Patents by Inventor Jong-Ryul Yoo

Jong-Ryul Yoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective epitaxial growth method in semiconductor device
    Patent number: 6391749
    Abstract: A method of selective epitaxial growth performed by sequentially and repeatedly introducing a source gas, an etching gas, and a reducing gas in the reaction chamber, wherein controlled epitaxial layer doping may be obtained by introducing a dopant source gas during introducing any one of the source gas, an etching gas, and a reducing gas, and thereby producing a smooth and uniform epitaxial layer on a predetermined region of a semiconductor substrate.
    Type: Grant
    Filed: June 15, 2001
    Date of Patent: May 21, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Woo Park, Jong-Ryul Yoo, Jung-Min Ha, Si-Young Choi
  • SELECTIVE EPITAXIAL GROWTH METHOD IN SEMICONDUCTOR DEVICE
    Publication number: 20020022347
    Abstract: A method of selective epitaxial growth performed by sequentially and repeatedly introducing a source gas, an etching gas, and a reducing gas in the reaction chamber, wherein controlled epitaxial layer doping may be obtained by introducing a dopant source gas during introducing any one of the source gas, an etching gas, and a reducing gas, and thereby producing a smooth and uniform epitaxial layer on a predetermined region of a semiconductor substrate.
    Type: Application
    Filed: June 15, 2001
    Publication date: February 21, 2002
    Inventors: Jung-Woo Park, Jong-Ryul Yoo, Jung-Min Ha, Si-Young Choi