Abstract: Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station.

Abstract: Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station.

Abstract: A particle monitor in the process chamber of a semiconductor device manufacturing apparatus provides a measure of a flux of contaminant particles in the chamber. The flux is measured whilst process conditions are produced in the process chamber and a process parameter is adjusted in response to the measured flux in order to reduce this flux during the process. In an ion implanter, the particle sensor measures the flux of particles entrained with the ion beam at a location in front of the wafer being processed.

Abstract: A kinematic electrode mount is provided for an ion implanter in which an electrode insert member having an electrode body portion which defines an aperture, is inserted into an electrode support frame. In one embodiment, a first kinematic alignment pin of the insert member engages a first, groove-shaped kinematic alignment surface of the electrode support frame to align the first alignment pin in two orthogonal directions relative to the electrode support frame. In addition, a second kinematic alignment pin of the insert member engages a second kinematic alignment surface of the electrode support frame to align the insert member in a rotational orientation relative to the electrode support frame. A plurality of flanges of the insert member engage the electrode support frame to retain the insert member in the aligned position and to electrically couple the electrode insert member to the electrode support frame.