Abstract: Systems, devices, and techniques described herein relate to parallel routing of data packets prior to and/or during a handoff event for a user equipment (UE) between cells. An example method includes determining, by a network device, that a UE is about to participate in a handoff event while the network device is transmitting data packets associated with a service to a cell currently in communication with the UE. The network device may determine a destination cell in which the UE will be performing the handoff with and may replicate the data packets and send the data packets to both of the current cell and the destination cell in parallel. When the UE performs the handoff with the destination cell, the data packets required for receiving the service will already be present and the UE will not experience any interruption in the service prior to and/or during the handoff.

Abstract: Systems, devices, and techniques described herein relate to parallel routing of data packets prior to and/or during a handoff event for a user equipment (UE) between cells. An example method includes determining, by a network device, that a UE is about to participate in a handoff event while the network device is transmitting data packets associated with a service to a cell currently in communication with the UE. The network device may determine a destination cell in which the UE will be performing the handoff with and may replicate the data packets and send the data packets to both of the current cell and the destination cell in parallel. When the UE performs the handoff with the destination cell, the data packets required for receiving the service will already be present and the UE will not experience any interruption in the service prior to and/or during the handoff.

Abstract: Systems, devices, and techniques described herein relate to parallel routing of data packets prior to and/or during a handoff event for a user equipment (UE) between cells. An example method includes determining, by a network device, that a UE is about to participate in a handoff event while the network device is transmitting data packets associated with a service to a cell currently in communication with the UE. The network device may determine a destination cell in which the UE will be performing the handoff with and may replicate the data packets and send the data packets to both of the current cell and the destination cell in parallel. When the UE performs the handoff with the destination cell, the data packets required for receiving the service will already be present and the UE will not experience any interruption in the service prior to and/or during the handoff.

Abstract: User devices can include a lifestyle analyzer component to capture user data to monitor health conditions of the user to provide a personalized lifestyle manager. In some instances, health data from a wearable device can be cross correlated to other application data such as calendar items, communications, location data, social media data, and financial data. Based on negative health metrics (e.g., stress level increase, sleep deprivation, etc.), the lifestyle manager may provide directives to automatically manage communications, schedules, and/or tasks. The user device can capture user data and transmit the data to a serving device to aggregate the data. The serving device can use the aggregated data to perform lifestyle analysis to generate directives for lifestyle management and rules to implement the directives. If the user accepts a directive, the lifestyle manager may implement the rules on a user device.

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Abstract: An ion implanter is disclosed. One such ion implanter includes an ion beam source configured to generate oxygen, nitrogen, helium, or hydrogen ions into an ion beam with a specific dose range, and an analyzer magnet configured to remove undesired species from the ion beam. The ion implanter includes an electrostatic chuck having a backside gas thermal coupling that is configured to hold a single workpiece for silicon-on-insulator implantation by the ion beam and is configured to cool the workpiece to a temperature in a range of approximately 300° C. to 600° C.

Abstract: An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer.

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Abstract: Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.

Abstract: Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.

Abstract: Techniques for reducing effects of photoresist outgassing are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for reducing effects of photoresist outgassing in an ion implanter. The apparatus may comprise a drift tube located between an end-station and an upstream beamline component. The apparatus may also comprise a first variable aperture between the drift tube and the end-station. The apparatus may further comprise a second variable aperture between the drift tube and the upstream beamline component. The first variable aperture and the second variable aperture can be adjusted to facilitate differential pumping.

Abstract: A technique for improving ion implanter productivity is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving productivity of an ion implanter having an ion source chamber. The method may comprise supplying a gaseous substance to the ion source chamber, the gaseous substance comprising one or more reactive species for generating ions for the ion implanter. The method may also comprise stopping the supply of the gaseous substance to the ion source chamber. The method may further comprise supplying a hydrogen containing gas to the ion source chamber for a period of time after stopping the supply of the gaseous substance.

Abstract: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.

Abstract: An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer.

Abstract: A plasma flood system for use in the implantation of ions in a semiconductor substrate comprising a plasma and low energy electron source for developing a plasma containing low energy electrons for magnetic field enhanced transmission to a negatively biased, magnetic field assisted electron confinement tube and into an ion beam flowing axially through the tube to the semiconductor substrate for self regulating and neutralizing positive charges on the surface of the substrate without causing significant negative charging of the substrate.