Abstract: A memory device includes first transistor over a semiconductor substrate, wherein the first transistor includes a first word line extending over the semiconductor substrate; a second transistor over the semiconductor substrate, wherein the second transistor includes a second word line extending over the first word line; a first air gap extending between the first word line and the second word line; a memory film extending along and contacting the first word line and the second word line; a channel layer extending along the memory film; a source line extending along the channel layer, wherein the memory film is between the source line and the word line; a bit line extending along the channel layer, wherein the memory film is between the bit line and the word line; and an isolation region between the source line and the bit line.

Abstract: Provided is a target apparatus of high durability so that a thin film is not deformed or damaged under an environment of high temperature and high pressure generated during a nuclear reaction between proton and H218O concentrate, and a productivity of 18F can be increased. The target apparatus includes a cavity member having a cavity, in which H218O concentrate is received, for producing 18F using a nuclear reaction between proton irradiated onto the H218O concentrate in the cavity and the H218O concentrate.