Patents by Inventor Jonathan L. Klein

Jonathan L. Klein has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8453312
    Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: June 4, 2013
    Assignee: Honeywell International Inc.
    Inventors: Ijaz H. Jafri, Jonathan L. Klein, Galen P. Magendanz
  • Patent number: 7836574
    Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: November 23, 2010
    Assignee: Honeywell International Inc.
    Inventors: Ijaz H. Jafri, Jonathan L. Klein, Galen P. Magendanz
  • Patent number: 7516661
    Abstract: A microelectromechanical system (MEMS) device with a mechanism layer having a first part and a second part, and at least one cover for sealing the mechanism layer. The inner surface of at least one of the covers is structured such that a protruding structure is present on the inner surface of the cover and wherein the protruding structure mechanically causes the first part to be deflected out of a plane associated with the second part.
    Type: Grant
    Filed: February 23, 2006
    Date of Patent: April 14, 2009
    Assignee: Honeywell International Inc.
    Inventors: Jonathan L. Klein, Galen P. Magendanz, Peter H. LaFond, Mark L. Williams, Michael J. Foster
  • Publication number: 20090007413
    Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.
    Type: Application
    Filed: June 30, 2008
    Publication date: January 8, 2009
    Applicant: Honeywell International Inc.
    Inventors: Ijaz H. Jafri, Jonathan L. Klein, Galen P. Magendanz
  • Publication number: 20080261372
    Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.
    Type: Application
    Filed: June 30, 2008
    Publication date: October 23, 2008
    Applicant: Honeywell International Inc.
    Inventors: Ijaz H. Jafri, Jonathan L. Klein, Galen P. Magendanz
  • Patent number: 7406761
    Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.
    Type: Grant
    Filed: March 21, 2005
    Date of Patent: August 5, 2008
    Assignee: Honeywell International Inc.
    Inventors: Ijaz H. Jafri, Jonathan L. Klein, Galen P. Magendanz
  • Publication number: 20080032501
    Abstract: Micro-electromechanical systems (MEMS) pre-fabrication products and methods for forming MEMS devices using silicon-on-metal (SOM) wafers. An embodiment of a method may include the steps of bonding a patterned SOM wafer to a cover wafer, thinning the handle layer of the SOM wafer, selectively removing the exposed metal layer, and either continuing with final metallization or cover bonding to the back of the active layer.
    Type: Application
    Filed: July 21, 2006
    Publication date: February 7, 2008
    Applicant: Honeywell International Inc.
    Inventors: Jonathan L. Klein, Jorg Pilchowski
  • Patent number: 5908719
    Abstract: The present invention provides a procedure for achieving accurate alignment between an X-ray mask and a device substrate for the fabrication of multi-layer microstructures. A first photoresist layer on the substrate is patterned by a first X-ray mask to include first alignment holes along with a first layer microstructure pattern. Mask photoresist layers are attached to second and subsequent masks that are used to pattern additional photoresist layers attached to the microstructure device substrate. The mask photoresist layers are patterned to include mask alignment holes that correspond in geometry to the first alignment holes in the first photoresist layer on the device substrate. Alignment between a second mask and the first photoresist layer is achieved by assembly of the second mask onto the first photoresist layer using alignment posts placed in the first alignment holes in the first photoresist layer that penetrate into the mask alignment holes in the mask photoresist layers.
    Type: Grant
    Filed: September 11, 1998
    Date of Patent: June 1, 1999
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Henry Guckel, Harald Emmerich, Jonathan L. Klein
  • Patent number: 5866281
    Abstract: The present invention provides a procedure for achieving accurate alignment between an X-ray mask and a device substrate for the fabrication of multi-layer microstructures. A first photoresist layer on the substrate is patterned by a first X-ray mask to include first alignment holes along with a first layer microstructure pattern. Mask photoresist layers are attached to second and subsequent masks that are used to pattern additional photoresist layers attached to the microstructure device substrate. The mask photoresist layers are patterned to include mask alignment holes that correspond in geometry to the first alignment holes in the first photoresist layer on the device substrate. Alignment between a second mask and the first photoresist layer is achieved by assembly of the second mask onto the first photoresist layer using alignment posts placed in the first alignment holes in the first photoresist layer that penetrate into the mask alignment holes in the mask photoresist layers.
    Type: Grant
    Filed: November 27, 1996
    Date of Patent: February 2, 1999
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Henry Guckel, Harald Emmerich, Jonathan L. Klein
  • Patent number: 5679502
    Abstract: An X-ray source such as a synchrotron which provides a significant spectral content of hard X-rays is used to expose relatively thick photoresist such that the portions of the photoresist at an exit surface receive at least a threshold dose sufficient to render the photoresist susceptible to a developer, while the entrance surface of the photoresist receives an exposure which does not exceed a power limit at which destructive disruption of the photoresist would occur. The X-ray beam is spectrally shaped to substantially eliminate lower energy photons while allowing a substantial flux of higher energy photons to pass through to the photoresist target. Filters and the substrate of the X-ray mask may be used to spectrally shape the X-ray beam. Machining of photoresists such as polymethylmethacrylate to micron tolerances may be obtained to depths of several centimeters, and multiple targets may be exposed simultaneously.
    Type: Grant
    Filed: March 15, 1995
    Date of Patent: October 21, 1997
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: David Peter Siddons, Erik D. Johnson, Henry Guckel, Jonathan L. Klein
  • Patent number: 5644177
    Abstract: Micromechanical structures capable of actuation for purposes such as fluid flow control are formed on substrates in sizes in the range of one or two millimeters or less using micromechanical processing techniques. A magnetic core having a gap therein is fixed on the substrate, and a plunger is mounted by a spring for movement parallel to the substrate in response to the flux provided to the gap of the fixed core. An electrical coil wound around a mandrel is engaged to the fixed magnetic core such that flux is induced in the core when current is supplied to the coil, driving the plunger against the force of the spring. A micromechanical fluid control unit includes a metal frame structure formed by electrodeposition on a substrate with the inner wall of the frame having slots formed therein to admit a separator wall which divides the interior of the frame into separate chambers, with a cover secured over the top of the frame and the separator wall to seal the chambers.
    Type: Grant
    Filed: February 23, 1995
    Date of Patent: July 1, 1997
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Henry Guckel, Jonathan L. Klein, Thomas L. Earles