but may vary as a function of radial distance from the showerhead centerline. Both single plenum and dual plenum showerheads are discussed.Type: ApplicationFiled: July 17, 2015Publication date: January 21, 2016Inventors: Jonathan D. Mohn, Shawn M. Hamilton, Harald te Nijenhuis, Jeffrey E. Lorelli, Kevin Madrigal
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Patent number: 9121097Abstract: Apparatuses and techniques for providing for variable radial flow conductance within a semiconductor processing showerhead are provided. In some cases, the radial flow conductance may be varied dynamically during use. In some cases, the radial flow conductance may be fixed but may vary as a function of radial distance from the showerhead centerline. Both single plenum and dual plenum showerheads are discussed.Type: GrantFiled: September 28, 2012Date of Patent: September 1, 2015Assignee: Novellus Systems, Inc.Inventors: Jonathan D. Mohn, Shawn M. Hamilton, Harald te Nijenhuis, Jeffrey E. Lorelli, Kevin Madrigal
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Publication number: 20140061324Abstract: Apparatuses and techniques for providing for variable radial flow conductance within a semiconductor processing showerhead are provided. In some cases, the radial flow conductance may be varied dynamically during use. In some cases, the radial flow conductance may be fixed but may vary as a function of radial distance from the showerhead centerline. Both single plenum and dual plenum showerheads are discussed.Type: ApplicationFiled: September 28, 2012Publication date: March 6, 2014Inventors: Jonathan D. Mohn, Shawn M. Hamilton, Harald te Nijenhuis, Jeffrey E. Lorelli, Kevin Madrigal
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Publication number: 20120161405Abstract: Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0° C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10° C. or higher than the wafer temperature.Type: ApplicationFiled: December 16, 2011Publication date: June 28, 2012Inventors: Jonathan D. Mohn, Harald te Nijenhuis, Shawn M. Hamilton, Kevin Madrigal, Ramkishan Rao Lingampalli
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Patent number: 7369297Abstract: Hydrogen cleave silicon process for light modulating mirror structure using single crystal silicon as the base cross-member. Existing processes use two critical alignment steps that can contribute to higher actuation voltages and result in lower manufacturing yields. The hydrogen cleave process simplifies the manufacturing process to one step: transferring a thin film of single crystal silicon to the CMOS substrate, resulting in minimal alignment error and providing large bonding area.Type: GrantFiled: December 8, 2005Date of Patent: May 6, 2008Assignee: Miradia Inc.Inventors: Brian K. McGinley, Jonathan D. Mohn, Howard Woo
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Patent number: 7042619Abstract: Hydrogen cleave silicon process for light modulating mirror structure using single crystal silicon as the base cross-member. Existing processes use two critical alignment steps that can contribute to higher actuation voltages and result in lower manufacturing yields. The hydrogen cleave process simplifies the manufacturing process to one step: transferring a thin film of single crystal silicon to the CMOS substrate, resulting in minimal alignment error and providing large bonding area.Type: GrantFiled: June 18, 2004Date of Patent: May 9, 2006Assignee: Miradia Inc.Inventors: Brian K. McGinley, Jonathan D. Mohn, Howard Woo
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Patent number: 7011039Abstract: A multi-purpose chamber that can be configured for a variety of processes, including deposition processes and etch processes, for example, by installing one or more removable chamber liners. The multi-purpose chamber provides uniform plasma confinement around a substrate disposed in the chamber for various processing conditions. The multi-purpose chamber also provides efficient and uniform exhaust of processing gas from the chamber.Type: GrantFiled: July 7, 2000Date of Patent: March 14, 2006Assignee: Applied Materials, Inc.Inventors: Jonathan D. Mohn, John J. Helmsen, Michael Barnes
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Patent number: 6598615Abstract: A method and apparatus for use in conjunction with a plasma reaction chamber provide both throttling functionality and independent vacuum isolation for a turbomolecular pump. A throttle valve provides for precise reaction chamber pressure regulation, and a gate valve prevents extended exposure of the turbomolecular pump to atmospheric conditions during cleaning or other maintenance operations. The throttle valve and the gate valve may be actuated independently.Type: GrantFiled: November 7, 2000Date of Patent: July 29, 2003Assignee: Applied Materials, Inc.Inventors: John Holland, Michael Barnes, Steve S. Y. Mak, Patrick Leahey, Jonathan D. Mohn
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Patent number: 6401652Abstract: The present invention is embodied in a plasma reactor with an inductive coil antenna facing the reactor chamber in which the windings of the coil antenna have a flattened cross-sectional shape, the flat portion of the winding facing toward the plasma within the reactor. Preferably, the coil antenna is located outside the reactor and faces a ceiling or wall of the reactor chamber. The coil antenna may be a single helical coil winding or multiple concentric spiral windings.Type: GrantFiled: May 4, 2000Date of Patent: June 11, 2002Assignee: Applied Materials, Inc.Inventors: Jonathan D. Mohn, Arthur H. Sato, Kien Nai Chuc
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Patent number: 6379575Abstract: An apparatus 20 and process for treating and conditioning an etching chamber 30, and cleaning a thin, non-homogeneous, etch residue on the walls 45 and components of the etching chamber 30. In the etching step, a substrate 25 is etched in the etching chamber 30 to deposit a thin etch residue layer on the surfaces of the walls and components in the chamber. In the cleaning step, cleaning gas is introduced into a remote chamber 40 adjacent to the etching chamber 30, and microwave or RF energy is applied inside the remote chamber to form an activated cleaning gas. A short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber 30 to clean the etch residue on the walls 45 and components of the etching chamber.Type: GrantFiled: October 21, 1997Date of Patent: April 30, 2002Assignee: Applied Materials, Inc.Inventors: Gerald Zheyao Yin, Xue-Yu Qian, Patrick L. Leahey, Jonathan D. Mohn, Waiching Chow, Arthur Y. Chen, Zhi-Wen Sun, Brian K. Hatcher
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Patent number: 6095084Abstract: A process chamber 55 for processing a semiconductor substrate 60 in a plasma, comprises a process gas distributor 100 for distributing process gas into a plasma zone 65 in the chamber. An inductor antenna 135 is used to form an inductive plasma from the process gas in the plasma zone. A primary bias electrode 145 on a ceiling 140 of the chamber 55 has a conducting surface 150 exposed to the plasma zone 65. A dielectric member 155 comprising a power electrode 165 embedded therein, has a receiving surface for receiving a substrate 60. A secondary bias electrode 170 below the dielectric member 155 has a conducting surface 175 exposed to the plasma zone 65. An electrode voltage supply 180 maintains the power electrode 165, primary bias electrode 145, and secondary bias electrode 170, at different electrical potentials to provide a high density, highly directional, plasma in the plasma zone 65 of the chamber 55.Type: GrantFiled: July 14, 1997Date of Patent: August 1, 2000Assignee: Applied Materials, Inc.Inventors: Shamouil Shamouilian, Ananda H. Kumar, Arnold Kholodenko, Dennis S. Grimard, Jonathan D. Mohn, Michael G. Chafin, Kenneth S. Collins