Abstract: There is provided a semiconductor package comprising: a multilayer thin film structure including a plurality of dielectric layers and at least one or more redistribution layers; a semiconductor chip positioned at one side of the multilayer thin film structure and electrically connected to the redistribution layer; and a solder bump formed at the other side of the multilayer thin film structure. The multilayer thin film structure functions as the substrate for the semiconductor package and realizes the light, thin, short and small BGA package without any additional substrate. A plurality of the packages can be simultaneously formed at wafer level or carrier level, to simplify the process and to be favorable for mass production.

Abstract: A thin film deposition apparatus that is suitable for production of large-sized substrates with fine patterns includes: an electrostatic chuck including a body that contacts a substrate that constitutes a deposition target and including a supporting surface supporting the substrate, an electrode installed in the body to generate an electrostatic force on the supporting surface, and a battery that is electrically connected to the electrode in the body; a plurality of chambers that are maintained in vacuum states; at least one thin film deposition assembly disposed in one of the plurality of chambers, separated by a predetermined distance from the substrate, and forming a thin film on the substrate supported by the electrostatic chuck; and a carrier moving the electrostatic chuck through the chambers.

Abstract: A thin film deposition apparatus that can be applied to manufacture large-sized display devices on a mass scale and that improves manufacturing yield, and a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus.

Abstract: A thin film deposition apparatus and a method of manufacturing an organic light-emitting display device by using the same, and more particularly, to a thin film deposition apparatus that can remove a deposition material deposited on a patterning slit sheet without performing an additional cleaning process, and a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus.

Abstract: A thin film deposition apparatus used to manufacture large substrates on a mass scale and that allows high-definition patterning, and a method of manufacturing an organic light-emitting display apparatus using the same, the apparatus includes a loading unit fixing a substrate onto an electrostatic chuck; a deposition unit including a chamber maintained in a vacuum state and a thin film deposition assembly disposed in the chamber, separated from the substrate by a predetermined distance, to deposit a thin film on the substrate fixed on the electrostatic chuck; an unloading unit separating the substrate on which a deposition process is completed, from the electrostatic chuck; a first circulation unit sequentially moving the electrostatic chuck on which the substrate is fixed, to the loading unit, the deposition unit, and the unloading unit; and a second circulation unit returning the electrostatic chuck separated from the substrate to the loading unit from the unloading unit, wherein the first circulation unit

Abstract: A thin film deposition apparatus that includes a thin film deposition assembly incorporating: a deposition source that discharges a deposition material; a deposition source nozzle unit that is disposed at a side of the deposition source and includes a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet that is disposed opposite to the deposition source nozzle unit and includes a plurality of patterning slits arranged in the first direction; and a barrier plate assembly including a plurality of barrier plates that are disposed between the deposition source nozzle unit and the patterning slit sheet in the first direction, and partition a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces, wherein each of the barrier plates is separate from the patterning slit sheet.

Abstract: A thin film deposition apparatus and a method of manufacturing an organic light-emitting display device using the thin film deposition apparatus. The thin film deposition apparatus includes a plurality of thin film deposition assemblies, each of which includes: a deposition source that discharges a deposition material; a deposition source nozzle unit that is disposed at a side of the deposition source and includes a plurality of deposition source nozzles; a patterning slit sheet that is disposed opposite to the deposition source nozzle unit and includes a plurality of patterning slits arranged in a first direction; and a barrier plate assembly that is disposed between the deposition source nozzle unit and the patterning slit sheet, in the first direction. The barrier plate assembly includes a plurality of barrier plates that partition a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces.

Abstract: A substrate cutting apparatus including: a stage to support a substrate; a laser generator to emit a laser beam; a beam oscillator to oscillate the laser beam onto a cutting line of the substrate, to heat the substrate; and a cooling unit to cool the heated substrate.

Abstract: The present invention relates to a method of regulating mammalian target-of-rapamycin (mTOR) by regulating a phospholipase D (PLD) activity that generates a complex with mTOR. Further, the present invention also relates to a method of screening inhibitors of mTOR, and a method and a composition for treating mTOR-related metabolic diseases by inhibiting mTOR.

Abstract: A power amplifier using N-way Doherty structure for extending the efficiency region over the high peak-to-average power ratio of the multiplexing modulated signals such as wideband code division multiple access and orthogonal frequency division multiplexing is disclosed. In an embodiment, the present invention uses a dual-feed distributed structure to an N-way Doherty amplifier to improve the isolation between at least one main amplifier and at least one peaking amplifier and, and also to improve both gain and efficiency performance at high output back-off power. Hybrid couplers can be used at either or both of the input and output. In at least some implementations, circuit space is also conserved due to the integration of amplification, power splitting and combining.

Abstract: A cathode ray tube includes a tube having a panel having an inner phosphor screen, a funnel connected to the panel, a neck connected to the funnel, a deflection unit disposed around the funnel, an electron gun installed in the neck, and a scatter-proof unit installed on the panel and the funnel such that the panel shares the scatter-proof unit with the funnel for preventing the tube from breaking and scattering into many pieces.

Abstract: An efficient peak cancellation method for reducing the peak-to-average power ratio in wideband communication systems uses repeated clipping and frequency domain filtering to achieve a desired peak-to-average power ratio for wideband code division multiple access and orthogonal frequency division multiplexing signals. The maximum magnitude of the filtered pulse is determined by a scaling factor which permits eliminating several iterations while still achieving convergence to the targeted peak-to-average power ratio, thereby reducing computational load and saving hardware resources. This results in improved performance in terms of error vector magnitude, adjacent channel leakage ratio and peak-to-average power ratio.

Abstract: Disclosed is an apparatus for coherent combining type demodulation and method thereof, in which a multi-path reception signal is demodulated by a coherent combining method in case that a transmitted signal, which was spread and modulated by such an orthogonal code as Walsh code, is received via multi-paths in the course of transmission and by which loss is more reduced than that of modulation of a non-coherent combining method. The modulation according to the coherent combining method needs a pilot signal. Yet, there exists no pilot signal on a reverse link of IS-95A. Hence, the present invention basically generates a phase reference signal or a decision directed pilot signal instead of the pilot signal to perform coherent combining using the phase reference signal or the decision directed phase signal.

Abstract: A method of exchanging channel quality information between a base station and a user equipment in a mobile communication system is disclosed. A method of transmitting channel quality information in a mobile communication system which transmits channel quality information from a user equipment to a base station comprises transmitting channel quality information, which is measured based on a signal received from the base station, to the base station, receiving feedback information of the channel quality information from the base station, and transmitting difference information to the base station, the difference information for matching the channel quality information transmitted from the user equipment with channel quality information received by the base station based on the feedback information.

Abstract: A shadow mask for a cathode ray tube is formed with a curved surface such that a radius of curvature corresponding to a perpendicular axis which passes through the center of the shadow mask decreases monotonely along the perpendicular axis from the center of the shadow mask and a radius of curvature corresponding to a parallel axis which passes through the center of the shadow mask decreases monotonely along the parallel axis from the center of the shadow mask. The curved surface satisfies the following condition, [0.1RVmin+0.9RVmax, 0.9RVmin+0.1RVmax]?[RHmin, RHmax]. RVmin and RVmax respectively represent the minimum and the maximum value of the minimum radius of curvature corresponding to the perpendicular axis, and RHmin and RHmax respectively represent the minimum and the maximum value of the minimum radius of curvature corresponding to the parallel axis.

Abstract: A package for semiconductor image pickup device is provided. The package is fabricated by using flip chip bumping. During deposition process of forming a metallic bonding layer and a metal layer for plating, a surface of a semiconductor image pickup device is maintained at the range between room temperature and 200° C. in accordance with a first embodiment. A polymer layer for preventing stress from generating can absorb stress generated during the deposition process in accordance with a second embodiment. According to the present invention, a functional polymer layer on the surface of a semiconductor image pickup device can be prevent from being deteriorated in its properties and from transforming at its surface.

Abstract: A mask assembly for a Cathode Ray Tube (CRT) includes a shadow mask with a plurality of beam passage holes, and a frame including a supporting portion with a pair of long sides and a pair of short sides which fix the shadow mask and a strength maintenance portion bent from the supporting portion. The frame includes a plurality of reinforcement indentations formed on a portion of the boundary between the supporting portion and the strength maintenance portion. At least one of the reinforcement indentations satisfies the following condition: S 1 3 ? S 2 ? 2 3 ? S 1 wherein S1 represents an area of a triangle defined by a width of the supporting portion including the reinforcement indentation, a width of the strength maintenance portion including the reinforcement indentation and an imaginary line connecting an end of the supporting portion and an end of the strength maintenance portion, and wherein S2 represents a sectional area of the reinforcement indentation.

Abstract: The present invention discloses to an SMA connector, a preferable embodiment of which comprises a body acting as ground, a central conductor existing in the inner part of the ground, an insulator with a predetermined dielectric constant existing between the body and the central conductor, a first step transition part formed in the body, a taper formed in the central conductor in order to improve RF characteristics and to fix the central conductor and the insulator, and a second step transition part formed in the central conductor corresponding to the first step transition part to improve RF characteristics.

Abstract: A power amplifier using N-way Doherty structure for extending the efficiency region over the high peak-to-average power ratio of the multiplexing modulated signals such as wideband code division multiple access and orthogonal frequency division multiplexing is disclosed. In an embodiment, the present invention uses a dual-feed distributed structure to an N-way Doherty amplifier to improve the isolation between at least one main amplifier and at least one peaking amplifier and, and also to improve both gain and efficiency performance at high output back-off power. Hybrid couplers can be used at either or both of the input and output. In at least some implementations, circuit space is also conserved due to the integration of amplification, power splitting and combining.

Abstract: A RF-digital hybrid mode power amplifier system for achieving high efficiency and high linearity in wideband communication systems is disclosed. The present invention is based on the method of adaptive digital predistortion to linearize a power amplifier in the RF domain. The power amplifier characteristics such as variation of linearity and asymmetric distortion of the amplifier output signal are monitored by the narrowband feedback path and controlled by the adaptation algorithm in a digital module. Therefore, the present invention could compensate the nonlinearities as well as memory effects of the power amplifier systems and also improve performances, in terms of power added efficiency, adjacent channel leakage ratio and peak-to-average power ratio. The present disclosure enables a power amplifier system to be field reconfigurable and support multi-modulation schemes (modulation agnostic), multi-carriers and multi-channels.