Patents by Inventor Jonathan E. Halpert
Jonathan E. Halpert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10053622Abstract: A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the first moiety can be a semiconductor nanocrystal.Type: GrantFiled: July 4, 2013Date of Patent: August 21, 2018Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Jonathan E. Halpert, Jonathan Tischler, Moungi G. Bawendi, Vladimir Bulovic
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Patent number: 10014438Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.Type: GrantFiled: January 18, 2017Date of Patent: July 3, 2018Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
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Publication number: 20170327740Abstract: A blue light emitting semiconductor nanocrystal having an quantum yield of greater than 20% can be incorporated in a light emitting device.Type: ApplicationFiled: November 28, 2016Publication date: November 16, 2017Applicant: Massachusetts Institute of TechnologyInventors: Jonathan E. Halpert, Polina O. Anikeeva, Moungi G. Bawendi, Vladimir Bulovic
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Publication number: 20170125635Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.Type: ApplicationFiled: January 18, 2017Publication date: May 4, 2017Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
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Patent number: 9574134Abstract: A voltage driven light emitting device includes an electroluminescent material and semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers. The semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers emit light. The semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers can be doped to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.Type: GrantFiled: May 7, 2010Date of Patent: February 21, 2017Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Vanessa Wood, Matthew J. Panzer, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
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Patent number: 9550614Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.Type: GrantFiled: June 1, 2012Date of Patent: January 24, 2017Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
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Patent number: 9505978Abstract: A blue light emitting semiconductor nanocrystal having an quantum yield of greater than 20% can be incorporated in a light emitting device.Type: GrantFiled: August 9, 2007Date of Patent: November 29, 2016Assignee: Massachusetts Institute of TechnologyInventors: Jonathan E. Halpert, Polina O. Anikeeva, Moungi G. Bawendi, Vladimir Bulovic
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Patent number: 9093657Abstract: A white light emitting semiconductor nanocrystal includes a plurality of semiconductor nanocrystals.Type: GrantFiled: February 14, 2007Date of Patent: July 28, 2015Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Seth A. Coe-Sullivan, Vladimir Bulovic, Jonathan Steckel, Moungi G. Bawendi, Polina O. Anikeeva, Jonathan E. Halpert
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Publication number: 20140027680Abstract: A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the first moiety can be a semiconductor nanocrystal.Type: ApplicationFiled: July 4, 2013Publication date: January 30, 2014Applicant: Massachusetts Institute of TechnologyInventors: Jonathan E. HALPERT, Jonathan TISCHLER, Moungi G. BAWENDI, Vladimir BULOVIC
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Patent number: 8536776Abstract: A light emitting device including semiconductor nanocrystals can have a unipolar construction. The semiconductor nanocrystals emit light during device operation. The size and chemical composition of the semiconductor nanocrystals can be chosen to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.Type: GrantFiled: May 7, 2010Date of Patent: September 17, 2013Assignee: Massachusetts Institute of TechnologyInventors: Vanessa Wood, Matthew J. Panzer, Jean-Michel Caruge, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
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Patent number: 8480927Abstract: A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the first moiety can be a semiconductor nanocrystal.Type: GrantFiled: August 14, 2008Date of Patent: July 9, 2013Assignee: Massachusetts Institute of TechnologyInventors: Jonathan E. Halpert, Jonathan R. Tischler, Moungi Bawendi, Vladimir Bulovic
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Publication number: 20120292595Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.Type: ApplicationFiled: June 1, 2012Publication date: November 22, 2012Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
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Publication number: 20120238047Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.Type: ApplicationFiled: June 1, 2012Publication date: September 20, 2012Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Alexi Arango, Jonathan E. Halpert
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Patent number: 8232722Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.Type: GrantFiled: February 15, 2006Date of Patent: July 31, 2012Assignee: Massachusetts Institute of TechnologyInventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Alexi Arango, Jonathan E. Halpert
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Publication number: 20110127932Abstract: A blue light emitting semiconductor nanocrystal having an quantum yield of greater than 20% can be incorporated in a light emitting device.Type: ApplicationFiled: August 9, 2007Publication date: June 2, 2011Applicant: Massachusetts Institute of TechnologyInventors: Jonathan E. Halpert, Polin O. Anikeeva, Moungi G. Bawendi, Vladmir Bulovic
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Publication number: 20110080090Abstract: A light emitting device including semiconductor nanocrystals can have a unipolar construction. The semiconductor nanocrystals emit light during device operation. The size and chemical composition of the semiconductor nanocrystals can be chosen to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.Type: ApplicationFiled: May 7, 2010Publication date: April 7, 2011Applicant: Massachusetts Institute of TechnologyInventors: Vanessa Wood, Matthew J. Panzer, Jean-Michel Caruge, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
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Publication number: 20110057125Abstract: A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the rust moiety can be a semiconductor nanocrystal.Type: ApplicationFiled: August 14, 2008Publication date: March 10, 2011Applicant: Massachusetts Institute of TechnologyInventors: Jonathan E. Halpert, Jonathan R. Tischler, Moungi Bawendi, Vladimir Bulovic
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Publication number: 20110025224Abstract: A voltage driven light emitting device includes an electroluminescent material and semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers. The semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers emit light. The semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers can be doped to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.Type: ApplicationFiled: May 7, 2010Publication date: February 3, 2011Applicant: Massachusetts Institute of TechnologyInventors: Vanessa Wood, Matthew J. Panzer, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
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Publication number: 20100001256Abstract: A white light emitting semiconductor nanocrystal includes a plurality of semiconductor nanocrystals.Type: ApplicationFiled: February 14, 2007Publication date: January 7, 2010Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Seth A. Coe-Sullivan, Vladimir Bulovic, Jonathan Steckel, Moungi G. Bawendi, Polina O. Anikeeva, Jonathan E. Halpert
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Patent number: 7394094Abstract: A semiconductor nanocrystal can have a barbell shape. The nanocrystal can include two semiconductor materials selected so that upon excitation, one charge carrier is substantially confined to the one semiconductor material and the other charge carrier is substantially confined to the other semiconductor material.Type: GrantFiled: December 29, 2005Date of Patent: July 1, 2008Assignee: Massachusetts Institute of TechnologyInventors: Jonathan E. Halpert, Moungi G. Bawendi