Patents by Inventor Jonathan E. Halpert

Jonathan E. Halpert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10053622
    Abstract: A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the first moiety can be a semiconductor nanocrystal.
    Type: Grant
    Filed: July 4, 2013
    Date of Patent: August 21, 2018
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Jonathan E. Halpert, Jonathan Tischler, Moungi G. Bawendi, Vladimir Bulovic
  • Patent number: 10014438
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: July 3, 2018
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
  • Publication number: 20170327740
    Abstract: A blue light emitting semiconductor nanocrystal having an quantum yield of greater than 20% can be incorporated in a light emitting device.
    Type: Application
    Filed: November 28, 2016
    Publication date: November 16, 2017
    Applicant: Massachusetts Institute of Technology
    Inventors: Jonathan E. Halpert, Polina O. Anikeeva, Moungi G. Bawendi, Vladimir Bulovic
  • Publication number: 20170125635
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: January 18, 2017
    Publication date: May 4, 2017
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
  • Patent number: 9574134
    Abstract: A voltage driven light emitting device includes an electroluminescent material and semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers. The semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers emit light. The semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers can be doped to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: February 21, 2017
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Vanessa Wood, Matthew J. Panzer, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
  • Patent number: 9550614
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: January 24, 2017
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
  • Patent number: 9505978
    Abstract: A blue light emitting semiconductor nanocrystal having an quantum yield of greater than 20% can be incorporated in a light emitting device.
    Type: Grant
    Filed: August 9, 2007
    Date of Patent: November 29, 2016
    Assignee: Massachusetts Institute of Technology
    Inventors: Jonathan E. Halpert, Polina O. Anikeeva, Moungi G. Bawendi, Vladimir Bulovic
  • Patent number: 9093657
    Abstract: A white light emitting semiconductor nanocrystal includes a plurality of semiconductor nanocrystals.
    Type: Grant
    Filed: February 14, 2007
    Date of Patent: July 28, 2015
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Seth A. Coe-Sullivan, Vladimir Bulovic, Jonathan Steckel, Moungi G. Bawendi, Polina O. Anikeeva, Jonathan E. Halpert
  • Publication number: 20140027680
    Abstract: A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the first moiety can be a semiconductor nanocrystal.
    Type: Application
    Filed: July 4, 2013
    Publication date: January 30, 2014
    Applicant: Massachusetts Institute of Technology
    Inventors: Jonathan E. HALPERT, Jonathan TISCHLER, Moungi G. BAWENDI, Vladimir BULOVIC
  • Patent number: 8536776
    Abstract: A light emitting device including semiconductor nanocrystals can have a unipolar construction. The semiconductor nanocrystals emit light during device operation. The size and chemical composition of the semiconductor nanocrystals can be chosen to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: September 17, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Vanessa Wood, Matthew J. Panzer, Jean-Michel Caruge, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
  • Patent number: 8480927
    Abstract: A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the first moiety can be a semiconductor nanocrystal.
    Type: Grant
    Filed: August 14, 2008
    Date of Patent: July 9, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Jonathan E. Halpert, Jonathan R. Tischler, Moungi Bawendi, Vladimir Bulovic
  • Publication number: 20120292595
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: June 1, 2012
    Publication date: November 22, 2012
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
  • Publication number: 20120238047
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: June 1, 2012
    Publication date: September 20, 2012
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Alexi Arango, Jonathan E. Halpert
  • Patent number: 8232722
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Grant
    Filed: February 15, 2006
    Date of Patent: July 31, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Alexi Arango, Jonathan E. Halpert
  • Publication number: 20110127932
    Abstract: A blue light emitting semiconductor nanocrystal having an quantum yield of greater than 20% can be incorporated in a light emitting device.
    Type: Application
    Filed: August 9, 2007
    Publication date: June 2, 2011
    Applicant: Massachusetts Institute of Technology
    Inventors: Jonathan E. Halpert, Polin O. Anikeeva, Moungi G. Bawendi, Vladmir Bulovic
  • Publication number: 20110080090
    Abstract: A light emitting device including semiconductor nanocrystals can have a unipolar construction. The semiconductor nanocrystals emit light during device operation. The size and chemical composition of the semiconductor nanocrystals can be chosen to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.
    Type: Application
    Filed: May 7, 2010
    Publication date: April 7, 2011
    Applicant: Massachusetts Institute of Technology
    Inventors: Vanessa Wood, Matthew J. Panzer, Jean-Michel Caruge, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
  • Publication number: 20110057125
    Abstract: A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the rust moiety can be a semiconductor nanocrystal.
    Type: Application
    Filed: August 14, 2008
    Publication date: March 10, 2011
    Applicant: Massachusetts Institute of Technology
    Inventors: Jonathan E. Halpert, Jonathan R. Tischler, Moungi Bawendi, Vladimir Bulovic
  • Publication number: 20110025224
    Abstract: A voltage driven light emitting device includes an electroluminescent material and semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers. The semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers emit light. The semiconductor nanocrystals, luminescent organic small molecules, mixtures of emissive species molecules, or conductive polymers can be doped to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.
    Type: Application
    Filed: May 7, 2010
    Publication date: February 3, 2011
    Applicant: Massachusetts Institute of Technology
    Inventors: Vanessa Wood, Matthew J. Panzer, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
  • Publication number: 20100001256
    Abstract: A white light emitting semiconductor nanocrystal includes a plurality of semiconductor nanocrystals.
    Type: Application
    Filed: February 14, 2007
    Publication date: January 7, 2010
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Seth A. Coe-Sullivan, Vladimir Bulovic, Jonathan Steckel, Moungi G. Bawendi, Polina O. Anikeeva, Jonathan E. Halpert
  • Patent number: 7394094
    Abstract: A semiconductor nanocrystal can have a barbell shape. The nanocrystal can include two semiconductor materials selected so that upon excitation, one charge carrier is substantially confined to the one semiconductor material and the other charge carrier is substantially confined to the other semiconductor material.
    Type: Grant
    Filed: December 29, 2005
    Date of Patent: July 1, 2008
    Assignee: Massachusetts Institute of Technology
    Inventors: Jonathan E. Halpert, Moungi G. Bawendi