Abstract: Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab of sacrificial material on a side of a switching device which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one opening formed on the at least one tab which is on the side of the switching device, and sealing the at least one opening with a capping material.

Abstract: A micro-electromechanical systems (MEMS) includes a substrate onto which a first conductive pad and a second conductive pad are formed. A conductive anchor coupled to the first conductive pad is a semi-circular frame that includes a first radial tab and a second radial tab. A conductive cantilever disc has a first end portion, a middle portion, and a second end portion. The first end portion of the conductive cantilever disc is coupled to the first radial tab and the second radial tab of the conductive anchor. The second end portion of the conductive cantilever disc is suspended over the second conductive pad with the middle portion being between the first end portion and the second end portion. A conductive actuator plate is formed onto the substrate at a location beneath the middle portion of the cantilever disc and between the first conductive pad and the second conductive pad.

Abstract: A micro-electromechanical (MEM) device has a folded tether spring in which each fold of the spring is surrounded by a rigidly fixed inner structure and outer structure. The fixed inner structure increases restoring force of the spring. The rigidly fixed inner and outer structures each have a major surface that include a plurality of notches of fixed width relative to a distance between the major surface and the spring. Additionally in one form extensions from the major surface of the rigidly fixed inner and outer structures are provided at distal ends thereof to make initial contact with the spring. The notches of the MEM device both reduce surface area contact with the spring and wick moisture away from the spring to minimize stiction.

Abstract: A sensor has a support substrate (200), an electrode (110, 510, 710) movable relative to a surface (201) of the support substrate (200) and comprised of a first material, a structure (160, 460, 560, 760) over a portion of the electrode (110, 510, 710) to limit mobility of the electrode (110, 510, 710) and comprised of a second material different from the first material, and bonding pads (170, 470) outside a perimeter of the electrode (110, 510, 710) and comprised of the second material.

Abstract: An electronic component includes a support substrate (101), a fixed electrode (113) overlying the support substrate (101), a movable electrode (123, 423) overlying the support substrate and the first electrode (113) wherein the first and second electrodes (113, 123, and 423) form a capacitor with a sensing area, an anchor (122, 422) coupled to the support substrate (101), and beams (125, 425) coupling different attachment points (129) of the second electrode (123, 423) to the anchor (122, 422) wherein the different attachment points (129) form a simply connected polygon and wherein a portion of the sensing area is located within the simply connected polygon.

Abstract: A field effect transistor (10) for chemical sensing by measuring a change in a surface potential of a gate electrode (48) due to exposure to a fluid has a semiconductor substrate (12) with a trench (18,20). The trench has a first sidewall (30) and a second sidewall (32) disposed opposite the first sidewall to provide a fluid gap (50) for the fluid to be sensed. The gate electrode is disposed overlying the first sidewall of the trench, and a source region (54) and a drain region (56) are disposed in the second sidewall of the trench. A channel region (52) is disposed between the source and drain regions, and the gate electrode is disposed opposite the first channel region across the fluid gap. A heater (26) for regulating the temperature of the gate electrode is disposed in the first sidewall of the trench.

Abstract: A field effect transistor (10) for chemical sensing by measuring a change in a surface potential of a gate electrode (48) due to exposure to a fluid has a semiconductor substrate (12) with a trench (18, 20). The trench has a first sidewall (30) and a second sidewall (32) disposed opposite the first sidewall to provide a fluid gap (50) for the fluid to be sensed. The gate electrode is disposed overlying the first sidewall of the trench, and a source region (54) and a drain region (56) are disposed in the second sidewall of the trench. A channel region (52) is disposed between the source and drain regions, and the gate electrode is disposed opposite the first channel region across the fluid gap. A heater (26) for regulating the temperature of the gate electrode is disposed in the first sidewall of the trench.