Patents by Inventor Jonathan J. Wierer, Jr.
Jonathan J. Wierer, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10553767Abstract: An LED subpixel can be provided with a reflector layer that controls viewing angles. After formation of an array of nanowires including first conductivity type cores and active layers, a second conductivity type semiconductor material layer, a transparent conductive oxide layer, and a dielectric material layer are sequentially formed. An opening is formed through the dielectric material layer over the array of nanowires. The reflector layer can be formed around the array of nanowires and through the opening in the dielectric material layer on the transparent conductive oxide layer. A conductive bonding structure is formed in electrical contact with the reflector layer.Type: GrantFiled: January 8, 2018Date of Patent: February 4, 2020Assignee: GLO ABInventors: Fariba Danesh, Nathan F. Gardner, Jonathan J. Wierer, Jr.
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Publication number: 20180198047Abstract: An LED subpixel can be provided with a reflector layer that controls viewing angles. After formation of an array of nanowires including first conductivity type cores and active layers, a second conductivity type semiconductor material layer, a transparent conductive oxide layer, and a dielectric material layer are sequentially formed. An opening is formed through the dielectric material layer over the array of nanowires. The reflector layer can be formed around the array of nanowires and through the opening in the dielectric material layer on the transparent conductive oxide layer. A conductive bonding structure is formed in electrical contact with the reflector layer.Type: ApplicationFiled: January 8, 2018Publication date: July 12, 2018Inventors: Fariba DANESH, Nathan F. GARDNER, Jonathan J. WIERER, JR.
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Patent number: 9385265Abstract: A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.Type: GrantFiled: April 12, 2011Date of Patent: July 5, 2016Assignee: LUMILEDS LLCInventors: Jonathan J. Wierer, Jr., John E. Epler
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Patent number: 9368677Abstract: Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.Type: GrantFiled: November 13, 2014Date of Patent: June 14, 2016Assignee: Sandia CorporationInventors: Jonathan J. Wierer, Jr., Andrew A. Allerman
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Patent number: 9276382Abstract: Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.Type: GrantFiled: February 17, 2015Date of Patent: March 1, 2016Assignee: Sandia CorporationInventors: Arthur J. Fischer, Jeffrey Y. Tsao, Jonathan J. Wierer, Jr., Xiaoyin Xiao, George T. Wang
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Publication number: 20150270136Abstract: Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.Type: ApplicationFiled: February 17, 2015Publication date: September 24, 2015Inventors: Arthur J. Fischer, Jeffrey Y. Tsao, Jonathan J. Wierer, JR., Xiaoyin Xiao, George T. Wang
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Patent number: 9142726Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.Type: GrantFiled: July 3, 2012Date of Patent: September 22, 2015Assignee: Philips Lumileds Lighting Company LLCInventors: Aurelien J. F. David, Henry Kwong-Hin Choy, Jonathan J. Wierer, Jr.
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Patent number: 9000450Abstract: A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.Type: GrantFiled: February 24, 2012Date of Patent: April 7, 2015Assignee: Philips Lumileds Lighting Company LLCInventors: Jonathan J. Wierer, Jr., Michael R. Krames, Nathan F. Gardner
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Publication number: 20150079770Abstract: Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.Type: ApplicationFiled: November 13, 2014Publication date: March 19, 2015Inventors: Jonathan J. Wierer, JR., Andrew A. Allerman
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Patent number: 8895335Abstract: A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.Type: GrantFiled: July 26, 2012Date of Patent: November 25, 2014Assignee: Sandia CorporationInventors: Jonathan J. Wierer, Jr., Andrew A. Allerman
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Patent number: 8785905Abstract: A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.Type: GrantFiled: January 17, 2013Date of Patent: July 22, 2014Assignee: Sandia CorporationInventors: George T. Wang, Qiming Li, Jonathan J. Wierer, Jr., Daniel Koleske
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Publication number: 20120267668Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.Type: ApplicationFiled: July 3, 2012Publication date: October 25, 2012Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Aurelien J.F. David, Henry Kwong-Hin Choy, Jonathan J. Wierer, JR.
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Patent number: 8242521Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.Type: GrantFiled: June 16, 2011Date of Patent: August 14, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company LLCInventors: Aurelien J. F. David, Henry Kwong-Hin Choy, Jonathan J. Wierer, Jr.
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Publication number: 20120161187Abstract: A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.Type: ApplicationFiled: February 24, 2012Publication date: June 28, 2012Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Jonathan J. Wierer, JR., Michael R. Krames, Nathan F. Gardner
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Patent number: 8163575Abstract: A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.Type: GrantFiled: June 17, 2005Date of Patent: April 24, 2012Assignee: Philips Lumileds Lighting Company LLCInventors: Jonathan J. Wierer, Jr., Michael R. Krames, Nathan F. Gardner
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Publication number: 20120074448Abstract: A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region and a photonic crystal formed within or on a surface of the semiconductor structure is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor.Type: ApplicationFiled: December 2, 2011Publication date: March 29, 2012Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Jonathan J. Wierer, JR., SERGE BIERHUIZEN, AURELIEN J.F. DAVID, MICHAEL R. KRAMES, RICHARD J. WEISS
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Publication number: 20110241056Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.Type: ApplicationFiled: June 16, 2011Publication date: October 6, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Aurelien J.F. David, Henry Kwong-Hin Choy, Jonathan J. Wierer, JR.
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Publication number: 20110193059Abstract: A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.Type: ApplicationFiled: April 12, 2011Publication date: August 11, 2011Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: JONATHAN J. WIERER, JR., JOHN E. EPLER
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Patent number: 7928448Abstract: A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.Type: GrantFiled: December 4, 2007Date of Patent: April 19, 2011Inventors: Jonathan J. Wierer, Jr., John E. Epler
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Patent number: 7808011Abstract: A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.Type: GrantFiled: March 19, 2004Date of Patent: October 5, 2010Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lights Co., LLCInventors: James C. Kim, John E. Epler, Nathan F. Gardner, Michael R. Krames, Jonathan J. Wierer, Jr.