Abstract: A multi-layer aluminum nitride ceramic, multi-heating element substrate (11) is provided for forming electrical bonds between integrated circuits (13) and an interposer structure (14) using a thermocompression bonding process. The individually energizable heater element traces (9) can be run through common regions of the heater surface platform (5). A network of cooling vias can be run through other parts of the substrate. The traces are then separately controlled and energized during a predetermined routine resulting in a temperature profile that maintains a substantially constant temperature plateau phase near a reflow temperature, and a more uniform temperature across the spaced apart surface regions of the heater substrate, thus imparting a more precisely uniform heating to the parts being bonded.

Abstract: A monolithic, substantially hermetic joining or bonding of two or more aluminum nitride (“AlN”) ceramic components is made by promoting transient liquid phase sintering near the contact areas between the components. In a first approach, AlN particles are combined with a rare earth oxide sintering additive such as yttrium oxide (Y2O3) in a joining paste can be applied between the joining surfaces of fired ceramic preformed components prior to final firing to weld the components together. In a second approach, the additive is added to green mixture, and the components having different shrinkage aspect ratios are mated and cofired in an atmosphere containing a partial pressure of the additive. The additive encourages wetting and diffusion of the liquid phases present on the surfaces of ceramic interface particles in the contact areas during final firing.

Abstract: A sintered aluminum nitride substrate having a thermal conductivity of about 60 W/m-K to about 150 W/m-K, a flexural strength of about 200 MPa to about 325 MPa, a volume resistivity of greater than 1010 Ohm cm, a density of at least about 95% of theoretical, optionally at least 97%, and a reflectance factor of at least about 60% substantially over the wavelength range of 360 nm to 820 nm. A low temperature process for sintering aluminum nitride includes providing an AlN sintering formulation of AlN powder and a sintering aid of yttria, calcia, and optionally added alumina, forming the AlN sintering formulation into a green body, and sintering the green body at a temperature of about 1675° C. to 1750° C.

Abstract: A monolithic, substantially hermetic joining or bonding of two or more aluminum nitride (“AlN”) ceramic components is made by promoting transient liquid phase sintering near the contact areas between the components. In a first approach, AlN particles are combined with a rare earth oxide sintering additive such as yttrium oxide (Y2O3) in a joining paste can be applied between the joining surfaces of fired ceramic preformed components prior to final firing to weld the components together. In a second approach, the additive is added to green mixture, and the components having different shrinkage aspect ratios are mated and cofired in an atmosphere containing a partial pressure of the additive. The additive encourages wetting and diffusion of the liquid phases present on the surfaces of ceramic interface particles in the contact areas during final firing. Such processes can be used to form complex ceramic structures such as a ceramic susceptor used in integrated circuit fabrication.

Abstract: A substrate for a microelectronic package comprising a substrate that has grooves on a surface for bonding. A method for preparing a substrate for bonding comprising forming a grooved surface in the substrate for accepting a die for bonding, wherein the grooves are of sufficient size to provide a substantially uniform die bond, but no so large as to nullify the thermal path to the underlying substrate.

Abstract: A controlled dielectric loss, sintered aluminum nitride body having a density of greater than about 95% theoretical, a thermal conductivity of greater than about 100 W/m-K, and a dissipation factor measured at room temperature at about 1 KHz selected from:(a) less than or equal to about 0.001; and(b) greater than or equal to about 0.01.A process for producing a controlled dielectric loss, sintered aluminum nitride body, comprising heat treating an aluminum nitride body at sintering temperatures, including providing a heat treatment atmosphere which effects a selected nitrogen vacancy population in the aluminum nitride body at the sintering temperatures, and cooling the aluminum nitride body from sintering temperatures at a controlled rate and in a cooling atmosphere effective to control the selected nitrogen vacancy population.

Abstract: Disclosed is a method of forming an aluminum nitride article. The method includes the steps of adding platinum to a composition including a binder, aluminum nitride particles and a sintering aid; forming the composition into an article; placing the article in a substantially non-carbonaceous container; and sintering the article in a reducing atmosphere to cause removal of the binder and densification of the aluminum nitride article, wherein the platinum catalyzes the removal of the binder.

Abstract: An aluminum nitride ceramic having enhanced properties suitable for electronic packaging applications can be prepared from a synergistic aluminum nitride powder/sintering aid mixture, in which the sintering aid is formulated to provide a resultant desirable second phase within the sintered body. The aluminum nitride powder/sintering aid mixture can be formed into green sheet-metal laminates and sintered at low temperature to yield high density, high electrical resistivity, and high thermal conductivity metal ceramic sintered bodies with low camber.

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

Abstract: An aluminum nitride ceramic having desired properties suitable for electronic packaging applications can be prepared from a novel aluminum nitride powder/sintering aid mixture. The sintering aid comprises a glassy component formed from alumina, calcia and boria, and a non-vitreous component comprising an element or compound of a metal of Group IIa, IIIa, or the lanthanides, preferably crystalline oxides, reactibis with the crystallized glass component and the alumina from the Al N grains. Alternatively, the sintering aid comprises a multi-component glass composition capable of forming the above components upon melting and thereafter crystallizing upon reaction.

Abstract: An aluminum nitride ceramic having desired properties suitable for electronic packaging applications can be prepared from a novel aluminum nitride powder/sintering aid mixture. The sintering aid comprises a glassy component formed from alumina, calcia and boria, and a non-vitreous component comprising an element or compound of a metal of Group IIa, IIIa, or the lanthanides, preferably crystalline oxides, reactible with the crystallized glass component and the alumina from the AlN grains. Alternatively, the sintering aid comprises a multi-component glass composition capable of forming the above components upon melting and thereafter crystallizing upon reaction.

Abstract: Novel additives are disclosed comprising a material capable of absorbing hydrogen and recombining oxygen, which additive is ideally suited for incorporation in sealed cells. The additive may be disposed in an energy storage device in several manners such as a coating on a negative electrode, a thin layer disposed between cell separators, an auxilliary electrode, and as one negative electrode in a device having a plurality of negative and positive electrodes.

Abstract: The present invention provides a novel amorphous metal alloy composition which reversibly stores hydrogen and is useful as the hydrogen storage electrode in an energy storage device. The amorphous metal alloy is made up of at least three elements with at least one element of Ag, Hg, or Pt; at least one element of Pb, Cu, Cr, Mo, W, Ni, Al, Co, Fe, Zn, Cd, Ru or Mn: and at least one element of Ca, Mg, Ti, Zr, Hf, Nb, V or Ta.

Abstract: Novel materials having the ability to reversibly store hydrogen are amorphous metal alloys of the formulaA.sub.a M.sub.b M'.sub.cwhereinA is at least one metal selected from the group consisting of Ag, Au, Hg, Pd and Pt;M is at least one metal selected from the group consisting of Pb, Ru, Cu, Cr, Mo, Si, W, Ni, Al, Sn, Co, Fe, Zn, Cd, Ga and Mn; andM' is at least one metal selected from the group consisting of Ca, Mg, Ti, Y, Zr, Hf, Nb, V, Ta and the rare earths; andwhereina ranges from greater than zero to about 0.80;b ranges from zero to about 0.70; andc ranges from about 0.08 to about 0.95;characterized in that (1) a substantial portion of A is disposed on the surface of said material and/or (2) that said material functions as an active surface layer for adsorbing/desorbing hydrogen in conjunction with a bulk storage material comprising a reversible hydrogen storage material.

Abstract: The present invention is directed to a process for the synthesis of a compositionally graded substantially amorphous metal alloy comprising:(a) combining a bulk hydrogen storage material with an A-containing material to obtain a mixture thereof;(b) sealing the mixture in a mechanical milling device under an inert atmosphere; and(c) milling the mixture.Alloys produced by this process are useful for the efficient cyclic storage and release of hydrogen in large quantities without becoming embrittled, inactivated or corroded.

Abstract: Novel materials having the ability to reversibly store hydrogen are amorphous metal alloys of the formulaA.sub.a M.sub.b M'.sub.cwhereinA is at least one metal selected from the group consisting of Ag, Au, Hg, Pd and Pt;M is at least one metal selected from the group consisting of Pb, Ru, Cu, Cr, Mo, Si, W, Ni, Al, Sn, Co, Fe, Zn, Cd, Ga and Mn; and M' is at least one metal selected from the group consisting of Ca, Mg, Ti, Y, Zr, Hf, Nb, V, Ta and the rare earths; andwhereina ranges from greater than zero to about 0.80;b ranges from zero to about 0.70; andc ranges from about 0.08 to about 0.95;characterized in that (1) a substantial portion of A is disposed on the surface of said material and/or (2) that said material functions as an active surface layer for adsorbing/desorbing hydrogen in conjunction with a bulk storage material comprising a reversible hydrogen storage material.

Abstract: Improved electrolytic processes employing oxygen anodes. The improvement comprises the step of conducting a electrolysis process in an electrolytic cell having a platinum based amorphous metal alloy oxygen anode having the formulaPt.sub.p A.sub.a D.sub.dwhereA is Cr, Mo, W, Fe, Os, Ir, Cu, Ni, Rh, Pd, Ag, Ti, Ru, Nb, V, Ta, Au and mixtures thereof;D is B, C, Si, Al, Ge, P, As, Sb, Sn and mixtures thereof;p ranges from about 40 to 92;a ranges from about 0 to 40; andd ranges from about 8 to 60, with the proviso that p+a+d=100.