Abstract: The present invention relates to methods to treat neurological disorders comprising intrathecal injection of an effective amount of a double-stranded (ds) RNA into a subject in need, wherein the dsRNA inhibits the expression of a target gene and to pharmaceutical compositions useful for such treatment.

Abstract: The present invention relates to methods to treat neurological disorders comprising intrathecal injection of an effective amount of a double-stranded (ds) RNA into a subject in need, wherein the dsRNA inhibits the expression of a target gene and to pharmaceutical compositions useful for such treatment.

Abstract: The present invention relates to a novel microRNA, mir-208-2, implicated in muscular and cardiovascular disorders. The present invention also relates to oligonucleotide therapeutic agents (antisense oligonucleotides and/or double stranded oligonucleotides such as dsRNA) and their use in the treatment of muscular and cardiovascular disorders resulting from dysregulation of mir-208-2.

Abstract: A method of manufacturing an organic thin film transistor, the method comprising: depositing a source and drain electrode over a substrate using a solution processing technique; forming a workfunction modifying layer over the source and drain electrodes using a solution processing technique; and depositing an organic semi-conductive material in a channel region between the source and drain electrode using a solution processing technique.

Abstract: The present invention relates to double-stranded RNA compounds with at least one blunt end comprising at least one 3?-end of formula wherein X is O or S R1 and R2 are independently OH, NH2, SH, alkyl, aryl, alkyl-aryl, aryl-alkyl, where alkyl, aryl, alkyl-aryl, aryl-alkyl can be substituted by additional heteroatoms and functional groups, preferably a heteroatom selected from the group of N, O, or S or a functional group selected from the group OH, NH2, SH, carboxylic acid or ester; or R1 and R2 may be of formula Y-Z where Y is O, N, S and Z is H, alkyl, aryl, alkyl-aryl, aryl-alkyl, where alkyl, aryl, alkyl-aryl, aryl-alkyl can be substituted by additional heteroatoms, preferably a heteroatom selected from the group of N, O, or S; and wherein said double-stranded RNA mediates RNA interference.

Abstract: A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric layer disposed between the source and drain electrodes and the gate electrode; and patterning the dielectric layer using the source and drain electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.

Abstract: Methods and apparatuses for determining the depth and concentration of fluorophores in a turbid medium are disclosed. The method advantageously provides for a rapid estimation of the depth of the flurophore using characteristics of a temporal point spread function. The concentration of the flurophore can be determined using the method of the present invention by combining a calculated depth of the flurophore with a measurement of the intensity of the emitted fluorescence. The intensity can be accurately measured by the apparatus disclosed herein which combine back-reflection and trans-illumination geometries for the source of light injecting and detection.

Abstract: A process for manufacturing an electrical device, the process comprising the steps: providing a substrate; bringing a stamp into contact with the substrate whereby areas of the substrate contacted by the stamp have decreased wettability; and depositing a liquid comprising an electrically active material over areas of the substrate located between the areas of decreased wettability.

Abstract: A piston adapted for use in offset mounting conditions includes a piston body having a longitudinally-extending axis. First and second securement features are located at radially outer positions relative to the axis. The first and second securement features are also located on one diametrical side of a midplane of the piston body. A plurality of support walls extends from the diametrically opposite side of the piston body toward the securement features. A gas spring assembly including such a piston is also included.

Abstract: A flow battery electrode assembly with a first impermeable, substantially metal electrode, a second permeable, substantially metal electrode and at least one electrically conductive spacer. The electrically conductive spacer connects the first impermeable, substantially metal electrode and the second permeable, substantially metal electrode such that the first impermeable, substantially metal electrode and the second permeable, substantially metal electrode are spaced apart from each other by an electrolyte flow path.

Abstract: An active matrix organic optical device comprising a plurality of organic thin film transistors and a plurality of pixels disposed on a common substrate, wherein a common bank layer is provided for the organic thin film transistors and the pixels, the common bank layer defining a plurality of wells, wherein some of the wells contain the organic semiconducting material of the organic thin film transistors therein and others of the wells contain organic optically active material of the pixels therein.

Abstract: The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.

Abstract: A method of forming a top gate transistor comprising the steps of providing a substrate carrying source and drain electrodes defining a channel region therebetween; treating at least part of the surface of the channel region to reduce its polarity; and depositing a semiconductor layer in the channel.

Abstract: Methods and apparatuses for determining the depth and concentration of fluorophores in a turbid medium are disclosed. The method advantageously provides for a rapid estimation of the depth of the fluorophore using characteristics of a temporal point spread function. The concentration of the fluorophore can be determined using the method of the present invention by combining a calculated depth of the fluorophore with a measurement of the intensity of the emitted fluorescence. The intensity can be accurately measured by the apparatus disclosed herein which combine back-reflection and trans-illumination geometries for the source of light injecting and detection.

Abstract: Methods and apparatuses for determining the depth and concentration of fluorophores in a turbid medium are disclosed. The method advantageously provides for a rapid estimation of the depth of the flurophore using characteristics of a temporal point spread function. The concentration of the flurophore can be determined using the method of the present invention by combining a calculated depth of the flurophore with a measurement of the intensity of the emitted fluorescence. The intensity can be accurately measured by the apparatus disclosed herein which combine back-reflection and trans-illumination geometries for the source of light injecting and detection.

Abstract: A method of manufacturing an electronic device, the method comprising: providing a substrate; forming a patterned layer of removable material on the substrate; depositing, using an indiscriminate deposition method, a layer of a surface energy modifying material over the substrate comprising the patterned layer of removable material; removing the removable material from the substrate thereby forming a patterned surface of the substrate with surface energy modifying material in those areas not previously covered by the removable material and no surface energy modifying material in those areas previously covered by the removable material; and depositing one or more active components from solution on the patterned surface of the substrate using an indiscriminate deposition technique whereby a patterned layer of the one or more active components is formed based on the pattern of surface energy modifying material on the substrate.

Abstract: An organic thin film transistor, and a method of making the same, comprising a source and drain electrode and organic semi-conductive material disposed therebetween in a channel region, in which the source and drain electrodes have disposed on them a thin self-assembled layer of a material comprising a dopant moiety for chemically doping the organic semi-conductive material by accepting electrons, the dopant moiety having a redox potential of at least 0.3 eV relative to a saturated calomel electrode in acetonitrile.

Abstract: Systems and methods for improving the current pulse from multiple pairs of pulsed alternators used for driving large loads such as an electromagnetic launcher (i.e., “rail gun”) load. Conventional current pulse ripples are reduced by interleaving pulses from multiple pairs of contra-rotating pulsed alternators. Current pulses supplied by different pairs of pulsed alternators are timed so that they are interspersed between one another to provide more pulses for a given launch time. The interleaved current pulses increase the frequency and reduce the magnitude of the ripple on the average load current.

Abstract: The present invention relates to a novel microRNA, mir-208-2, implicated in muscular and cardiovascular disorders. The present invention also relates to oligonucleotide therapeutic agents (antisense oligonucleotides and/or double stranded oligonucleotides such as dsRNA) and their use in the treatment of muscular and cardiovascular disorders resulting from dysregulation of mir-208-2.

Abstract: A method of manufacturing an organic thin film transistor, the method comprising: depositing a source and drain electrode; forming a thin self-assembled layer of material on the source and drain electrodes, the thin self-assembled layer of material comprising a dopant moiety for chemically doping an organic semi-conductive material by accepting or donating charge and a separate attachment moiety bonded to the dopant moiety and selectively bonded to the source and drain electrodes; and depositing a solution comprising a solvent and an organic semi-conductive material in a channel region between the source and drain electrode.