Abstract: The present disclosure relates to a generalized method for producing a vertically oriented block copolymer film, a block copolymer film with controlled orientation obtained thereby, and a method for producing a self-assembled pattern. According to the present disclosure, it is possible to form a crosslinked layer, which is mechanically stable and undergoes no chemical change, by subjecting the block copolymer surface to plasma treatment using a filter. It is also possible to obtain a vertically oriented block copolymer film by annealing the block copolymer film having such a crosslinked layer. The method for producing a vertically oriented block copolymer film according to the present disclosure is advantageous in that it can be applied for general purpose regardless of the chemical structure, type and morphology of a block copolymer, and the method can be applied generally to the conventional directed self assembly process.

Abstract: A semiconductor device that includes a plurality of word lines disposed on a substrate in which p-type and n-type active regions are defined, and extends in a first direction. A plurality of bit lines is disposed on the plurality of word lines and extends in a second direction, perpendicular to the first direction. A plurality of memory cells is disposed between the plurality of word lines and the plurality of bit lines and each includes a data storage pattern. The plurality of memory cells includes a plurality of dummy memory cells and a plurality of main memory cells. An upper surface of the data storage pattern of the main memory cells is higher than an upper surface of the data storage pattern of the dummy memory cells.

Abstract: A method of manufacturing a semiconductor device includes forming a first pattern structure having a first opening and a second pattern structure having a second opening on a substrate, forming a gap fill layer in the second opening, forming fences and contact structures in the first opening, removing the gap fill layer in the second opening, forming an upper conductive layer to cover the first and second pattern structures, the fences, and the contact structures, forming a mask pattern based on a photolithography process using the second pattern structure covered by the upper conductive layer as an align mark, and etching the upper conductive layer using the mask pattern to form upper conductive patterns. A width of the second opening is larger than a width of a first opening. A thickness of the upper conductive layer is smaller than a depth of the second opening.

Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.

Abstract: A highly dielectric elastic structure contains a highly dielectric elastic body containing a polymer matrix and a dielectric material dispersed in the polymer matrix; and a stretchable adhesive electrode disposed on the highly dielectric elastic body, wherein the stretchable adhesive electrode contains a polymer adhesive containing a curable polymer and a curing agent; and a conductive filler containing a metal and a carbonaceous material dispersed in the polymer adhesive. The highly dielectric elastic structure of the present disclosure provides the effects of increasing dielectric constant through composition of a polymer dielectric and a dielectric material, improving dielectric properties by forming a stretchable conductive adhesive on the composite material as an electrode and exhibiting stable dielectric properties by improving mechanical stability.

Abstract: A conductive polymer composite for adhesion to a flexible substrate contains a polymer adhesive containing a curable polymer and a curing agent; and a conductive filler containing a metal and a carbonaceous material dispersed in the polymer adhesive. The conductive polymer composite is suitable for application to not only the human body but also other objects having irregular surface. In addition, due to enhanced adhesive strength of the conductive polymer composite to the flexible substrate, the reduction in conductivity or conductivity breakdown caused by external stress can be prevented and flexibility and stretchability can be improved.

Abstract: Provided is an apparatus for stably removing plugging even in a state in which combustible gas or liquid remains in a pipe and precisely removing plugging even using small force.

Abstract: A resistance-switchable material containing: an insulating support; and a complementary resistance switchable filler dispersed in the insulating support, wherein the complementary resistance switchable filler has a spherical core-shell structure containing: a spherical conductive core containing a conductive material; and an insulating shell formed on the surface of the core and containing an insulating material. The resistance-switchable material is capable of exhibiting complementary resistive switching characteristics with improved reliability and stability as symmetrical uniform filament current paths are formed in respective resistive layers adjacent to two electrodes with the conductive core of the complementary resistance-switchable filler at the center due to the electric field control effect by the spherical complementary resistance-switchable filler.

Abstract: Provided is a drill device for removing plugging in pipes, the drill device comprising: a drill bit for breaking plugging in pipes; a vertical control handle capable of controlling a vertical movement of the drill bit; a drill handle capable of controlling a rotational movement of the drill bit; a screw disposed coaxially with the drill bit; a drill shaft having a first portion surrounding the screw and a second portion to which the drill bit is fixed; and a guide shaft surrounding the first portion of the drill shaft, wherein: the vertical control handle and the drill handle are disposed on an extension line of the axis of the screw; the screw is vertically moved by rotations of the vertical control handle, and in conjunction therewith, the drill bit can be vertically moved; and the guide shaft is rotated by rotations of the drill handle, and in conjunction therewith, the drill bit can be rotated.

Abstract: A wavy metal nanowire network thin film, a stretchable transparent electrode including the metal nanowire network thin film, and a method for forming the metal nanowire network thin film. More specifically, it relates to a wavy nanowire network structure based on straight metal nanowires, a method for producing the nanowire network structure, and a flexible electrode including the wavy metal nanowire structure. The flexible electrode of the present invention is transparent and stretchable and exhibits stable performance even when subjected to various deformations.

Abstract: A selective catalytic reduction (SCR) system having a catalytic layer. The SCR includes a plurality of baffle members located in a position spaced apart from a front end of the catalytic layer, the plurality of baffle members reduces a flow deviation due to enlargement of a flow cross-section of a fluid in at least one direction, each of the plurality of baffle members includes a first part and a second part, the first part and the second part of each of the plurality of baffle members extends in an orthogonal direction with respect to the at least one direction of enlargement of the flow cross-section, the first part and the second part are integrated, and each of the plurality of baffle members protrudes in an inlet direction of the fluid.

Abstract: A method of forming a semiconductor device, includes: forming a design pattern on a substrate, wherein the design pattern protrudes from the substrate; forming a filling layer on the substrate, wherein the filling layer at least partially covers the design pattern; forming a polishing resistance pattern adjacent to the design pattern in the filling layer using a laser irradiation process and/or an ion implantation process; and removing the filling layer using a chemical mechanical polishing (CMP) process to expose the design pattern.

Abstract: An electrochemical method for ammonia synthesis including the steps of: preparing a single-crystalline metal thin film; and synthesizing ammonia by using the single-crystalline metal thin film electrode. More particularly, it relates to improvement of the production yield and synthesis rate of ammonia trough the method for preparing ammonia by using an electrochemical reactor which includes a cathode including a single-crystalline metal thin film on the surface thereof, an anode and an electrolyte, wherein the method includes the steps of: supplying nitrogen to the cathode; supplying aqueous electrolyte solution to the anode; and applying an electric voltage between the cathode and the anode.

Abstract: A polyamide/hybrid carbon filler composite is disclosed. The composite includes a polyamide as a matrix and a hybrid carbon filler dispersed in and bonded to the polyamide matrix. The hybrid carbon filler is composed of a nano carbon and a carbon fiber. Also disclosed is a method for preparing the polyamide/hybrid carbon filler. The method includes simultaneously subjecting a mixture of a polyamide and a hybrid carbon filler to mechanofusion and plasma treatments.

Abstract: An electrochemical method for ammonia synthesis including the steps of: preparing a single-crystalline metal thin film; and synthesizing ammonia by using the single-crystalline metal thin film electrode. More particularly, it relates to improvement of the production yield and synthesis rate of ammonia trough the method for preparing ammonia by using an electrochemical reactor which includes a cathode including a single-crystalline metal thin film on the surface thereof, an anode and an electrolyte, wherein the method includes the steps of: supplying nitrogen to the cathode; supplying aqueous electrolyte solution to the anode; and applying an electric voltage between the cathode and the anode.

Abstract: A polyamide/hybrid carbon filler composite is disclosed. The composite includes a polyamide as a matrix and a hybrid carbon filler dispersed in and bonded to the polyamide matrix. The hybrid carbon filler is composed of a nano carbon and a carbon fiber. Also disclosed is a method for preparing the polyamide/hybrid carbon filler. The method includes simultaneously subjecting a mixture of a polyamide and a hybrid carbon filler to mechanofusion and plasma treatments.

Abstract: A resistance-switchable material containing: an insulating support; and a complementary resistance switchable filler dispersed in the insulating support, wherein the complementary resistance switchable filler has a spherical core-shell structure containing: a spherical conductive core containing a conductive material; and an insulating shell formed on the surface of the core and containing an insulating material.

Abstract: A wavy metal nanowire network thin film, a stretchable transparent electrode including the metal nanowire network thin film, and a method for forming the metal nanowire network thin film. More specifically, it relates to a wavy nanowire network structure based on straight metal nanowires, a method for producing the nanowire network structure, and a flexible electrode including the wavy metal nanowire structure. The flexible electrode of the present invention is transparent and stretchable and exhibits stable performance even when subjected to various deformations.

Abstract: A resistance-switchable material containing: an insulating support; and a complementary resistance switchable filler dispersed in the insulating support, wherein the complementary resistance switchable filler has a core-shell structure containing: a wire-type conductive core containing a conductive material; and an insulating shell formed on the surface of the core and containing an insulating material. Because a first resistive layer, a conductive layer and a second resistive layer are formed as one layer and bipolar conductive filaments are formed on the substantially different resistive layers, the memory can exhibit complementary resistive switching characteristics. In addition, the complementary resistance switchable memory of the present disclosure can be prepared through a simplified process at low cost by introducing a simple process of coating a paste in which a complementary resistance switchable filler and a supporting material are mixed.

Abstract: Provided are a chemical mechanical polishing (CMP) slurry composition and a method of fabricating a semiconductor device using the same. The chemical mechanical polishing (CMP) slurry composition includes abrasive particles, a first cationic compound which comprises at least any one of an amino acid, a polyalkylene glycol, a polymer polysaccharide to which a glucosamine compound is bonded, and a polymer containing an amine group, a second cationic compound which comprises an organic acid, and a nonionic compound which comprises polyetheramine.