Patents by Inventor Jonathan Gordon Conn Veinot

Jonathan Gordon Conn Veinot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for preparing nanocrystalline germanium in GeOand freestanding germanium nanoparticles
    Patent number: 8585797
    Abstract: Methods for preparing nc-Ge/GeO2 composites by under reductive thermal processing conditions are described. Also described are methods of preparing freestanding nc-Ge via release from the nc-Ge/GeO2 composites.
    Type: Grant
    Filed: June 16, 2008
    Date of Patent: November 19, 2013
    Assignee: The Governors of the University of Alberta
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • Aromatic ether-containing fluorene monomers, processes for their preparation and polymerization thereof
    Patent number: 8410243
    Abstract: Novel aromatic ether-containing monomers are described along with processes for their preparation and their polymerization into corresponding aromatic ether-containing polyfluorenes. These polyfluorenes exhibited stable blue-emission and therefore have application in polymer light-emitting devices.
    Type: Grant
    Filed: December 16, 2009
    Date of Patent: April 2, 2013
    Assignee: The Governors of the University of Alberta
    Inventors: Jonathan Gordon Conn Veinot, Leah Coumont, Davin Glenn Piercey, Shaune Lee McFarlane
  • Methods for preparing silicon germanium alloy nanocrystals
    Patent number: 8366826
    Abstract: The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube furnace. Also included is a method of preparing free standing silicon germanium nanocrystals by the acid etching product of the product of the thermal disproportionation of a siliceous material and GeX2.
    Type: Grant
    Filed: January 14, 2008
    Date of Patent: February 5, 2013
    Assignee: The Governors of the University of Alberta
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • Method for preparing nanocrystalline silicon in SiOand freestanding silicon nanoparticles
    Patent number: 8323731
    Abstract: Methods for preparing nanocrystalline-Si/SiO2 composites by treating hydrogen silsesquioxane (HSQ) under reductive thermal curing conditions are described. Also described are methods of preparing silicon nanoparticles by acid etching the nanocrystalline-Si/SiO2 composites.
    Type: Grant
    Filed: May 26, 2006
    Date of Patent: December 4, 2012
    Assignee: The Governors of the University of Alberta
    Inventors: Jonathan Gordon Conn Veinot, Colin Michael Hessel
  • Method for preparing size-controlled silicon carbide nancrystals
    Patent number: 7906672
    Abstract: The present disclosure relates to a method of preparing silicon carbon nanocrystals (SiC-NCs) in a size-dependent manner by reacting a compound of the Formula I: R1Si(X1)3, with a compound of the Formula II Si(X2)4(II) under conditions for the hydrolysis and condensation of the compound of the Formula I and the compound of the Formula II to form a siloxane polymer comprising repeating units of the Formula III: —[(R1SiO1.5)x(SiO2)y]—, followed by thermal processing of the siloxane polymer under conditions to form SiC-NC's. Optionally the SiC-NC's are liberated to provide free standing SiC-NC's.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: March 15, 2011
    Assignee: The Governors of the University of Alberta
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • Method for Preparing Size-Controlled Silicon Carbide Nancrystals
    Publication number: 20100256408
    Abstract: The present disclosure relates to a method of preparing silicon carbon nanocrystals (SiC-NCs) in a size-dependent manner by reacting a compound of the Formula I: R1Si(X1)3, with a compound of the Formula II Si(X2)4(II) under conditions for the hydrolysis and condensation of the compound of the Formula I and the compound of the Formula II to form a siloxane polymer comprising repeating units of the Formula III: —[(R1SiO1.5)x(SiO2)y]—, followed by thermal processing of the siloxane polymer under conditions to form SiC-NC's. Optionally the SiC-NC's are liberated to provide free standing SiC-NC's.
    Type: Application
    Filed: December 14, 2009
    Publication date: October 7, 2010
    Applicant: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • Aromatic Ether-Containing Fluorene Monomers, Processes for their Preparation and Polymerization Thereof
    Publication number: 20100240856
    Abstract: Novel aromatic ether-containing monomers are described along with processes for their preparation and their polymerization into corresponding aromatic ether-containing polyfluorenes. These polyfluorenes exhibited stable blue-emission and therefore have application in polymer light-emitting devices.
    Type: Application
    Filed: December 16, 2009
    Publication date: September 23, 2010
    Applicant: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA
    Inventors: Jonathan Gordon Conn Veinot, Leah Coumont, Davin Glenn Piercey, Shaune Lee McFarlane
  • METHOD FOR PREPARING NANOCRYSTALLINE GERMANIUM IN GEO2 AND FREESTANDING GERMANIUM NANOPARTICLES
    Publication number: 20100193737
    Abstract: Methods for preparing nc-Ge/GeO2 composites by under reductive thermal processing conditions are described. Also described are methods of preparing freestanding nc-Ge via release from the nc-Ge/GeO2 composites.
    Type: Application
    Filed: June 16, 2008
    Publication date: August 5, 2010
    Applicant: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • METHODS FOR PREPARING SILICON GERMANIUM ALLOY NANOCRYSTALS
    Publication number: 20100068114
    Abstract: The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube furnace. Also included is a method of preparing free standing silicon germanium nanocrystals by the acid etching product of the product of the thermal disproportionation of a siliceous material and GeX2.
    Type: Application
    Filed: January 14, 2008
    Publication date: March 18, 2010
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • METHOD FOR PREPARING NANOCRYSTALLINE SILICON IN SIO2 AND FREESTANDING SILICON NANOPARTICLES
    Publication number: 20090117392
    Abstract: Methods for preparing nanocrystalline-Si/SiO2 composites by treating hydrogen silsesquioxane (HSQ) under reductive thermal curing conditions are described. Also described are methods of preparing silicon nanoparticles by acid etching the nanocrystalline-Si/SiO2 composites.
    Type: Application
    Filed: May 26, 2006
    Publication date: May 7, 2009
    Inventors: Jonathan Gordon Conn Veinot, Colin Michael Hessel
  • SUBSTRATES COATED WITH ORGANOSILOXANE NANOFIBERS, METHODS FOR THEIR PREPARATION, USES AND REACTIONS THEREOF
    Publication number: 20080311337
    Abstract: The present disclosure relates to method of forming organosiloxane nanofibers on substrates, in particular by contacting an activated substrate with a vapor comprising vinyltrichlorosilane. The disclosure relates to the substrates thus formed and to various uses thereof. The disclosure further relates to a general method of preparing hydrophilic siloxane nanofibers on a substrate comprising by annealing any substrate coated with organosiloxane nanofibers under conditions to remove substantially all of the organic portions of the organosiloxane nanofibers.
    Type: Application
    Filed: May 28, 2008
    Publication date: December 18, 2008
    Inventors: Jonathan Gordon Conn Veinot, De-ann Rollings, Shufen Tsoi, Jeremy Sit