Abstract: An optoelectronic device includes a backlight panel illuminating a display panel. The backlight panel includes an array of light emitting pixels, each light emitting pixel having at least one subpixel with one or more light emitting diodes positioned on a substrate. The pixel further includes at least one photodetector positioned on the substrate and arranged to detect an amount of reflected light emitted by said subpixel and reflected by the display panel.

Abstract: An optoelectronic device includes a backlight panel illuminating a display panel. The backlight panel includes an array of light emitting pixels, with each light emitting pixel including at least one subpixel formed by one or more light emitting diodes positioned on a substrate. At least one photodetector is positioned on the substrate and arranged to detect an amount of reflected light emitted by said subpixel and reflected by the display panel.

Abstract: This disclosure relates to a time-of-flight sensor including, on a same base substrate, a light emitter configured to emit light into an image scene, a reference sensor configured to detect light emitted by the light emitter, and a signal reception sensor array separated from the light emitter by an optical barrier. The optical barrier is configured to prevent light emitted by the light emitter from directly reaching the signal reception sensor array, with the signal reception sensor array being configured to detect light reflected by the image scene. The reference sensor and the signal reception sensor array are based on semiconductor nanoparticles.

Abstract: An imaging device includes an array of photosensors. A film of semiconductor nanoparticles is common to the photosensors of the array. The nanoparticles are configured to be excited by light with wavelengths in a range from 280 to 1500 nanometers. Each photosensor includes a top electrode and a bottom electrode positioned on opposite sides of the film of semiconductor nanoparticles. At least some of the photosensors further include a filter configured to transmit light with wavelengths in a range from 280 to 400 nanometers, and to at least partially filter out light with wavelengths greater than 400 nanometers from reaching the photosensor. A transistor level is electrically coupled to the top and bottom electrodes of the photosensors.

Abstract: An imaging device includes a first layer made of quantum dots and a second layer including at least two filter regions extending over the first layer. The at least two filter regions are configured to transmit distinct wavelengths. The quantum dots of the first layer are configured to generate charges upon reception of light in the distinct wavelengths.

Abstract: A pixel includes a sensing element and red, green and blue first light emitters. The number of light emitters of each green, red and blue color is equal in each pixel. The pixel may further include a second light emitter which emits light that is different from blue light, green light or red light.

Abstract: An optoelectronic device includes a substrate with a light emitter and a photodetector supported by the substrate. The light emitter and photodetector are stacked one on top of the other. At least one of the light emitter and photodetector is formed by a stack including the following order of layers: a first electrode layer, a hole transport layer, a quantum nano-structure layer (for example, a semiconductor nanoparticle layer, a quantum dot layer, a quantum rod layer or quantum well layer), an electron transport layer and a second electrode layer. An insulating layer is positioned between the light emitter and photodetector in the stack.

Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Abstract: A white light emitting semiconductor nanocrystal includes a plurality of semiconductor nanocrystals.

Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Abstract: A white light emitting semiconductor nanocrystal includes a plurality of semiconductor nanocrystals.

Abstract: A light emitting device includes a semiconductor nanocrystal in a layer. The layer can be a monolayer of semiconductor nanocrystals. The monolayer can form a pattern on a substrate.

Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Abstract: A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.