Abstract: According to at least one example embodiment, a substrate treating apparatus includes a substrate support structure including a spin head, the substrate support structure configured to support a substrate, and rotate the substrate, at least one treating liquid recovery container configured to recover at least one substrate treating liquid, and a discharging device including a first nozzle and a second nozzle, the first nozzle configured to discharge a chemical onto the substrate, and the second nozzle configured to discharge deionized water onto the substrate, wherein the first nozzle includes a surface pattern configured to provide roughness on an inner surface of the first nozzle.

Abstract: A substitution gold plating solution for performing uniform gold plating directly on copper wiring of a printed circuit board is provided and a gold plating method using the same is provided, the solution comprising a purine-based compound or a pyrimidine-based compound having a carbonyl oxygen used as a localized corrosion inhibitor, a water-soluble gold compound, an aminocarboxylic acid as a complexing agent, a dicarboxylic acid as a conductivity improving agent, an ?-hydroxycarboxylic acid and heteroaryl carboxylic acid as a base metal elution and reprecipitation preventing agent, a sulfite compound as a gold ion stabilizer, an axole compound as a surface corrosion inhibitor, other surfactants, crystal regulators, pH adjuster, and buffers. The substitution-type electroless gold plating solution according to the present invention prevents the localized corrosion of the copper surface, which is the base metal, and thus the gold plating film produced is excellent in solder mounting reliability.

Abstract: A substitution gold plating solution for performing uniform gold plating directly on copper wiring of a printed circuit board is provided and a gold plating method using the same is provided, the solution comprising a purine-based compound or a pyrimidine-based compound having a carbonyl oxygen used as a localized corrosion inhibitor, a water-soluble gold compound, an aminocarboxylic acid as a complexing agent, a dicarboxylic acid as a conductivity improving agent, an ?-hydroxycarboxylic acid and heteroaryl carboxylic acid as a base metal elution and re-precipitation preventing agent, a sulfite compound as a gold ion stabilizer, an axole compound as a surface corrosion inhibitor, other surfactants, crystal regulators, pH adjuster, and buffers. The substitution-type electroless gold plating solution according to the present invention prevents the localized corrosion of the copper surface, which is the base metal, and thus the gold plating film produced is excellent in solder mounting reliability.

Abstract: The present invention relates to the all-optical logic AND operation in a SOA (semiconductor optical amplifier)-based Mach-Zehnder interferometer. More particularly, it relates to the technology making feasible ultra high-speed logic operations while maintaining a small size and a low input power by utilizing a cross-phase modulation (XPM) wavelength converter composed of semiconductor optical amplifiers in the form of a Mach-Zehnder interferometer with nonlinear characteristics.

Abstract: In order to have a wanted exposure pattern, a specific intensity of light should be irradiated for a certain time interval since the exposing degree of the photoresist depends on the intensity of the incident light. The intensity of the light emitted from a light source such as a conventional laser has the Gaussian distribution in space, and the Gaussian distribution is maintained after passing a conventional lens. And the uniform area is limited to a very narrow area since the exposure pattern is changed with the intensity distribution of the light incident to the photoresist.

Abstract: An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the steps of introducing argon (Ar) and oxygen (O2) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber, preheating a substrate, depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon(C) or nitrogen (N) atoms from an atomic radical source installed over the substrate, and slowly cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.

Abstract: An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the steps of introducing argon (Ar) and oxygen (O2) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber, preheating a substrate, depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon(C) or nitrogen (N) atoms from an atomic radical source installed over the substrate, and slowly cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.